10 xY07NPA150SM02 L365F08x D4 14

10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
flow NPC 1
650 V / 150 A
Features
flow 1 12mm housing
● NPC inverter topology
● Optimized for full rated bi-directional usage
(4 quadrant operation)
● High-speed IGBT in all switch positions
● NTC
● Low inductive design with integrated DC capacitor
● flow 1 12mm package
Solder Pin
Press-fit
Schematic
Target applications
● Solar inverter
● UPS
Types
● 10-FY07NPA150SM02-L365F08
● 10-PY07NPA150SM02-L365F08Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
83
A
450
A
128
W
Buck Switch\ Out. Boost Switch
Collector-emitter voltage
Collector current
V CES
IC
T j = T jmax
T S =80 °C
Repetitive peak collector current
I CRM
t p limited by T jmax
Total power dissipation
P tot
T j = T jmax
Gate-emitter voltage
V GES
±20
V
Maximum Junction Temperature
T jmax
175
°C
Copyright Vincotech
1
T S =80 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Parameter
Conditions
Symbol
Value
Unit
650
V
87
A
300
A
113
W
175
°C
Value
Unit
650
V
106
A
300
A
149
W
175
°C
Value
Unit
V MAX
500
V
T op
-55…+125
°C
Value
Unit
Buck Diode\ Out. Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T j = T jmax
T S = 80°C
T j = T jmax
T S = 80°C
Conditions
Symbol
Out. Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
V RRM
IF
Repetitive peak forward current
I FRM
Total power dissipation
P tot
Maximum Junction Temperature
T jmax
Parameter
T s = 80°C
T j = T jmax
T j = T jmax
T s = 80°C
Conditions
Symbol
DC Link Capacitor
Maximum DC voltage
Operation Temperature
Parameter
Symbol
Conditions
Module Properties
Thermal Properties
Storage temperature
T stg
-40…+125
°C
Operation Junction Temperature
T jop
-40…+(T jmax - 25)
°C
Isolation Properties
Isolation voltage
AC voltage RMS
tp = 60s
2500
V
DC voltage
t p = 2s
6000
V
min 12,7
mm
8,07 \ 7,86
mm
Vi sol
Creepage distance
Clearance
Comparative Tracking Index
Copyright Vincotech
solder pin \ Press-fit
>200
CTI
2
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Characteristic Values
Buck Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
25
1,70
2,22
125
1,88
150
1,93
Static
Gate-emitter threshold voltage
V GE(th)
Collector-emitter saturation voltage
V CEsat
V GE=V CE
0,0015
15
150
Collector-emitter c ut-off c urrent
I CES
0
650
Gate-emitter leakage current
I GES
20
0
Internal gate resistanc e
25
125
25
80
240
125
rg
none
Input c apacitanc e
C ies
8600
Output c apacitanc e
C oes
Reverse transfer capacitanc e
C res
Gate charge
f=1 MHz
0
V
125
25
25
25
150
V
µA
nA
Ω
pF
32
15
Qg
520
150
25
332
nC
0,74
K/W
Thermal
Thermal resistance junction to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
t d(on)
R goff = 2 Ω
Rise time
Turn-off delay time
tr
R gon = 2 Ω
t d(off)
±15
Fall time
tf
Turn-on energy (per pulse)
E on
Turn-off energy (per pulse)
E off
Copyright Vincotech
Q rFWD = 3,8 µC
Q rFWD = 7,1 µC
Q rFWD = 8,1 µC
3
350
89
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
48
46
46
11
12
13
133
152
156
7
7
8
0,737
1,118
1,210
0,367
0,706
0,798
ns
mWs
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,67
1,77
125
1,67
150
1,66
Static
Forward voltage
Reverse leakage current
150
VF
25
650
Ir
V
7,6
150
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,84
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
Copyright Vincotech
di /dt = 7000 A/µs
di /dt = 7124 A/µs ±15
di /dt = 6971 A/µs
E rec
(di rf/dt )max
4
350
89
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
110
143
151
52
85
96
3,795
7,081
8,085
0,853
1,613
1,849
2642
2119
2131
A
ns
µC
mWs
A/µs
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switch
Parameter
Symbol
Conditions
Value
V GE [V] V CE [V] I C [A] T j[ °C]
Unit
Min
Typ
Max
3,3
4
4,7
25
1,70
2,22
125
1,88
150
