CYSTEKEC MTP658G6

Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
MTP658G6
BVDSS
ID
[email protected]=-10V, ID=-5A
[email protected]=-4.5V, ID=-3.7A
[email protected]=-4V, ID=-3A
[email protected]=-3V, ID=-1.5A
-30V
-5.2A
39mΩ(typ.)
61mΩ(typ.)
69mΩ(typ.)
116mΩ(typ.)
Description
The MTP658G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Equivalent Circuit
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating package
MTP658G6
G:Gate S:Source D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @VGS=-4.5V, TA=25 °C (Note 1)
ID
-5.2
A
Continuous Drain Current @ VGS=-4.5V, TA=70 °C (Note 1)
ID
-4.2
A
Pulsed Drain Current (Note 2, 3)
IDM
-30
A
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
1.6
W
0.013
W / °C
Tj ; Tstg
-55~+150
°C
Thermal Resistance, Junction-to-Ambient (Note 1)
RθJA
78
Thermal Resistance, Junction-to-Case
RθJC
25
Operating Junction and Storage Temperature Range
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
MTP658G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 2/9
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Min.
Typ.
Max.
Unit
-30
-1
-
-0.02
-1.6
39
61
69
116
6.2
3.3
-2.5
±100
-1
-10
50
75
85
150
-
V
V/℃
V
nA
829
85
69
17
12
24
12
10
2.6
4.9
-
-0.77
28
22
-2
-8
-1.2
-
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source Drain Diode
*IS
*ISM
*VSD
*Trr
Qrr
-
Test Conditions
S
S
VGS=0V, ID=-250μA
Reference to 25℃, ID=-1mA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, Tj=55℃
ID=-5A, VGS=-10V
ID=-3.7A, VGS=-4.5V
ID=-3A, VGS=-4V
ID=-1.5A, VGS=-3V
VDS=-5V, ID=-4A
VDS=-10V, ID=-1.75A
pF
VDS=-15V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-24V, ID=-5A, VGS=-5V
μA
mΩ
A
V
ns
nC
IS=-1.7A,VGS=0V
IS=-1.7A,VGS=0V,dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTP658G6-0-T1-G
MTP658G6
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 3/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
10V
9V
8V
7V
6V
20
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
25
-VGS=5V
-VGS=4V
15
10
-VGS=3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
1
2
3
4
-VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-3V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4V
100
VGS=-4.5V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=-10V
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
200
4
6
8
-IDR, Reverse Drain Current (A)
10
R DS(ON) , Normalized Static DrainSource On-State Resistance
2
180
ID=-5A
160
140
120
100
80
60
40
20
1.8
VGS=-10V, ID=-5A
1.6
1.4
1.2
1
0.8
RDSON @Tj=25°C: 39mΩ
0.6
0.4
0
0
MTP658G6
2
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
1.4
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
10
VDS=-24V
VDS=-5V
1
VDS=-10V
0.1
Pulsed
Ta=25°C
8
VDS=-15V
VDS=-5V
6
4
2
ID=-5A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
Maximum Safe Operating Area
4
8
12
16
Qg, Total Gate Charge(nC)
20
Maximum Drain Current vs JunctionTemperature
100
RDS(ON)
Limit
10
1ms
10ms
1
100ms
1s
TA=25°C, Tj=150°C
RθJA=78°C/W, VGS=-10V
Single Pulse
0.1
DC
0.01
ID, Maximum Drain Current(A)
6
100μs
-ID, Drain Current (A)
20 40
Gate Charge Characteristics
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance-(S)
Forward Transfer Admittance vs Drain Current
5
4
3
2
1
TA=25°C, VGS=-10V, RθJA=78°C/W
0
0.01
MTP658G6
0
Tj, Junction Temperature(°C)
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
1.8
30
1.6
VDS=10V
PD, Power Dissipation(W)
-ID, Drain Current(A)
25
20
15
10
5
Mounted on FR-4 board
with 1 in² pad area
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0
2
4
6
-VGS, Gate-Source Voltage(V)
0
8
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78 °C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP658G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 6/9
Reel Dimension
MTP658G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTP658G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP658G6
CYStek Product Specification
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TSOP-6 Dimension
Marking:
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
Pin 4. Source
Pin 5. Drain
Pin 6. Drain
●
(D)
(D)
(G)
(S)
(D)
(D)
658
□□□□
Device Name
Date Code
6-Lead TSOP-6 Plastic
Surface Mounted Package
CYStek Package Code: G6
Inches
Min.
Max.
0.1063
0.1220
0.1024
0.1181
0.0551
0.0709
0.0748 REF
0.0374 REF
0.0374 REF
0.0118
0.0197
0.0276
0.0394
DIM
A
B
C
D
d1
d2
E
F
Millimeters
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.90 REF
0.95 REF
0.95 REF
0.30
0.50
0.70
1.00
DIM
G
H
I
J
K
L
M
Inches
Min.
Max.
0
0.0039
0.0098
0.0047 REF
0.0177 REF
0.0236 REF
0°
10°
0.0433
Millimeters
Min.
Max.
0
0.10
0.25
0.12 REF
0.45 REF
0.60 REF
0°
10°
1.10
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP658G6
CYStek Product Specification