ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. APPLICATIONS Low On-Resistance Fast Switching Speed Low-voltage drive Easily designed drive circuits Pb-Free Package is available. The suffix G means Pb-free package ESD Protected：2000V Packaging Type Ordering information SOT-363 6 5 4 D1 G2 S2 ACE4922BEM+ H Halogen - free Pb - free EM : SOT-363 S1 G1 D2 1 2 3 VER 1.1 1 ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous ID 115 Pulsed IDP*1 800 Continuous IDR 115 Pulsed IDR*1 800 Total Power Dissipation Pd*2 225 Channel Temperature Tch 150 O C -55 to150 O C Drain Current Reverse Drain Current Storage Temperature Range Note: 1. 2. Tstg mA mA mW Pw≦10µs, Duty cycle≦1 %。 When mounted on a 1*0.75*0.062 inch glass epoxy board。 Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS(Note 2) Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1.0 uA Gate-source Leakage IGSS VGS=±20V, VDS=0V ON CHARACTERISTICS(Note 2) ±10 nA 2.5 V Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward transfer admittance gFS VDS=VGS , ID= 250uA V 60 1.0 1.85 VGS=10V, ID=0.5A 7.5 VGS=5V, ID=0.05A 7.5 VDS=10V, ID=0.2A Ω S 80 DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V VGS=0V f=1.0MHz 25 50 10 25 3.0 5.0 12 20 20 30 pF SWITCHING CHARACTERISTICS Turn-On Delay Time Td(on) Turn-Off Delay Time Td(off) ID=0.2A,VDD=30V, VGS=10V,RL=150Ω,RG=10Ω ns Note: Pw ≦ 300 µs, Duty cycle ≦ 1% VER 1.1 2 ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics Fig.1 Static drain-source on-state resistance VS drain current (Ⅰ) Fig.2 Static drain-source on-state resistance VS drain current (Ⅱ) Fig.3 Static drain-source on-state Fig.4 Static drain-source on-state resistance VS gate-source voltage resistance VS channel temperature Fig.5 Reverse drain current VS Fig.6 Reverse drain current VS source-drain voltage (Ⅰ) source-drain voltage (Ⅱ) VER 1.1 3 ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Fig.7 Forward transfer admittance Fig.8 Typical capacitance VS VS drain current drain-source voltage Fig.9 Switching characteristics Electrical characteristic curves Fig.10 Typical output characteristics Fig.12 Get threshold voltage VS channel temperature Fig.11 Typical transfer characteristics VER 1.1 4 ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-363 A N DIM G 5 4 −B− S 1 2 3 K D 6 PL MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026 BSC H 0.2 (0.008) M ○ M B○ 0.65 BSC 0.004 0.10 J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N C MILLIMETERS MIN J 6 INCHES S 0.008 REF 0.079 0.087 0.20 REF 2.00 2.20 0.05 0.0197 H SOLDERING FOOTRPINT 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches VER 1.1 5 ACE4922BEM Dual N-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6