Transistors SMD Type NPN Transistors 2SC3360 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 ● High DC Current Gain hFE=90 to 450 0.55 ● High voltage VCEO=200V +0.1 1.3 -0.1 +0.1 2.4 -0.1 ■ Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 ● Complementary to 2SA1330 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 200 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 200 Emitter - base VEBO IE= 100μA， IC= 0 5 Collector- base cut-off current ICBO VCB= 200 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 breakdown voltage V Collector-emitter saturation voltage *1 VCE(sat) IC=50mA, IB=5mA 0.1 0.3 Base - emitter saturation voltage *1 VBE(sat) IC=50mA, IB=5mA 0.8 1.2 Base - emitter voltage *1 VBE 450 DC current gain *1 ton Storage Time tstg Fall Time V 90 200 VCE= 10V, IC= 50mA 50 200 0.15 Cob Transition frequency VCE= 10V, IC= 10mA IC=10mA,IB1=-IB2=1mA,VCC=10V VBE(off)=-2.5V tf Collector output capacitance uA VCE= 10V, IC= 10mA hFE Turn-ON Time Unit fT 1.3 us 1.6 VCB= 30V, IE=0,f=1MHz 2.8 pF VCE= 10V, IC= 10mA 160 MHz *1.pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SC3360-N15 2SC3360-N16 2SC3360-N17 Range 90-180 135-270 200-450 Marking N15 N16 N17 www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC3360 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SC3360 ■ Typical Characterisitics www.kexin.com.cn 3