TECHNICAL DATA SL1001 Audio Frequency Power Amplifier SOT-223 Features SL1001 ● Low Speed Switching Emitter Collector Base 1 2 3 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current (DC) IC *Collector Current (Pulse) ICP Base Current (DC) IB PC Collector Dissipation (TC=25°C) Junction to Ambient Rθja Junction to Case Rθjc Junction Temperature TJ Storage Temperature TSTG * PW≤10ms, Duty Cycle≤50% Value - 40 - 30 -5 -3 -7 - 0.6 10 132 13.5 150 - 55 ~ 150 Units V V V A A A W °C/W °C/W °C °C * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Electrical Characteristics Tc=25°C unless otherwise noted Characteristics DC Current Gain (1), (2) DC Current Gain (1), (2) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage (1) Symbol hFE hFE Icbo Icbo Iebo Iebo Base-Emitter Saturation Voltage (1) Vbe (sat) Vce (sat) Unit μA μA μA μA Measurement Mode Vce =2V, Ic =20mA Vce = 2V, Ic = 1A Vcb = 30V, Ie = 0 Vcb = 40V, Ie = 0 Veb = 3V, Ic = 0 Veb = 5V, Ic = 0 Ic = 2 A, Ib = 0.2 A Min 30 60 Max 400 1.0 100 1.0 100 0.5 Ic = 0.8 A, Ib = 0.02 A 0.1 Ic = 2 A, Ib = 0.2 A 2.0 (1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2% (2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic 2011, February, Rev. 01 SL1001 2011, February, Rev. 01 SL1001 2011, February, Rev. 01 SL1001 2011, February, Rev. 01 SL1001 SOT-223 2011, February, Rev. 01