ACE ACE7401CM+H

 Technology
ACE7401
P-Channel Enhancement Mode MOSFET
Description
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss are needed in
a very small outline surface mount package.
Features
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-30V/-2.8A, RDS(ON)[email protected]=-10V
-30V/-2.5A, RDS(ON)[email protected]=-4.5V
-30V/-1.5A, RDS(ON)[email protected]=-2.5V
-30V/-1.0A, RDS(ON)[email protected]=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol Max Unit
VDSS
-30
V
VGSS
±12
V
TA=25℃
-2.8
Continuous Drain Current (TJ=150℃)
A
ID
TA=70℃
-2.1
Pulsed Drain Current
IDM
-8
A
Continuous Source Current (Diode Conduction)
IS
-1.4
A
TA=25℃
0.33
Power Dissipation
W
PD
TA=70℃
0.21
Operating Junction Temperature
TJ
-55/150 OC
Storage Temperature Range
TSTG -55/150 OC
Thermal Resistance-Junction to Ambient
RθJA
105 OC/W
VER 1.2
1 Technology
ACE7401
P-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
Pin Symbol Description
1
G
Gate
2
S
Source
3
D
Drain
1
2
Ordering information
Selection Guide
ACE7401 XX + H
Halogen - free
Pb - free
CM : SOT-323
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-30
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-250uA
-0.4
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
Zero Gate Voltage Drain
Current
IDSS
VDS=-24V, VGS=0V
-1
VDS=-24V, VGS=0V TJ=85℃
-5
On-State Drain Current
ID(ON)
VDS=-5V, VGS=-4.5V
Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-2.8A
0.105
0.115
VGS=-4.5V, ID=-2.5A
0.125
0.135
V
-1.0
-4
nA
uA
A
VER 1.2
Ω
2
Technology
ACE7401
P-Channel Enhancement Mode MOSFET
VGS=-2.5V, ID=-1.5A
0.155
0.170
VGS=-1.8V, ID=-1.0A
0.210
0.240
Forward Transconductance
Gfs
VDS=-10V,ID=-2.8A
4
Diode Forward Voltage
VSD
IS=-1.2A, VGS=0V
-0.8
S
-1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.5
Input Capacitance
Ciss
380
Output Capacitance
Coss
Reverse Transfer
Capacitance
Crss
Turn-On Time
Turn-Off Time
5.8
VDS=-15V, VGS=-4.5V, ID=-2.0A
VDS=-15V, VGS=0V, f=1MHz
td(off)
55
pF
40
td(on)
tr
nC
0.8
6
VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V,
RG=3Ω
3.9
nS
40
15
tf
Typical Performance Characteristics
Output Characteristics
VDS-Drain-to-Source Voltage (V)
Transfer Characteristics
VGS-Gate-to-Source Voltage (V)
VER 1.2
3
Technology
On-Resistance vs. Drain Current
ID-Drain Current (A)
Gate Charge
Qg-Total Gate Charge (nC)
ACE7401
P-Channel Enhancement Mode MOSFET
Capacitance
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
TJ-Junction Temperature (℃)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
VGS-Gate-to-Source Voltage (V)
VER 1.2
4
Technology
Threshold Voltage
TJ-Temperature(℃)
ACE7401
P-Channel Enhancement Mode MOSFET
Single Pulse Power
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
VER 1.2
5
Technology
ACE7401
P-Channel Enhancement Mode MOSFET
Packing Information
SOT-323
VER 1.2
6
Technology
ACE7401
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
7