English

ROHS Product
BLM2010E
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2010E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
Schematic diagram
● VDS = 20V,ID =7A
Typ.R DS(ON) = 16mΩ @ VGS=4.5V
Typ.R DS(ON) = 20mΩ @ VGS=2.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
Marking and pin Assignment
● Surface Mount Package
Application
●PWM application
●Load switch
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2010E
BLM2010E
TSSOP-8
Ø330mm
12mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
Unit
20
V
±12
V
7
A
30
A
1.5
W
-55 To 150
℃
83.3
℃/W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
-
V
1
µA
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250µA
20
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
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ROHS Product
BLM2010E
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
-
-
±10
µA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250µA
0.5
0.65
0.9
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6.5A
-
16
21
mΩ
VGS=2.5V, ID=5.5A
-
20
27
mΩ
VDS=5V,ID=7A
-
20
-
S
-
1150
-
PF
-
185
-
PF
-
145
-
PF
-
6
nS
On Characteristics (Note 3)
Forward Transconductance
gFS
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=10V,RL=1.35Ω
-
13
nS
td(off)
VGS=5V,RGEN=3Ω
-
52
nS
-
16
nS
-
15
nC
-
0.8
-
nC
-
3.2
-
nC
-
-
1.2
V
-
-
7
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=7A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=1A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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ROHS Product
BLM2010E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
D
ton
tr
td(off)
90%
Vout
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
PD Power(W)
Rdson On-Resistance(mΩ)
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
ID- Drain Current (A)
Normalized On-Resistance
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
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ROHS Product
C Capacitance (pF)
ID- Drain Current (A)
BLM2010E
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 8 Capacitance vs Vds
Rdson (mΩ)
Is- Reverse Drain Current (A)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs Vds
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Figure 13
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Safe Operation Area
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ROHS Product
r(t),Normalized Effective
Transient Thermal Impedance
BLM2010E
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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ROHS Product
BLM2010E
TSSOP-8 PACKAGE INFORMATION
Symbol
D
E
b
c
E1
A
A2
A1
e
L
H
Θ
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Dimensions In Millimeters
Min
Max
2.900
3.100
4.300
4.500
0.190
0.300
0.090
0.200
6.250
6.550
1.100
0.800
1.000
0.020
0.150
0.65(BSC)
0.500
0.700
0.25(TYP)
1°
7°
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