ACE ACE7401_12

ACE7401
P-Channel Enhancement Mode MOSFET
Description
The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low in-line power loss are needed in
a very small outline surface mount package.
Features
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-30V/-2.8A, RDS(ON)[email protected]=-10V
-30V/-2.5A, RDS(ON)[email protected]=-4.5V
-30V/-1.5A, RDS(ON)[email protected]=-2.5V
-30V/-1.0A, RDS(ON)[email protected]=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-2.8
A
-2.1
Pulsed Drain Current
IDM
-8
A
Continuous Source Current (Diode Conduction)
IS
-1.4
A
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
PD
TJ
TSTG
RθJA
0.33
W
0.21
-55/150
O
C
-55/150
O
C
105
O
C/W
VER 1.3
1
ACE7401
P-Channel Enhancement Mode MOSFET
Packaging Type
SOT-323
3
SOT-323 Description
1
1
Gate
2
Source
3
Drain
2
Ordering information
ACE7401 XX + H
Halogen - free
Pb - free
CM : SOT-323
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS=0V, ID=-250uA
-30
VGS(th)
VDS=VGS, ID=-250uA
-0.4
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
Zero Gate Voltage Drain
Current
IDSS
VDS=-24V, VGS=0V
-1
VDS=-24V, VGS=0V TJ=85℃
-5
On-State Drain Current
ID(ON)
Drain-Source
On-Resistance
RDS(ON)
VDS=-5V, VGS=-4.5V
V
-1.0
-4
nA
uA
A
VGS=-10V, ID=-2.8A
0.105 0.115
VGS=-4.5V, ID=-2.5A
0.125 0.135
VGS=-2.5V, ID=-1.5A
0.155 0.170
VGS=-1.8V, ID=-1.0A
0.210 0.240
Forward
Transconductance
Gfs
VDS=-10V,ID=-2.8A
4
Diode Forward Voltage
VSD
IS=-1.2A, VGS=0V
-0.8
Ω
S
-1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS=-15V, VGS=-4.5V, ID=-2.0A
5.8
nC
0.8
VER 1.3
2
ACE7401
P-Channel Enhancement Mode MOSFET
Gate-Drain Charge
Qgd
1.5
Input Capacitance
Ciss
380
Output Capacitance
Reverse Transfer
Capacitance
Coss
Turn-On Time
Turn-Off Time
VDS=-15V, VGS=0V, f=1MHz
55
Crss
40
td(on)
6
tr
td(off)
VDD=-15V, RL=15Ω, ID=-1.0A,
VGEN=-10V, RG=3Ω
tf
pF
3.9
nS
40
15
Typical Performance Characteristics
Output Characteristics
Transfer Characteristics
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
ID-Drain Current (A)
V DS-Drain-to-Source Voltage (V)
VER 1.3
3
ACE7401
P-Channel Enhancement Mode MOSFET
Gate Charge
On-Resistance vs. Junction Temperature
Qg-Total Gate Charge (nC)
TJ-Junction Temperature (℃)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
TJ-Temperature(℃)
VGS-Gate-to-Source Voltage (V)
Single Pulse Power
Time (sec)
VER 1.3
4
ACE7401
P-Channel Enhancement Mode MOSFET
Normalized Thermal Transient Impedance, Junction-to Foot
VER 1.3
5
ACE7401
P-Channel Enhancement Mode MOSFET
Packing Information
SOT-323
VER 1.3
6
ACE7401
P-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
7