MTN3607F3

Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS : 75V
RDS(ON) : 7.8 mΩ(typ.)
MTN3607F3
ID : 75A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Switching Mode Power Supply
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Symbol
Outline
TO-263
MTN3607F3
G：Gate D：Drain S：Source
G
D S
Ordering Information
Device
MTN3607F3-0-T7-X
Package
Shipping
TO-263
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN3607F3
CYStek Product Specification
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt (Note 4)
ESD susceptibility (Note 5)
Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
75
±20
75*
52*
300*
400
40
23
4.5
2000
mJ
A
mJ
V/ns
V
TL
300
°C
230
1.53
-55~+175
W
W/°C
°C
PD
Tj, Tstg
Unit
V
A
*Drain current limited by maximum junction temperature
Note : 1. TJ=+25℃ to +150℃.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. IAS=70A, VDD=25V, L=0.1mH, RG=25Ω, starting TJ=+25℃.
4. ISD=40A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃.
5. Human body model, 1.5kΩ in series with 100pF.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN3607F3
Symbol
Rth,j-c
Rth,j-a
Value
0.65
62
Unit
°C/W
CYStek Product Specification
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 3/9
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
75
2.0
-
25.5
7.8
4.0
±100
1
10
9.5
90
24
36
20
25
27
18
5376
401
337
-
32
40
75
300
1.5
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Unit
Test Conditions
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=37.5A
VGS=±20V
VDS =60V, VGS =0V
VDS =50V, VGS =0V, Tj=125°C
VGS =10V, ID=37.5A
nC
ID=37.5A, VDD=38V, VGS=10V
ns
VDD=38V, ID=75A, VGS=10V,
RG=3.3Ω
pF
VGS=0V, VDS=25V, f=1MHz
V
S
nA
μA
A
V
ns
nC
IS=37.5A, VGS=0V
VGS=0V, IF=75A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN3607F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
100
VGS=7V
ID, Drain Current (A)
250
BVDSS, Drain-Source Breakdown
Voltage(V)
300
10V
9V
8V
200
150
VGS=6V
100
VGS=5V
90
80
70
ID=250μA,
VGS=0V
50
60
-100
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
10
-50
Static Drain-Source On-State resistance vs Drain Current
350
VGS=10V
VDS=10V
300
ID, Drain Current(A)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
200
Typical Transfer Characteristics
1000
100
10
250
200
150
100
50
1
0
0.01
0.1
1
10
ID, Drain Current(A)
0
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
4
6
8
10
VGS, Gate-Source Voltage(V)
12
Source Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
100
RDS(on), Static Drain-Source OnState Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
ID=37.5A
80
60
40
20
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0
2
MTN3607F3
4
6
8
VGS, Gate-Source Voltage(V)
10
0
5
10
15
20
25
30
IS, Source Drain Current(A)
35
40
CYStek Product Specification
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Drain-Source On-State Resistance vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
Capacitance---(pF)
Ciss
1000
C oss
Crss
20
15
VGS=10V, ID=37.5A
10
VGS=10V, ID=10A
5
0
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
12
180
4
VDS=60V
10
VGS(th), Threshold Voltage(V)
VGS, Gate-Source Voltage(V)
20
60
100
140
Tj, Junction Temperature(°C)
Threshold Voltage vs Junction Tempearture
Gate Charge Characteristics
VDS=38V
VDS=15V
8
6
4
ID=37.5A
2
ID=250uA
3.5
3
2.5
2
1.5
0
0
20
40
60
80
100
Qg, Total Gate Charge(nC)
-60
120
-20
20
60
100
140
Tj, Junction Temperature(°C)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
1000
80
10μs
70
100
60
ID, Drain Current(A)
ID, Maximum Drain Current(A)
-20
50
40
30
20
100μs
1ms
10ms
10
DC
1
Operation in this area
is limited by RDS(ON)
0.1
10
0
0.01
25
MTN3607F3
50
75
100
125
TC, Case Temperature(°C)
150
175
1
10
VDS, Drain-Source Voltage(V)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
ZθJC(t), Thermal Response
D=0.5
0.1
0.2
0.1
1.ZθJC(t)=0.65 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN3607F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN3607F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3607F3
CYStek Product Specification
Spec. No. : C579F3
Issued Date : 2011.10.21
Revised Date : 2015.09.03
Page No. : 9/9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
B
D
2
F
α1
2
1
E
C
A
Device Name
3607
Date Code
□□□□
Style : Pin 1.Gate
2.Drain
α2
3
I
G
J
K
L
α3
3.Source
H
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3607F3
CYStek Product Specification