MTC3588N6

Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 1/12
CYStech Electronics Corp.
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588N6
N-CH
BVDSS
14V
ID @ TA=25 °C 5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
24.7mΩ(VGS=2.5V)
RDSON(TYP.)
39.5mΩ(VGS=1.8V)
67.3mΩ(VGS=1.5V)
P-CH
-14V
-3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
88.5mΩ(VGS=-1.8V)
154.3mΩ(VGS=-1.5V)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTC3588N6
SOT-26
D1
S1
G：Gate S：Source D：Drain
D2
G1
S2
G2
Ordering Information
Device
MTC3588N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC3588N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
BVDSS
VGS
ID
IDM
PD
Tj, Tstg
Limits
N-channel P-channel
14
-14
±8
±8
5.4
-3.6
4.3
-2.9
20
-20
1.14
0.01
-55~+150
Unit
V
A
W
W / °C
°C
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.
2.Pulse width limited by maximum junction temperature.
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
14
0.4
-
8
17.6
24.7
39.5
67.3
5.6
1.0
±100
1
10
25
33
75
115
-
V
mV/°C
V
nA
407
115
100
5
18.8
49.6
30.8
6.5
0.7
2.3
1
-
0.87
12
2.3
1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Source-Drain Diode
*VSD
*trr
*Qrr
MTC3588N6
Test Conditions
S
VGS=0V, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0V
VDS=12V, VGS=0V
VDS=10V, VGS=0V, Tj=70°C
ID=5A, VGS=4.5V
ID=4.6A, VGS=2.5V
ID=4.1A, VGS=1.8V
ID=2A, VGS=1.5V
VDS=5V, ID=3A
pF
VDS=10V, VGS=0V, f=1MHz
ns
VDS=10V, ID=1A, VGS=5V, RG=3.3Ω
nC
VDS=10V, ID=3A, VGS=4.5V
Ω
f=1MHz
V
ns
nC
VGS=0V, IS=5.2A
μA
mΩ
IF=3A, VGS=0V, dIF/dt=100A/μs
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 3/12
CYStech Electronics Corp.
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
-14
-0.4
-
-5
45.1
65.6
88.5
154.3
5.6
-1.0
±100
-1
-10
60
87
178
305
-
V
mV/°C
V
nA
561
153
142
5
18.8
49.6
30.8
8
1
2.8
9.3
-
-0.9
27
7
-1.2
-
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Source-Drain Diode
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0V, ID=-250μA
Reference to 25°C, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-12V, VGS=0V
VDS=-10V, VGS=0, Tj=70°C
ID=-3.6A, VGS=-4.5V
ID=-3.2A, VGS=-2.5V
ID=-1A, VGS=-1.8V
ID=-1A, VGS=-1.5V
VDS=-5V, ID=-2A
pF
VDS=-10V, VGS=0V, f=1MHz
ns
VDS=-10V, ID=-1A, VGS=-5V, RG=3.3Ω
nC
VDS=-10V, ID=-2A, VGS=-4.5V
Ω
f=1MHz
V
ns
nC
VGS=0V, IS=-3.4A
μA
mΩ
IF=-2A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
80
110
Unit
(Note )
°C/W
Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad
MTC3588N6
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 4/12
CYStech Electronics Corp.
N-channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
5V, 4V, 3.5V, 3V, 2.5V
16
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
20
12
VGS=2V
8
4
VGS=1.5V
1.2
1.0
0.8
0.4
0
0
1
2
3
4
-75
5
-25
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=1.5V
VGS=1.8V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
-50
VDS, Drain-Source Voltage(V)
1000
100
10
VGS=2.5V
VGS=4.5V
VGS=0V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
1
2
3
4
IDR , Reverse Drain Current(A)
5
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
1.8
180
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
ID=250μA,
VGS=0V
0.6
ID=5A
160
140
120
100
80
60
40
20
1.6
VGS=4.5V, ID=5A
1.4
1.2
1.0
0.8
0.6
RDS(ON) @Tj=25°C : 17.6mΩ typ.
