Datasheet

AO4702
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
The AO4702 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. A Schottky Diode is
packaged in parallel to improve device performance in
synchronous recitification applications, or H-bridge
configurations. Standard Product AO4702 is Pb-free (meets
ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 11A (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 25mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<[email protected]
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S
S
S
G
D
D
D
D
D
K
S
A
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
MOSFET
V
DS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain Current AF
Pulsed Drain Current
ID
TA=70°C
IDM
B
TA=25°C
Continuous Forward Current AF
Pulsed Diode Forward Current
TA=25°C
Power Dissipation
Avalanche Current B
9.3
A
50
IFM
B
PD
TA=70°C
Repetitive avalanche energy 0.3mH
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
V
IF
TA=70°C
Units
±20
11
VKA
Schottky reverse voltage
Schottky
30
4.4
V
3.2
A
3
30
3
2
2
W
IAR
17
A
EAR
43
mJ
TJ, TSTG
-55 to 150
-55 to 150
°C
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AO4702
Thermal Characteristics: MOSFET
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Thermal Characteristics: Schottky
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Typ
36
67
25
Max
40
75
30
Units
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 6 : Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Typ
Max
VR=30V
VR=30V, TJ=125°C
0.007
0.05
3.2
10
mA
VR=30V, TJ=150°C
12
20
100
nA
1.8
3
V
13.4
16
16.8
21
20
25
mΩ
0.5
V
5
A
1250
pF
Conditions
ID=250µA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
(Set by Schottky leakage)
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
VGS=10V, ID=11A
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
V
A
VGS=4.5V, ID=8A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode + Schottky Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
IS
VDS=5V, ID=11A
25
Coss
Output Capacitance (FET+Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
1040
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=11A
VGS=10V, VDS=15V, RL=1.35Ω,
RGEN=3Ω
212
0.35
mΩ
S
0.45
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
pF
121
170
pF
0.7
0.85
Ω
19.8
24
nC
9.8
12
nC
2.5
nC
3.5
nC
4.5
7
ns
3.9
7
ns
17.4
30
ns
tf
Turn-Off Fall Time
3.2
5.7
ns
trr
Body Diode + Schottky Reverse Recovery Time
IF=11A, dI/dt=100A/µs
19
23
Body Diode + Schottky Reverse Recovery Charge
IF=11A, dI/dt=100A/µs
9
11
ns
nC
Qrr
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev 6 : Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
4V
10V
25
3.5V
20
12
ID(A)
ID (A)
VDS=5V
16
4.5V
15
125°C
8
10
VGS=3V
25°C
4
5
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
24
1.6
Normalized On-Resistance
VGS=10V
22
VGS=4.5V
20
RDS(ON) (mΩ)
2.5
18
16
14
VGS=10V
12
ID=11A
1.4
1.2
VGS=4.5V
1
10
0
5
10
15
0.8
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
50
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
ID=11A
40
25°
1.0E-01
1.0E-02
30
125°C
FET+SCHOTTKY
1.0E-03
20
25°C
1.0E-04
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=11A
1250
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1000
750
500
250
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
50
RDS(ON)
limited
100µs
Power (W)
10ms
0.1s
1s
1.0
TJ(Max)=150°C
TA=25°C
DC
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
30
30
20
10
10s
0.1
0.1
25
TJ(Max)=150°C
TA=25°C
40
10µs
1ms
10.0
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
ID (Amps)
Crss
0
0
ZθJA Normalized Transient
Thermal Resistance
Coss FET+SCHOTTKY
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01
0.00001
Single Pulse
0.0001
Ton
T
Pulse 0.1
Width (s)
0.001
0.01
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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