Transistors SMD Type PNP Transistors 2SA1461 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● High gain bandwidth product 1 ● Complementary to 2SC3734 0.55 ● High speed switching +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Unit V Collector Current - Continuous IC -200 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -30 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 V Collector-emitter saturation voltage * VCE(sat) IC=-50 mA, IB=-5mA -0.1 -0.4 Base - emitter saturation voltage VBE(sat) IC=-50 mA, IB=-5mA -0.8 -0.95 hFE(1) VCE= -1V, IC= -10mA 75 180 300 hFE(2) VCE=- 10 V, IC= -100mA 25 100 * DC current gain * ton Storage time tstg Turn -off time toff Collector output capacitance Cob fT uA V 70 Turn-on time Transition frequency Unit VCC=-3V,IC=-10mA,IB1=-IB2=-1 mA 110 225 ns 300 VCB= -5V, IE= 0,f=1MHz VCE= -20V, IE = 10mA 2.5 200 510 4.5 pF MHz * : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SA1461-Y22 2SA1461-Y23 2SA1461-Y24 Range 75-150 100-200 150-300 Marking Y22 Y23 Y24 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1461 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SA1461 ■ Typical Characterisitics www.kexin.com.cn 3