MTN3207F3

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN3207F3
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 1/9
BVDSS : 75V
RDS(ON) : 8.6 mΩ(typ.)
ID : 80A
Description
The MTN3207F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-263 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Switching Mode Power Supply
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Ordering Information
Device
MTN3207F3-0-T7-X
Shipping
Package
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7: 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN3207F3
CYStek Product Specification
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 2/9
CYStech Electronics Corp.
Symbol
Outline
MTN3207F3
TO-263
G：Gate
D：Drain
S：Source
G
D S
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt (Note 4)
ESD susceptibility (Note 5)
Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
75
±20
80*
56*
320*
700
40
30
4.5
2000
mJ
A
mJ
V/ns
V
TL
300
°C
300
2
-55~+175
W
W/°C
°C
PD
Tj, Tstg
Unit
V
A
*Drain current limited by maximum junction temperature
Note : 1. TJ=+25℃ to +150℃.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. IAS=80A, VDD=25V, L=0.14mH, RG=25Ω, starting TJ=+25℃.
4. ISD=40A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃.
5. Human body model, 1.5kΩ in series with 100pF.
MTN3207F3
CYStek Product Specification
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 3/9
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.5
62
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
75
2.0
-
15.5
8.6
4.0
±100
1
10
9.5
100
31
36
20
66
24
30
5538
517
411
-
36
50
80
320
1.3
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Unit
Test Conditions
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =25V, ID=40A
VGS=±20V
VDS =60V, VGS =0V
VDS =50V, VGS =0V, Tj=125°C
VGS =10V, ID=40A
nC
ID=40A, VDD=38V, VGS=10V
ns
VDD=38V, ID=80A, VGS=10V,
RG=3.3Ω
pF
VGS=0V, VDS=25V, f=1MHz
V
S
nA
μA
A
V
ns
nC
IS=40A, VGS=0V
VGS=0V, IF=80A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN3207F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
250
ID, Drain Current (A)
100
10V
9V
8V
BVDSS, Drain-Source Breakdown
Voltage(V)
300
VGS=7V
200
150
VGS=6V
100
90
80
70
ID=250μA,
VGS=0V
VGS=5V
50
60
-100
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
10
-50
Static Drain-Source On-State resistance vs Drain Current
250
VDS=10V
VGS=10V
200
ID, Drain Current(A)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
200
Typical Transfer Characteristics
1000
100
10
1
150
100
50
0
0.01
0.1
1
10
ID, Drain Current(A)
100
0
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
4
6
8
10
VGS, Gate-Source Voltage(V)
12
Source Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
100
RDS(on), Static Drain-Source OnState Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
ID=40A
80
60
40
20
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2
MTN3207F3
4
6
8
VGS, Gate-Source Voltage(V)
10
0
5
10
15
IS, Source Drain Current(A)
20
CYStek Product Specification
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Drain-Source On-State Resistance vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
Capacitance---(pF)
Ciss
C oss
1000
Crss
20
15
VGS=10V, ID=40A
10
VGS=10V, ID=10A
5
0
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
12
180
4
VDS=60V
10
VGS(th), Threshold Voltage(V)
VGS, Gate-Source Voltage(V)
20
60
100
140
Tj, Junction Temperature(°C)
Threshold Voltage vs Junction Tempearture
Gate Charge Characteristics
VDS=38V
VDS=15V
8
6
4
ID=38A
2
ID=250uA
3.5
3
2.5
2
1.5
0
0
20
40
60
80
100
Qg, Total Gate Charge(nC)
-60
120
-20
20
60
100
140
Tj, Junction Temperature(°C)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
1000
80
10μs
70
100
60
ID, Drain Current(A)
ID, Maximum Drain Current(A)
-20
50
40
30
20
100μs
1ms
10ms
10
DC
1
Operation in this area
is limited by RDS(ON)
0.1
10
0
0.01
25
MTN3207F3
50
75
100
125
TC, Case Temperature(°C)
150
175
1
10
VDS, Drain-Source Voltage(V)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
ZθJC(t), Thermal Response
D=0.5
0.1
0.2
1.ZθJC(t)=0.5 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN3207F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN3207F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3207F3
CYStek Product Specification
Spec. No. : C578F3
Issued Date : 2011.10.17
Revised Date : 2015.09.03
Page No. : 9/9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
B
D
2
F
α1
2
1
E
C
A
Device Name
3207
Date Code
□□□□
Style : Pin 1.Gate
2.Drain
α2
3
I
G
J
K
L
α3
3.Source
H
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3207F3
CYStek Product Specification