MTB80N08J3

CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB80N08J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=4.5V, ID=10A
80V
15A
59.6 mΩ(typ)
60.5 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTB80N08J3
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
MTB80N08J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB80N08J3
CYStek Product Specification
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.3mH, ID=15A, VDD=25V
(Note 2)
Symbol
VDS
VGS
IDM
IAR
Limits
80
±25
15
9.5
3.8
3
60
15
EAS
34
3.9
39
15
2.5
1.6
-55~+150
ID
IDSM
Repetitive Avalanche Energy
(Note 3)
EAR
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
(Note 1)
PD
(Note 1)
(Note 2)
(Note 2)
PDSM
Tj, Tstg
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
(Note 2)
(Note 4)
Symbol
RθJC
RθJA
RθJA
Value
3.5
50
110
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTB80N08J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
Test Conditions
80
1
-
0.07
1.9
17
59.6
60.5
2.5
±100
1
10
80
90
V
V/°C
V
S
nA
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=15A
VGS=±25V
VDS =64V, VGS =0V
VDS =64V, VGS =0V, Tj=125°C
VGS =10V, ID=15A
VGS =4.5V, ID=10A
20
6.9
3.3
36
24
56
47
1748
50
37
-
0.87
60
90
15
60
1
-
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
mΩ
nC
VDD=40V, ID=15A,VGS=10V
ns
VDD=40V, ID=15A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=15A, VGS=0V
VGS=0, IF=15A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB80N08J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
ID, Drain Current (A)
25
BVDSS, Normalized Drain-Source
Breakdown Voltage
30
10V,9V,8V,7V,6V,5V,4V
20
15
VGS=3V
10
1.2
1
0.8
0.6
5
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=3V
VGS=4.5V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
10
4
6
8
IDR , Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
3
ID=15A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2.5
VGS=10V, ID=15A
2
1.5
1
0.5
RDS(ON) @Tj=25°C : 59.6mΩ typ.
0
0
0
MTB80N08J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-65
-35
-5
25
55
85 115
Tj, Junction Temperature(°C)
145
175
CYStek Product Specification
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-65
100
-35
55
85
115
145
175
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
8
6
4
VDS=40V
ID=15A
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
18
100
RDSON
Limited
10
ID, Maximum Drain Current(A)
100μs
ID, Drain Current(A)
-5
1ms
10ms
100ms
1s
1
DC
0.1
TC=25°C, Tj=150°C
VGS=10V, θJC=3.2°C/W
Single Pulse
16
14
12
10
8
6
4
VGS=10V, RθJC=3.2°C/W
2
0
0.01
0.1
MTB80N08J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC , Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 6/ 9
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
45
30
40
PD, Power Dissipation(W)
VDS=10V
ID, Drain Current(A)
25
20
15
10
5
35
30
25
20
15
10
5
0
0
0
2
4
6
8
VGS , Gate-Source Voltage(V)
10
0
25
50
75
100
125
150
175
TC , Case Temperature(℃)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=3.2°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB80N08J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB80N08J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB80N08J3
CYStek Product Specification
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 9/ 9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B80
N08
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB80N08J3
CYStek Product Specification