MTB25C04Q8

Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 1/12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTB25C04Q8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
BVDSS
ID @ TA=25°C, VGS=10V(-10V)
ID @ TA=70°C, VGS=10V(-10V)
ID @ TC=25°C, VGS=10V(-10V)
ID @ TC=100°C, VGS=10V(-10V)
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
40V
5.7A
4.8A
10A
7.1A
21.2mΩ
30.1 mΩ
P-CH
-40V
-4.9A
-4.1A
-8.6A
-6.1A
32.7 mΩ
47.8 mΩ
Outline
MTB25C04Q8
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTB25C04Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB25C04Q8
CYStek Product Specification
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
ID
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2)
TA=70 °C, VGS=10V (-10V)
IDSM
Pulsed Drain Current (Note 1)
IDM
Power Dissipation for Dual Operation @TC=25°C
PD
Limits
N-channel
P-channel
40
-40
±20
±20
10
-8.6
7.1
-6.1
5.7
-4.9
4.8
-4.1
30
-30
Power Dissipation for Dual Operation @TA=25°C
Power Dissipation for Single Operation @TA=25°C
V
A
6
3
PDSM
Unit
1.9 (Note 2)
W
1.1 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Value
25
50
78 (Note 2)
135 (Note 3)
Unit
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s, single operation.
3.Surface mounted on minimum copper pad, pulse width≤10s, single operation.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
40
1.0
-
0.03
21.2
30.1
8.6
2.5
±100
1
25
27
40
-
V
V/°C
V
nA
-
597
50
41
-
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
MTB25C04Q8
S
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=32V, VGS=0V
VDS=32V, VGS=0, Tj=125°C
ID=7A, VGS=10V
ID=6A, VGS=4.5V
VDS=5V, ID=7A
pF
VDS=20V, VGS=0, f=1MHz
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Body Diode
*IS
-
7.6
16.2
24
15.2
11.4
2.4
2.0
1.7
-
*ISM
-
-
5.7
-
-
30
*VSD
trr *
Qrr *
-
0.86
6.3
2.6
1.2
-
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 3/12
ns
VDS=20V, ID=1A, VGS=10V, RG=6Ω
nC
VDS=20V, ID=5A, VGS=10V
Ω
f=1MHz
A
V
ns
nC
VGS=0V, IS=7A
IF=5A, dIF/dt=100A/μs
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
-40
-1.0
-
-0.02
32.7
47.8
10.7
-2.5
±100
-1
-25
45
65
-
V
V/°C
V
nA
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
Body Diode
*IS
-
1023
88
71
7.6
18
54.8
17.2
19.4
3.4
3.2
17.7
-
-
-
-4.9
*ISM
-
-
-30
*VSD
trr *
Qrr *
-
-0.86
8.8
3.8
-1.2
-
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0V, ID=-250μA
Reference to 25°C, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-32V, VGS=0V
VDS=-32V, VGS=0, Tj=125°C
ID=-6A, VGS=-10V
ID=-5A, VGS=-4.5V
VDS=-5V, ID=-6A
pF
VDS=-20V, VGS=0, f=1MHz
ns
VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-20V, ID=-5A, VGS=-10V
Ω
f=1MHz
μA
mΩ
Dynamic
A
V
ns
nC
VGS=0V, IS=-6A
IF=6A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB25C04Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 4/12
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
5V
25
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V
20
4V
15
3.5V
10
3V
5
VGS=2.5V
1
2
3
4
VDS, Drain-Source Voltage(V)
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
1.2
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=3V
100
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
10
0.01
0.2
0.1
1
ID, Drain Current(A)
10
0
100
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.8
450
R DS(ON), Normalized Static DrainSource On-State Resistance
500
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
2
ID=7A
400
350
300
250
200
150
100
50
2.4
VGS=10V, ID=7A
2
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 21.2mΩ typ.
0.4
0
0
MTB25C04Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 5/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=20V
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
VDS=10V
6
4
VDS=30V
2
ID=5A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
7
100μ s
10
RDS(ON)
Limit
1ms
1
10ms
100ms
1s
0.1
TA=25°C, Tj=175°C, VGS=10V
RθJA=78°C/W,Single Pulse
DC
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
6
5
4
3
2
TA=25°C, Tj=175°C,VGS=10V
RθJA=78°C/W
1
0
0.01
0.01
MTB25C04Q8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 6/12
Typical Characteristics(Cont.) : Q1( N-channel)
50
30
VDS=10V
25
ID, Drain Current (A)
TJ(MAX) =175°C
TA=25°C
θ JA=78°C/W
40
Power (W)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
30
20
10
20
15
10
5
0
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.Rθ JA=78 °C/W
0.05
0.02
0.01
0.01
0.001
1.E-04
MTB25C04Q8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 7/12
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-10V, -9V, -8V,-7V,-6V,-5V
-I D, Drain Current (A)
25
-4V
20
-3.5V
15
10
-3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
VGS=-2.5V
0.4
0
0
1
-75 -50 -25
5
2
3
4
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
1000
1.2
-VSD , Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
VGS=0V
VGS=-3V
100
VGS=-4.5V
10
0.01
VGS=-10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.1
1
-ID, Drain Current(A)
10
0
100
R DS(on) , Normalized Static Drain-Source
On-State Resistance
270
ID=-6A
210
180
150
120
90
60
30
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
4
6
-IS , Source Drain Current(A)
8
10
2.4
300
240
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
10
2
VGS=-10V, ID=-6A
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 32.7mΩ typ.
0.4
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB25C04Q8
CYStek Product Specification
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 8/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) , Threshold Voltage(V)
Capacitance---(pF)
10000
Ciss
1000
C oss
100
1.2
1
ID=-1mA
0.8
0.6
ID=-250μA
Crss
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
10
1
VDS=-5V
Pulsed
TA=25°C
0.1
0.01
0.001
VDS=-20V
8
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
VDS=-10V
6
4
VDS=-30V
2
ID=-5A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
6
100μs
RDS(ON)
Limit
10
1ms
1
10ms
100ms
0.1
TA=25°C, Tj=175°C, VGS=-10V
θ JA=78°C/W, Single Pulse
1s
DC
-I D, Maximum Drain Current(A)
100
-I D, Drain Current(A)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
5
4
3
2
TA=25°C, Tj=175°C, VGS=-10V
RθJA=78°C/W
1
0
0.01
0.01
MTB25C04Q8
0.1
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 9/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
Typical Transfer Characteristics
30
VDS=-10V
-I D, Drain Current (A)
40
Power (W)
25
TJ(MAX) =175°C
TA=25°C
θ JA=78°C/W
30
20
10
20
15
10
5
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
0
1
2
3
4
-VGS, Gate-Source Voltage(V)
5
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.RθJA=78 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
Recommended Soldering Footprint
MTB25C04Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTB25C04Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB25C04Q8
CYStek Product Specification
Spec. No. : C955Q8
Issued Date : 2015.03.09
Revised Date :
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
K
E
D
B25
C04
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB25C04Q8
CYStek Product Specification