ACE4922

ACE4922
Dual N-Channel Enhancement Mode MOSFET
Description
The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.
Features
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N-Channel
20V/0.95A, RDS(ON)[email protected]=4.5V
20V/0.75A, RDS(ON)[email protected]=2.5V
20V/0.65A, RDS(ON)[email protected]=1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application




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
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Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=80℃
ID
1.2
0.9
A
Pulsed Drain Current
IDM
4
A
Continuous Source Current (Diode Conduction)
IS
0.6
A
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
PD
TJ
TSTG
0.35
0.19
W
-55/150
O
C
-55/150
O
C
VER 1.3
1
ACE4922
Dual N-Channel Enhancement Mode MOSFET
Packaging Type
SC-70-6
SC-70-6 Description
1
Source 1
2
Gate 1
3
Drain 2
4
Source 2
5
Gate 2
3
6
Drain 1
N-Channel
N-Channel
6
1
5
2
4
Ordering information
ACE4922 XX + H
Halogen - free
Pb - free
HM : SC-70-6
VER 1.3
2
ACE4922
Dual N-Channel Enhancement Mode MOSFET
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
Gate Threshold Voltage
VGS(th)
VD=VGS, ID=250uA
0.35
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
100
Zero Gate Voltage Drain
Current
IDSS
VDS=20V, VGS=0V
1
VDS=20V, VGS=0V TJ=55℃
5
On-State Drain Current
ID(ON)
VDS≧4.5V, VGS=5V
V
1.0
0.7
0.26
0.38
VGS=2.5V, ID=0.75A
0.32
0.45
VGS=1.8V, ID=0.65A
0.42
0.80
gfs
VDS=10V,ID=0.4A
1.0
VSD
IS=0.15A, VGS=0V
0.8
1.2
1.2
1.5
RDS(ON)
Forward Transconductance
Diode Forward Voltage
uA
A
VGS=4.5V, ID=0.95A
Drain-Source
On-Resistance
nA
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.3
td(on)
5
10
8
15
10
18
1.2
2.8
Turn-On Time
Turn-Off Time
tr
td(off)
tf
VDS=10V, VGS=4.5V, ID=0.6A
VDD=10V, RL=10Ω, ID=0.5A,
VGEN=4.5V, RG=6Ω
0.2
nC
VER 1.3
nS
3
ACE4922
Dual N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Output Characteristics
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
ID-Drain Current (A)
Gate Charge
Qg-Total Gate Charge (nC)
Transfer Characteristics
VGS-Gate-to-Source Voltage (V)
Capacitance
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
TJ-Junction Temperature (℃)
VER 1.3
4
ACE4922
Dual N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
Source-Drain Diode Forward Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
V GS-Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
TJ-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
VER 1.3
5
ACE4922
Dual N-Channel Enhancement Mode MOSFET
Packing Information
SC-70-6
VER 1.3
6
ACE4922
Dual N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3
7