0.4
0
0
MTC3588N6
1
2
3
4
5
6
VGS, Gate-Source Voltage(V)
7
8
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 5/12
CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
VGS(th), NormalizedThreshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
ID=250μA
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
1
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
50
75 100 125 150 175
Gate Charge Characteristics
50
10
ID=3A
VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=110°C/W
40
Power (W)
25
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
30
20
10
0
0.001
8
VDS=10V
6
4
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
ID, Maximum Drain Current(A)
100μs
RDS(ON)
Limited
10ms
1
100ms
0.01
0.01
TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=110°C/W
Single Pulse
DC
8
10
12
14
5.0
4.0
3.0
2.0
1.0
TA=25°C, VGS=4.5V, RθJA=110°C/W
0.0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTC3588N6
6
6.0
1ms
0.1
4
Maximum Drain Current vs JunctionTemperature
100
10
2
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
ID, Drain Current(A)
0
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 6/12
CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Typical Transfer Characteristics
10
GFS , Forward Transfer Admittance(S)
12
VDS=5V
ID, Drain Current(A)
10
8
6
4
2
0.5
1
1.5
2
2.5
VGS, Gate-Source Voltage(V)
1
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0.001
0
0
VDS=5V
3
0.01
0.1
1
ID, Drain Current(A)
10
Transient Thermal Response Curves
1
r(t), Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=11 0°C/W
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC3588N6
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 7/12
CYStech Electronics Corp.
P-channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
20
-VGS=3V
16
-ID, Drain Current (A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
5V, 4V
12
-VGS=2.5V
8
-VGS=2V
4
1.4
1.2
1.0
0.8
ID=-250μA,
VGS=0V
0.6
-
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-1.5V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-1.8V
100
VGS=-2.5V
Tj=25°C
VGS=0V
1.0
0.8
Tj=150°C
0.6
0.4
VGS=-4.5V
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
-IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
1.6
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-3.6A
250
200
150
100
50
1.4
VGS=-4.5V, ID=-3.6A
1.2
1.0
0.8
0.6
RDS(ON) @Tj=25°C : 45.1mΩ typ.
0.4
0
0
MTC3588N6
1
2
3
4
5
6
-VGS, Gate-Source Voltage(V)
7
8
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 8/12
CYStech Electronics Corp.
P-channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) ,Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
Crss
1.4
ID=-250μA
1.2
1.0
0.8
0.6
0.4
100
0.1
1
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
50
10
ID=-2A
TJ(MAX) =150°C
TA=25°C
RθJA=110°C/W
-VGS, Gate-Source Voltage(V)
Power (W)
40
30
20
10
0
0.001
8
VDS=-10V
6
4
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs JunctionTemperature
100
-I D, Maximum Drain Current(A)
4.0
100μs
-I D, Drain Current (A)
2
10
RDS(ON)
Limited
1ms
1
10ms
100m
0.1
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=110°C/W
Single Pulse
DC
0.01
3.5
3.0
2.5
2.0
1.5
1.0
TA=25°C, VGS=-4.5V, RθJA=110°C/W
0.5
0.0
0.01
MTC3588N6
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 9/12
CYStech Electronics Corp.
P-channel Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Typical Transfer Characteristics
10
GFS, Forward Transfer Admittance-(S)
20
VDS=5V
ID, Drain Current(A)
16
12
8
4
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
VDS=-5V
1
VDS=-10V
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
Transient Thermal Response Curves
1
r(t), Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=110 °C/W
0.05
0.02
0.01
0.01
0.001
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTC3588N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTC3588N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC3588N6
CYStek Product Specification
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date :
Page No. : 12/12
CYStech Electronics Corp.
SOT-26 Dimension
Marking:
3588
□□□□
Device Name
●
●
Date Code
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
Pin 4. Source
Pin 5. Drain
Pin 6. Drain
Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
DIM
E
E1
e
e1
L
θ
Millimeters
Min.
Max.
1.500
1.700
2.650
2.950
0.950 (BSC)
1.800
2.000
0.300
0.600
0°
8°
(D)
(D)
(G)
(S)
(D)
(D)
Inches
Min.
Max.
0.059
0.067
0.104
0.116
0.037 (BSC)
0.071
0.079
0.012
0.024
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC3588N6
CYStek Product Specification