MTBA5Q10Q8

CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 1/12
2N- AND 2P-Channel Logic Level Enhancement Mode MOSFET
MTBA5Q10Q8
BVDSS
ID
RDSON(MAX.)
N-CH
100V
2.5A
185mΩ
P-CH
-100V
-1.7A
300mΩ
Description
The MTBA5Q10Q8 consists of two N-channel and two P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOP-8
MTBA5Q10Q8
G：Gate S：Source D：Drain
Ordering Information
Device
MTBA5Q10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5Q10Q8
CYStek Product Specification
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2)
TA=70 °C, VGS=10V (-10V)
ID
Pulsed Drain Current (Note 1)
IDM
TA=25°C
Power Dissipation
Limits
N-channel
P-channel
100
-100
±20
±20
2.5
-1.7
2.1
-1.4
10
-6.8
1.66
PD
TA=100°C
Operating Junction and Storage Temperature Range
V
A
W
0.83
Tj; Tstg
Unit
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
36
90 (Note 2)
Unit
°C/W
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
100
1.0
-
1.4
151
155
8
2.5
±100
1
25
185
190
-
V
V
nA
μA
μA
-
1237
38
27
13
9
36
9
18
4.2
3.6
-
-
0.9
-
1.2
2.5
-
-
10
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*IS
*ISM
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=80V, VGS=0
VDS=70V, VGS=0, Tj=125°C
ID=2.5A, VGS=10V
ID=2A, VGS=4.5V
VDS=5V, ID=2.5A
pF
VDS=20V, VGS=0, f=1MHz
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=80V, ID=2.5A, VGS=10V
V
VGS=0V, IS=2.5A
mΩ
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTBA5Q10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 3/12
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-100
-1.0
-
-1.4
246
260
5
-2.5
±100
-1
-25
300
315
-
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VSD
*IS
-
1406
56
33
14
10
37
10
19
3.7
4.8
-
-
-0.9
-
-1.2
-1.7
*ISM
-
-
-6.8
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-80V, VGS=0
VDS=-70V, VGS=0, Tj=125°C
ID=-1.7A, VGS=-10V
ID=-1A, VGS=-4.5V
VDS=-5V, ID=-1.7A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-80V, ID=-1.7A, VGS=-10V
V
VGS=0V, IS=-1.7A
V
nA
μA
mΩ
Dynamic
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTBA5Q10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 4/12
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
9
BVDSS, Normalized Drain-Source
Breakdown Voltage
10
10V, 9V, 8V, 7V, 6V, 5V, 4V
ID, Drain Current (A)
8
7
6
VGS=3V
5
4
3
2
1.2
1
0.8
ID=250μA,
VGS=0V
1
0.6
0
0
1
-75 -50 -25
5
2
3
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
VGS=2.5V
1000
VGS=3V
VGS=4.5V
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
R DS(on), Normalized Static DrainSource On-State Resistance
400
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=2.5A
350
300
250
200
150
VGS=10V, ID=2.5A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 151mΩ typ.
0.4
100
0
MTBA5Q10Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
100
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=50V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
8
VDS=80V
6
4
2
ID=2.5A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3
RDSON
Limite
10
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
100μs
1ms
1
10ms
100ms
0.1
1s
TA=25°C, Tj=175°C
VGS=10V, θJA=90°C/W
Single Pulse
0.01
DC
2.5
2
1.5
1
TA=25°C
VGS=10V
RθJA=90°C/W
0.5
0
0.001
0.1
MTBA5Q10Q8
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 6/12
Typical Characteristics(Cont.) : Q1( N-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1000
TJ(MAX) =175°C
TA=25°C
θJA=90°C/W
100
10
1
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTBA5Q10Q8
CYStek Product Specification
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 7/12
CYStech Electronics Corp.
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
8
-ID, Drain Current (A)
1.4
10V
9V
8V
7V
6V
5V
4V
6
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10
-VGS=3V
4
2
1.2
1
0.8
-ID=250μA,
VGS=0V
0.6
0
0
1
-75 -50 -25
5
2
3
4
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
-VGS=4.5V
-VGS=10V
1000
-VGS=2.5V
-VGS=3V
100
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
-IDR, Reverse Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
550
R DS(on), Normalized Static DrainSource On-State Resistance
600
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
-ID=1.7A
500
450
400
350
300
250
1.8
1.6
-VGS=10V, -ID=1.7A
1.4
1.2
1
0.8
RDSON@Tj=25°C : 246mΩ typ.
0.6
0.4
200
0
MTBA5Q10Q8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 8/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.6
-ID=250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
-VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Gate Charge Characteristics
10
1
0.1
-VDS=5V
Pulsed
Ta=25°C
VDS=-50V
8
VDS=-80V
6
4
2
ID=-1.7A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
100μs
1ms
1
10ms
100ms
0.1
1s
0.01
8
12
16
Qg, Total Gate Charge(nC)
20
24
2
RDSON
Limite
-ID, Maximum Drain Current(A)
10
4
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
-ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
TA=25°C, Tj=175°C
VGS=-10V, θJA=90°C/W
Single Pulse
DC
1.8
1.6
1.4
1.2
1
0.8
TA=25°C
VGS=-10V
RθJA=90°C/W
0.6
0.4
0.2
0
0.001
0.1
MTBA5Q10Q8
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 9/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1000
TJ(MAX) =175°C
TA=25°C
θJA=90°C/W
100
10
1
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTBA5Q10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTBA5Q10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA5Q10Q8
CYStek Product Specification
Spec. No. : C934Q8
Issued Date : 2013.10.01
Revised Date : 2013.10.03
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
E
D
BA5Q10
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTBA5Q10Q8
CYStek Product Specification