MTB20A06Q8 BVDSS

CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB20A06Q8
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=6A
RDS(ON)@VGS=4.5V, ID=5A
60V
6A
8.5A
15.4 mΩ(typ)
16.3 mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free & halogen-free package
Symbol
Outline
MTB20A06Q8
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTB20A06Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A06Q8
CYStek Product Specification
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 2)
Continuous Drain Current
Symbol
Limits
VDS
VGS
60
±20
6.0
4.8
8.5
6.0
50
23
26.5
2
1.6
0.9
TA=25°C, VGS=10V
TA=70°C, VGS=10V
TC=25°C, VGS=10V
TC=100°C, VGS=10V
IDSM
ID
Pulsed Drain Current (Note 3)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=23A, RG=25Ω
IDM
IAS
EAS
Power Dissipation for Dual Operation
PDSM
Power Dissipation for Single Operation
TC=25°C
TC=100°C
Power Dissipation
Operating Junction and Storage Temperature
Unit
V
A
mJ
(Note 2)
(Note 2)
(Note 2)
PD
3.75
1.88
Tj, Tstg
-55~+175
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual operation
Thermal Resistance, Junction-to-ambient, max , single operation
Symbol
Rth,j-c
Rth,j-a
Value
40
62.5
78 (Note 2)
135 (Note 3)
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C, t≤10s. 135°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on
RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial TJ=25°
C.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
60
1.0
-
16
-
2.5
±100
1
25
V
V
S
nA
Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
MTB20A06Q8
μA
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=6A
VGS=±20V
VDS =48V, VGS =0V
VDS =48V, VGS =0V, Tj=55°C
CYStek Product Specification
CYStech Electronics Corp.
*RDS(ON)
-
15.4
16.3
20
25
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 3/9
mΩ
VGS =10V, ID=6A
VGS =4.5V, ID=5A
nC
ID=6A, VDS=48V, VGS=10V
pF
VGS=0V, VDS=25V, f=1MHz
ns
VDS=30V, ID=6A, VGS=10V, RG=3.3Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
V
ns
nC
IF=6A, VGS=0V
Dynamic
Qg (VGS=10V) *1, 2
40.4
Qg (VGS=4.5V) *1, 2
20.1
Qgs *1, 2
6.3
Qgd *1, 2
7.2
Ciss
2400
Coss
107
Crss
91
td(ON) *1, 2
14.8
tr
16.2
*1, 2
td(OFF) *1, 2
49
tf *1, 2
7.2
Rg
1.5
Source-Drain Diode Ratings and Characteristics
VSD *1
0.78
1.2
trr
15.4
Qrr
11
-
IF=6A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB20A06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
50
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V, 5V, 4V
ID, Drain Current (A)
40
30
20
VGS=3V
10
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=2.5V
0.4
0
0
1
-75 -50 -25
5
2
3
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
90
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
100
80
70
60
VGS=2.5V
50
VGS=3.5V
VGS=4.5V
VGS=10V
40
30
20
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.2
0
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
120
2.8
R DS(on), Normalized Static DrainSource On-State Resistance
ID=6A
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
100
80
60
40
20
2.4
VGS=10V, ID=6A
RDS(ON) @Tj=25°C : 15.4mΩ typ.
2
1.6
1.2
0.8
VGS=4.5V, ID=5A
RDS(ON) @Tj=25°C : 16.3 mΩ typ.
0.4
0
0
0
MTB20A06Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
1
ID=1mA
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=15V
VDS=5V
10
1
VDS=30V
0.1
Ta=25°C
Pulsed
0.01
0.001
8
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
VDS=30V
6
VDS=48V
4
2
ID=6A
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
10
15 20 25 30 35
Qg, Total Gate Charge(nC)
40
45
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
7
100
ID, Maximum Drain Current(A)
RDSON
Limited
ID, Drain Current(A)
5
100μ s
10
1ms
10ms
1
100ms
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=78°C/W
Single Pulse
1s
6
5
4
3
2
1
TA=25°C, VGS=10V, RθJA=78°C/W
DC
0
0.01
0.1
MTB20A06Q8
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
Typical Transfer Characteristics
1000
50
900
45
VDS=10V
700
35
Power (W)
ID, Drain Current(A)
TJ(MAX) =150°C
TA=25°C
θ JA=78°C/W
800
40
30
25
20
600
500
400
15
300
10
200
5
100
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.RθJA=78 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB20A06Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB20A06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB20A06Q8
CYStek Product Specification
Spec. No. : C925Q8
Issued Date : 2014.11.12
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
B20
A06
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
1.270 (BSC)
0.400
1.270
8°
0
Inches
Min.
Max.
0.150
0.157
0.228
0.244
0.050 (BSC)
0.016
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB20A06Q8
CYStek Product Specification