Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET MTP658G6 BVDSS ID RDSON@VGS=-10V, ID=-5A RDSON@VGS=-4.5V, ID=-3.7A RDSON@VGS=-4V, ID=-3A RDSON@VGS=-3V, ID=-1.5A -30V -5.2A 39mΩ(typ.) 61mΩ(typ.) 69mΩ(typ.) 116mΩ(typ.) Description The MTP658G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating package MTP658G6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @VGS=-4.5V, TA=25 °C (Note 1) ID -5.2 A Continuous Drain Current @ VGS=-4.5V, TA=70 °C (Note 1) ID -4.2 A Pulsed Drain Current (Note 2, 3) IDM -30 A Total Power Dissipation @ TA=25 °C Linear Derating Factor Pd 1.6 W 0.013 W / °C Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 78 Thermal Resistance, Junction-to-Case RθJC 25 Operating Junction and Storage Temperature Range °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% MTP658G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 2/9 Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) *GFS Min. Typ. Max. Unit -30 -1 - -0.02 -1.6 39 61 69 116 6.2 3.3 -2.5 ±100 -1 -10 50 75 85 150 - V V/℃ V nA 829 85 69 17 12 24 12 10 2.6 4.9 - -0.77 28 22 -2 -8 -1.2 - Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source Drain Diode *IS *ISM *VSD *Trr Qrr - Test Conditions S S VGS=0V, ID=-250μA Reference to 25℃, ID=-1mA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, Tj=55℃ ID=-5A, VGS=-10V ID=-3.7A, VGS=-4.5V ID=-3A, VGS=-4V ID=-1.5A, VGS=-3V VDS=-5V, ID=-4A VDS=-10V, ID=-1.75A pF VDS=-15V, VGS=0, f=1MHz ns VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-24V, ID=-5A, VGS=-5V μA mΩ A V ns nC IS=-1.7A,VGS=0V IS=-1.7A,VGS=0V,dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTP658G6-0-T1-G MTP658G6 Package TSOP-6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 3/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 30 10V 9V 8V 7V 6V 20 -BVDSS, Normalized Drain-Source Breakdown Voltage -ID, Drain Current (A) 25 -VGS=5V -VGS=4V 15 10 -VGS=3V 5 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=-3V -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-4V 100 VGS=-4.5V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 VGS=-10V 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 200 4 6 8 -IDR, Reverse Drain Current (A) 10 R DS(ON) , Normalized Static DrainSource On-State Resistance 2 180 ID=-5A 160 140 120 100 80 60 40 20 1.8 VGS=-10V, ID=-5A 1.6 1.4 1.2 1 0.8 RDSON @Tj=25°C: 39mΩ 0.6 0.4 0 0 MTP658G6 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 ID=-250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 60 80 100 120 140 160 10 VDS=-24V VDS=-5V 1 VDS=-10V 0.1 Pulsed Ta=25°C 8 VDS=-15V VDS=-5V 6 4 2 ID=-5A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 Maximum Safe Operating Area 4 8 12 16 Qg, Total Gate Charge(nC) 20 Maximum Drain Current vs JunctionTemperature 100 RDS(ON) Limit 10 1ms 10ms 1 100ms 1s TA=25°C, Tj=150°C RθJA=78°C/W, VGS=-10V Single Pulse 0.1 DC 0.01 ID, Maximum Drain Current(A) 6 100μs -ID, Drain Current (A) 20 40 Gate Charge Characteristics 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance-(S) Forward Transfer Admittance vs Drain Current 5 4 3 2 1 TA=25°C, VGS=-10V, RθJA=78°C/W 0 0.01 MTP658G6 0 Tj, Junction Temperature(°C) 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 1.8 30 1.6 VDS=10V PD, Power Dissipation(W) -ID, Drain Current(A) 25 20 15 10 5 Mounted on FR-4 board with 1 in² pad area 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0 2 4 6 -VGS, Gate-Source Voltage(V) 0 8 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTP658G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 6/9 Reel Dimension MTP658G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 7/9 Carrier Tape Dimension MTP658G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP658G6 CYStek Product Specification Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TSOP-6 Dimension Marking: Style: Pin 1. Drain Pin 2. Drain Pin 3. Gate Pin 4. Source Pin 5. Drain Pin 6. Drain ● (D) (D) (G) (S) (D) (D) 658 □□□□ Device Name Date Code 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Inches Min. Max. 0.1063 0.1220 0.1024 0.1181 0.0551 0.0709 0.0748 REF 0.0374 REF 0.0374 REF 0.0118 0.0197 0.0276 0.0394 DIM A B C D d1 d2 E F Millimeters Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.90 REF 0.95 REF 0.95 REF 0.30 0.50 0.70 1.00 DIM G H I J K L M Inches Min. Max. 0 0.0039 0.0098 0.0047 REF 0.0177 REF 0.0236 REF 0° 10° 0.0433 Millimeters Min. Max. 0 0.10 0.25 0.12 REF 0.45 REF 0.60 REF 0° 10° 1.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP658G6 CYStek Product Specification