Transistors SMD Type PNP Transistors 2SA1464 SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Complementary to 2SC3739 1 0.55 ● High fT : fT =400MHz +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage Unit V VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 200 mW Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Typ Max V Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage * VCE(sat) IC=-500 mA, IB=-50 mA -0.45 -0.75 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=-50 mA -1 -1.3 hFE(1) VCE= -2V, IC= -150mA 75 140 300 hFE(2) VCE=- 2V, IC= -500mA 20 50 * DC current gain * Turn-on time ton Storage time tstg Turn -off time toff Collector output capacitance Cob Transition frequency fT uA V 35 VCC=-30V IC= -150mA, IB1=-IB2= -15mA 225 ns 255 VCB= -10V, IE= 0,f=1MHz VCE= -10V, IE= 20mA Unit 5 150 400 8 pF MHz * : Pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SA1464-Y12 2SA1464-Y13 2SA1464-Y14 Range 75-150 100-200 150-300 Marking Y12 Y13 Y14 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1464 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SA1464 ■ Typical Characterisitics www.kexin.com.cn 3