STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 1 2 Order code VDS RDS(on)max STP110N8F6 80 V 0.0065 Ω ID PTOT 110 A 200 W • Very low on-resistance 3 • Very low gate charge TO-220 • High avalanche ruggedness • Low gate drive power loss Applications Figure 1. Internal schematic diagram • Switching applications Description '7$% This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. * 6 $0Y Table 1. Device summary Order code Marking Package Packing STP110N8F6 110N8F6 TO-220 Tube December 2014 This is information on a product in full production. DocID026831 Rev 2 1/13 www.st.com Contents STP110N8F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 5 2/13 .............................................. 8 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 DocID026831 Rev 2 STP110N8F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 110 A ID Drain current (continuous) at TC = 100 °C 85 A Drain current (pulsed) 440 A Total dissipation at TC = 25 °C 200 W EAS Single pulse avalanche energy 180 mJ TJ Operating junction temperature Tstg Storage temperature IDM (1) PTOT (2) °C -55 to 175 °C 1. Pulse width is limited by safe operating area 2. Starting TJ = 25 °C, ID = 55 A, VDD = 60 V Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.75 °C/W Rthj-amb Thermal resistance junction-ambient max. 62.5 °C/W DocID026831 Rev 2 3/13 13 Electrical characteristics 2 STP110N8F6 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On/off-state Symbol Parameter V(BR)DSS Drain-source breakdown voltage IDSS Zero-gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. 80 Unit V VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TC = 125 °C 100 µA VDS = 0, VGS = +20 V 100 nA 4.5 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance 2.5 VGS = 10 V, ID = 55 A 0.0056 0.0065 Ω Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 40 V, f = 1 MHz, VGS = 0 VDD = 40 V, ID = 110 A, VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 9130 - pF - 320 - pF - 225 - pF - 150 - nC - 40 - nC - 30 - nC Min. Typ. Max. Unit - 24 - ns - 61 - ns - 162 - ns - 48 - ns Table 6. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 40 V, ID = 55 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) Fall time DocID026831 Rev 2 STP110N8F6 Electrical characteristics Table 7. Source-drain diode Symbol VSD(1) trr Parameter Test conditions Forward on voltage ISD = 110 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 110 A, di/dt = 100 A/µs VDD = 64 V (see Figure 15) Min. Typ. - Max. Unit 1.2 V - 30 ns - 34 nC - 2.3 A 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026831 Rev 2 5/13 13 Electrical characteristics 2.1 STP110N8F6 Electrical characteristics (curves) Figure 2. Safe operating area ,' $ Figure 3. Thermal impedance *,3*/0 . *,3*/0 į LV V 6 RQ 2 S /L HU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D ' V PV 6LQJOHSXOVH 7M & 7F & 6LQJOHSXOVH 9'69 Figure 4. Output characteristics ,' $ 9*6 9 9 WSV *,3*/0 9'6 9 9 *,3*/0 9*6 9 9'69 Figure 6. Gate charge vs gate-source 6/13 ,' $ 9'' 9 ,' $ 4JQ& 9*69 9*6 9 *,3*/0 5'6RQ Pȍ Figure 7. Static drain-source on-resistance Figure 5. Transfer characteristics *,3*/0 DocID026831 Rev 2 ,'$ STP110N8F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature *,3*/0 & S) *,3*/0 9*6WK QRUP ,' $ &LVV &RVV &UVV 9'69 Figure 10. Normalized on-resistance *,3*/0 5'6RQ 7-& Figure 11. Normalized V(BR)DSS vs temperature *,3*/0 9%5'66 QRUP QRUP 9*6 9 ,' P$ 7-& 7-& Figure 12. Drain-source diode forward characteristics *,3*/0 96' 9 7- & 7- & 7- & ,6'$ DocID026831 Rev 2 7/13 13 Test circuits 3 STP110N8F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID026831 Rev 2 10% AM01473v1 STP110N8F6 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026831 Rev 2 9/13 13 Package information 4.1 STP110N8F6 TO-220 package information Figure 19. TO-220 type A outline BW\SH$B5HYB7 10/13 DocID026831 Rev 2 STP110N8F6 Package information Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026831 Rev 2 11/13 13 Revision history 5 STP110N8F6 Revision history Table 9. Document revision history Date Revision 26-Sep-2014 1 First release. 2 Updated in cover page the title and features. Product status promoted from preliminary to production data. Updated EAS parameter in Table 2 and RDS(on) in Table 4. Updated Table 5, Table 6 and Table 7. Inserted Section 2.1. 05-Dec-2014 12/13 Changes DocID026831 Rev 2 STP110N8F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID026831 Rev 2 13/13 13