Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 1/ 8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB20N06FP BVDSS ID @ VGS=10V, TC=25°C 60V RDSON(TYP) @ VGS=10V, ID=20A 27A 18.3mΩ RDSON(TYP) @ VGS=4.5V, ID=20A 21.7mΩ Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol Outline MTB20N06FP TO-220FP G：Gate D：Drain S：Source G D S Ordering Information Device MTB20N06FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB20N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Avalanche Current Avalanche Energy @ L=1mH, ID=17A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH TC=25°C Power Dissipation TC=100°C TA=25°C Power Dissipation TA=70°C Operating Junction and Storage Temperature Symbol Limits VDS VGS 60 ±20 27 19 108 ID IDM (Note 3) (Note 2) (Note 2) (Note 3) (Note 2) (Note 3) IDSM IAS EAS EAR (Note 1) PD (Note 1) (Note 2) (Note 2) PDSM Tj, Tstg 6.7 5.4 17 144.5 4 37.5 18.7 2 1.3 -55~+175 Unit V A mJ W W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max, t≤10s Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c (Note 2) (Note 2) Rth,j-a Value 4 15 62.5 Unit °C/W °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. . 3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTB20N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 3/ 8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 60 1.0 - 0.06 25 18.3 21.7 2.5 ±100 1 5 23 28.5 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20V VDS =48V, VGS =0V VDS =48V, VGS =0V, Tj=55°C VGS =10V, ID=20A VGS =4.5V, ID=10A 20.4 1.3 13.5 10 15 28.6 7.8 1096 87 44 2.7 - 0.71 13 7.8 27 108 1 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ nC VDS=48V, ID=27A, VGS=10V ns VDS=30V, ID=27A, VGS=10V, RG=3.3Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz A V ns nC IS=1A, VGS=0V VGS=0V, IF=27A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTB20N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 4/ 8 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V ID, Drain Current (A) 90 80 70 60 BVDSS, Normalized Drain-Source Breakdown Voltage 100 VGS=5V VGS=4.5V 50 40 VGS=4V 30 20 VGS=3.5V 10 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 1 2 3 4 5 6 7 8 VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 90 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 80 70 60 50 VGS=4.5V VGS=10V 40 30 20 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 10 0.2 0 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 2.8 ID=20A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 100 80 60 40 20 2.4 VGS=4.5V, ID=20A RDS(ON) @Tj=25°C : 21.5mΩ typ. 2 1.6 1.2 0.8 VGS=10V, ID=20A 0.4 RDS(ON) @Tj=25°C : 18.3mΩ typ. 0 0 0 MTB20N06FP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 5/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 I D=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=5V 0.1 Ta=25°C Pulsed 0.01 0.001 VDS=48V ID=27A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 8 12 16 Qg, Total Gate Charge(nC) 20 24 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 35 RDSON Limited 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 4 100μ s 1ms 10 10ms 1 TC=25°C, Tj=175°C VGS=10V, RθJC=4°C/W Single Pulse 0.1 100ms 1s DC 30 25 20 15 10 5 VGS=10V, RθJC=4°C/W 0 0.01 0.1 MTB20N06FP 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 6/ 8 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 3000 100 90 VDS=10V 2500 TJ(MAX) =175°C TC=25°C θ JC=4°C/W 70 Power (W) ID, Drain Current(A) 80 60 50 40 2000 1500 1000 30 20 500 10 0 0 2 4 6 VGS, Gate-Source Voltage(V) 8 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=4 ° C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-05 MTB20N06FP 1.E-04 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 7/ 8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB20N06FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C132FP Issued Date : 2015.05.04 Revised Date : Page No. : 8/ 8 TO-220FP Dimension Marking: Device Name B20 N06 Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB20N06FP CYStek Product Specification