Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 1/7 CYStech Electronics Corp. High voltage switching (double) diodes BAS21/A/C/SN3 Description High voltage switching diodes encapsulated in a SOT-23 small plastic SMD package. Single diodes and double diodes with different pinning are available. Features •Fast switching speed •Low forward voltage drop •Pb-free lead plating and halogen-free package Mechanical Data •Case : SOT-23, molded plastic •Terminals : Solderable per MIL-STD-202 Method 208 •Weight : 0.008 grams(approx.) Pinning Pin 1 2 3 Outline Description BAS21 A NC K BAS21A K1 K2 A1,A2 BAS21C A1 A2 K1,K2 SOT-23 BAS21S A1 K2 K1,A1 3 1 (1) BAS21 (3)BAS21C (2)BAS21A (4)BAS21S 2 Marking: Type BAS21N3 BAS21AN3 BAS21CN3 BAS21SN3 Marking Code JS JS2 JS3 JS4 Diode configuration and symbol BAS21/A/C/SN3 CYStek Product Specification Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 2/7 CYStech Electronics Corp. Absolute Maximum Ratings(Ta=25℃, unless otherwise specified) Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-repetitive Peak Forward Surge Current Symbol VRRM VRWM VR IFM IO @ tp=1μs @ tp=100μs @ tp=1s IFSM Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range IFRM PD RθJA TJ TSTG Limits unit 250 V 400 200 9 3 1.7 625 250 500 -65~+150 -65~+150 mA mA A mA mW °C/W °C °C Characteristics (Ta=25°C) Characteristic Symbol Reverse Breakdown Voltage VBR Forward Voltage VF (Note) Reverse Leakage Current IR Diode Capacitance CD Reverse Recovery Time trr Condition IR=100μA IF=100mA IF=200mA VR=200V VR=200V, Tj=150°C VR=0V, f=1MHz IF=IR=30mA RL=100Ω measured at IR=3mA Min. Max. Unit 250 - 1 1.25 100 100 5 V V V nA μA pF - 50 ns Note: Pulse test, tp=300μs, duty cycle<2%. Ordering Information Device BAS21N3-0-T1-G BAS21AN3-0-T1-G BAS21CN3-0-T1-G BAS21SN3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Marking JS JS2 JS3 JS4 Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BAS21/A/C/SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 3/7 Typical Characteristics Reverse Leakage Current vs Reverse Voltage Forward Current vs Forward Voltage 100 150°C Pulse width=300μs Reverse Leakage Current---IR(μA) Instantaneous Forward Current---IF(mA) 1000 100 150°C 125°C 10 100°C 1 75°C 25°C 0.1 10 125℃ 100℃ 1 75℃ 0.1 25℃ 0.01 0.001 0 0.3 0.6 0.9 Forward Voltage---VF(V) 1.2 1.5 0 50 150 200 250 Power Derating Curve Junction Capacitance vs Reverse Voltage 250 10 Tj=25℃, f=1.0MHz Power Dissipation---PD(mW) Junction Capacitance---C J (pF) 100 Reverse Voltage---VR(V) 1 200 150 100 50 0 0.1 0.1 BAS21/A/C/SN3 1 10 Reverse Voltage---VR(V) 100 0 25 50 75 100 125 150 175 Ambient Temperature ---TA(℃ ) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 4/7 Typical Characteristics(Cont.) Maximum Permissible Non-repetitive Peak Forward Surge Current Peak Forward Surge Current---I FSM(A) 10 9 8 7 6 5 4 3 2 1 0 0.001 0.01 0.1 1 10 Pulse Duration---tp(ms) Recommended Soldering Footprint BAS21/A/C/SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BAS21/A/C/SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BAS21/A/C/SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335N3 Issued Date : 2009.04.07 Revised Date : 2014.02.24 Page No. : 7/7 SOT-23 Dimension Diagram: Marking: L4_ XXX 3-Lead SOT-23 Plastic Surface Mounted Package. CYStek Package Code: N3 • BAS21 N3 : Single Diode (Marking Code JS) • BAS21AN3 : Common Anode. (Marking Code JS2) • BAS21CN3 : Common Cathode. (Marking Code JS3) • BAS21SN3 : Series Connected. (Marking Code JS4) Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAS21/A/C/SN3 CYStek Product Specification