ACE1551A

ACE1551A
N-Channel Enhancement Mode MOSFET
Description
The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high density process is especially tailored to minimize
on-state resistance and provide superior switching performance. These devices are particularly suited for
low voltage applications such as notebook computer power management and other battery powered
circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
Features



N-Channel
20V/0.95A,RDS(ON)[email protected]=4.5V
20V/0.75A,RDS(ON)[email protected]=2.5V
20V/0.65A,RDS(ON)[email protected]=1.8V
20V/0.65A,RDS(ON)[email protected]=1.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Applications







Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
ID
0.65
A
Pulsed Drain Current
IDM
4
A
Continuous Source Current (Diode Conduction)
IS
0.3
A
PD
0.15
Continuous Drain Current (TJ=150℃)
Power Dissipation
TA=25℃
TA=25℃
Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150
W
O
C
VER 1.2
1
ACE1551A
N-Channel Enhancement Mode MOSFET
Packaging Type
SOT-723
D
D
G
G
S
S
Ordering information
ACE1551A XX + H
Halogen - free
Pb - free
JM : SOT-723
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.35
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
30
Zero Gate Voltage Drain
Current
IDSS
VDS=20V, VGS=0V
1
VDS=20V, VGS=0V, TJ=55℃
5
On-State Drain Current
ID(on)
Drain-Source
On-Resistance
RDS(ON)
VDS≥ 4.5V,VGS =5V
V
1.0
0.7
uA
uA
A
VGS=4.5V, ID=0.95A
0.26
0.38
VGS=2.5V, ID=0.75A
0.32
0.45
VGS=1.8V, ID=0.65A
0.42
0.8
VGS=1.5V, ID=0.65A
0.5
1.0
Forward Transconductance
gfs
VDS=10V,ID=0.4A
1.0
Diode Forward Voltage
VSD
ISD=0.15A, VGS=0V
0.8
1.2
1.2
1.5
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS=10V, VGS=4.5V, ID=0.6A
0.2
VER 1.2
nC
2
ACE1551A
N-Channel Enhancement Mode MOSFET
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qgd
0.3
td(on)
5
10
8
15
10
18
1.2
2.8
tr
td(off)
tf
VGEN=4.5V, ID=0.5A, VDD=10V,
RG=6Ω, RL=10Ω
nS
Typical Performance Characteristics
VER 1.2
3
ACE1551A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
4
ACE1551A
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
5
ACE1551A
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-723
VER 1.2
6
ACE1551A
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
7