MTB23C04J4

Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 1/13
CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
MTB23C04J4
Features
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
40V
5.2A
20 mΩ
28 mΩ
P-CH
-40V
-6.2A
13.3 mΩ
17.8 mΩ
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
Outline
MTB23C04J4
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(-10V)
Continuous Drain Current @ TC=100°C, VGS=10V(-10V)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V)
Pulsed Drain Current *1
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
Operating Junction and Storage Temperature Range
MTB23C04J4
Symbol
VDS
VGS
(Note1)
(Note1)
(Note4)
ID
(Note4)
(Note3)
(Note1)
(Note1)
(Note2)
(Note2)
IDM
PD
PDSM
Tj, Tstg
Limits
N-channel P-channel
40
±20
22
15.6
5.2
4.2
30
-40
±20
-26
-18.4
-6.2
-5.0
-30
25
12.5
2.4
1.7
-55~+175
Unit
V
A
W
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 2/13
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6
Thermal Resistance, Junction-to-ambient, max (Note2)
62.5
°C/W
Rth,j-a
Thermal Resistance, Junction-to-ambient, max (Note4)
90
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
trr *1
Qrr *1
Min.
Typ.
Max.
40
1.0
-
1.6
20
28
7.9
2.5
±100
1
10
28
38
-
-
10
2.6
2.7
14
16
34
22
695
57
48
-
-
0.74
16
10
5
30
1
-
Unit
Test Conditions
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=32V, VGS=0V
VDS=30V, VGS=0V, Tj=55°C
VGS=10V, ID=5A
VGS=4.5V, ID=4A
VDS=5V, ID=5A
nC
VDS=20V, ID=5A, VGS=10V
ns
VDS=20V, ID=1A, VGS=10V, RG=6Ω
pF
VDS=15V, VGS=0V, f=1MHz
V
nA
μA
mΩ
A
V
ns
nC
IS=1A, VGS=0V
IF=5A, VGS=0, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
MTB23C04J4
CYStek Product Specification
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 3/13
CYStech Electronics Corp.
P-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
trr *1
Qrr *1
Min.
Typ.
Max.
-40
-1.0
-
-1.2
13.3
17.8
18
-2.5
±100
-1
-10
20
26
-
-
38
9.8
11
30
20
100
36
2977
243
201
-
-
-0.7
24
18
-6
-30
-1
-
Unit
Test Conditions
S
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-32V, VGS=0V
VDS=-30V, VGS=0V, Tj=55°C
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-6A
nC
VDS=-20V, ID=-6A, VGS=-10V
ns
VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω
pF
VDS=-15V, VGS=0V, f=1MHz
V
nA
μA
mΩ
A
V
ns
nC
IS=-1A, VGS=0V
IF=-6A, VGS=0, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB23C04J4-0-T3-G
Package
TO-252
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB23C04J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 4/13
Q1, N-CH Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V, 5V
ID, Drain Current(A)
25
4V
20
15
10
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
5
VGS=3V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2.5V
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=3V
100
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
100
0
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.2
90
R DS(ON), Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=5A
80
70
60
50
40
30
20
10
2
VGS=10V, ID=5A
1.8
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 20mΩ typ.
0.6
0.4
0
0
MTB23C04J4
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 5/13
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
Gate Charge Characteristics
VDS=30V
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
8
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
10
100
VDS=20V
VDS=10V
6
4
2
ID=5A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
4
6
8
Qg, Total Gate Charge(nC)
10
12
6
ID, Maximum Drain Current(A)
100
10
2
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
0
Tj, Junction Temperature(°C)
RDS(ON) Limit
100μs
1ms
1
10ms
100ms
0.1
1s
TA=25°C, Tj=175°C, VGS=10V
RθJA=90°C/W,Single Pulse
DC
5
4
3
2
TA=25°C, VGS=10V
RθJA=90°C/W
1
0
0.01
0.01
MTB23C04J4
0.1
1
10
100
VDS , Drain-Source Voltage(V)
1000
25
50
75
100
125
TJ, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 6/13
Q1, N-CH Typical Characteristics(Cont.)
Typical Transfer Characteristics
30
50
VDS=5V
25
TJ(MAX) =175°C
TA=25°C
θJA=90°C/W
40
20
Power (W)
ID, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
15
10
30
20
10
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB23C04J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 7/13
Q2, P-CH Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-10V ,-9V, -8V,-7V,-6V,-5V,-4V
-ID, Drain Current (A)
25
20
VGS=-3V
15
10
VGS=-2V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
1
2
3
4
-VDS , Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1000
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-2.5V
VGS=-4.5V
VGS=-3V
100
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=-10V
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
R DS(on) , Normalized Static Drain-Source
On-State Resistance
200
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
4
6
-IS , Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
180
160
2
ID=-6A
140
120
100
80
60
40
20
2
1.8
VGS=-10V, ID=-6A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 13.3mΩ typ.
0.6
0.4
0
0
MTB23C04J4
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 8/13
CYStech Electronics Corp.
Q2, P-CH Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
10000
-VGS(th) , Threshold Voltage(V)
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
100
VDS=-30V
10
1
VDS=-5V
Pulsed
TA=25°C
VDS=-20V
8
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=-10V
6
4
2
ID=-6A
0.1
0
0.01
0.1
1
10
-ID, Drain Current(A)
100
0
6
12
18
24
30
Qg, Total Gate Charge(nC)
36
42
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
8
-ID, Maximum Drain Current(A)
100
-ID, Drain Current(A)
0
10
100μs
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=175C, VGS=-10V
θJA=90°C/W, Single Pulse
DC
7
6
5
4
3
2
TA=25°C, VGS=-10V
RθJA=90°C/W
1
0
0.01
0.01
MTB23C04J4
0.1
1
10
100
-ID, Drain-Source Voltage(V)
1000
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 9/13
Q2, P-CH Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
30
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
VDS=-5V
20
Power (W)
-ID, Drain Current (A)
TJ(MAX) =175°C
TA=25°C
θJA=90°C/W
40
25
15
30
20
10
10
5
0
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=90°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB23C04J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 10/13
Reel Dimension
Carrier Tape Dimension
MTB23C04J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 11/13
Recommended soldering footprint
Unit : mm
MTB23C04J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 12/13
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB23C04J4
CYStek Product Specification
Spec. No. : C947J4
Issued Date : 2014.01.29
Revised Date :
Page No. : 13/13
CYStech Electronics Corp.
TO-252 Dimension
Marking:
Tab
Device Name
Date code
B23
C04
□□□□
Style: Pin 1.Soure 1 2.Gate 1 3.&Tab
Drain 1& Drain 2 4. Source 2 5. Gate 2
4-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J4
Inches
Min.
Max.
0.0866 0.0945
0.0000 0.0059
0.0157 0.0236
0.0199 0.0315
0.2047 0.2165
0.0177 0.0217
0.2126 0.2283
0.1799
-
DIM
A
A1
b
b2
b3
c2
D
D1
Millimeters
Min.
Max.
2.20
2.40
0.00
0.15
0.40
0.60
0.50
0.80
5.20
5.50
0.45
0.55
5.40
5.80
4.57
-
DIM
E
E1
e
F
H
L
L1
L4
Inches
Min.
Max.
0.2520 0.2677
0.1500
0.0500 REF
0.0157 0.0236
0.3701 0.4016
0.0551 0.0697
0.0945 0.1181
0.0315 0.0472
Millimeters
Min.
Max.
6.40
6.80
3.81
1.27 REF
0.40
0.60
9.40
10.20
1.40
1.77
2.40
3.00
0.80
1.20
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB23C04J4
CYStek Product Specification