1,93
Static
Gate-emitter threshold voltage
V GE(th)
Collec tor-emitter saturation voltage
V CEsat
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
V GE=V CE
0,0015
15
0
I CES
20
I GES
150
25
125
25
650
80
0
240
125
rg
none
Input capacitance
C ies
8600
Output capacitance
C oes
Reverse transfer capac itance
C res
Gate c harge
f=1 MHz
0
V
125
25
25
25
150
V
µA
nA
Ω
pF
32
15
Qg
520
150
25
332
nC
0,74
K/W
Thermal
Thermal resistance junc tion to sink
R th(j-s)
phase-change
material
ʎ =3,4W /mK
IGBT Switching
Turn-on delay time
t d(on)
R goff = 2 Ω
Rise time
Turn-off delay time
tr
R gon = 2 Ω
t d(off)
±15
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Copyright Vincotech
tf
E on
Q rFWD = 3,6 µC
Q rFWD = 6,9 µC
Q rFWD = 7,9 µC
E off
5
350
89
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
50
51
50
11
13
14
114
134
139
5
7
9
1,100
1,773
1,921
0,243
0,621
0,719
ns
mWs
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
25
1,67
1,77
125
1,67
150
1,66
Static
Forward voltage
Reverse leakage current
150
VF
25
650
Ir
V
7,6
150
µA
Thermal
Thermal resistanc e junction to sink
R th(j-s)
Phase-Change
Material
ʎ =3,4W/mK
0,84
K/W
FWD Switching
Peak recovery current
I RRM
Reverse recovery time
t rr
Recovered charge
Qr
Reverse recovered energy
Peak rate of fall of recovery current
di /dt = 5600 A/µs
di /dt = 6000 A/µs ±15
di /dt = 5796 A/µs
350
89
E rec
(di rf/dt )max
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
90
117
121
61
97
109
3,603
6,937
7,941
0,692
1,331
1,529
1618
1020
864
A
ns
µC
mWs
A/µs
Out. Boost Inverse Diode
Parameter
Symbol
Conditions
Value
V r [V] I F [A] T j [°C]
Min
Unit
Typ
Max
1,85
2
Static
25
Forward voltage
150
VF
125
150
Reverse leakage c urrent
650
Ir
V
1,66
25
1,8
150
µA
Thermal
Thermal resistance junc tion to sink
Copyright Vincotech
R th(j-s)
phase-c hange
material
ʎ =3,4W/mK
0,64
6
K/W
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
DC Link Capacitor
Parameter
Symbol
Conditions
Value
T j[°C]
Capacitance
Min
Typ
Unit
Max
300
C
Tolerance
-10
nF
+10
%
Thermistor
Parameter
Conditions
Symbol
V GE [V]
Rated resistance
ΔR/R
Power dissipation
P
Value
I C [A]
T j[ °C]
Min
25
R
Deviation of R100
V CE [V]
R100=1486 Ω
100
Power dissipation constant
Typ
Unit
Max
21,5
-4,5
kΩ
+4,5
%
25
210
mW
25
3,5
mW/K
B-value
B(25/50)
25
3884
K
B-value
B(25/100)
25
3964
K
Vincotech NTC Reference
Copyright Vincotech
F
7
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switch\ Out. Boost Switch Characteristics
Typical output characteristics
IGBT
Typical output characteristics
I C = f(V CE)
IGBT
I C = f(V CE)
400
I C (A)
I C (A)
400
300
300
200
200
100
100
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V C E (V)
V C E (V)
tp =
250
µs
V GE =
15
V
T j:
25 °C
tp =
250
125 °C
Tj =
150
150 °C
V GE from
8 V to 17 V in steps of 1 V
Typical transfer characteristics
IGBT
µs
°C
Transient Thermal Impedance as function of Pulse duration
I C = f(V GE)
IGBT
Z th(j-s) = f(t p)
150
Z t h(j
h(j--s)(K/W)
I C (A)
100
120
90
10-1
60
0,5
0,2
0,1
0,05
30
0,02
0,01
0,005
0
10-2
10-5
0
0
1
2
3
4
5
6
7
10-4
10-3
10-2
V G E (V)
tp =
100
µs
V CE =
10
V
T j:
25 °C
D =
125 °C
R th(j-s) =
150 °C
10
101
t p (s)
102
tp / T
0,74
K/W
IGBT thermal model values
R th (K/W)
Copyright Vincotech
10-1
8
1,09E-01
τ (s)
1,94E+00
2,21E-01
2,60E-01
2,87E-01
6,98E-02
8,43E-02
8,29E-03
3,94E-02
3,67E-04
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switch\ Out. Boost Switch Characteristics
Gate voltage vs Gate charge
IGBT
Safe operating area
V GE = f(Q G)
IGBT
I C = f(V CE)
I C (A)
1000
V G E (V)
15
130V
520V
12,5
100
10
7,5
10
5
1
2,5
0
0,1
0
50
100
150
200
250
300
350
400
1
10
Q G (nC)
1000
V C E (V)
At
I C=
100
At
150
Copyright Vincotech
A
9
D =
single pulse
Th =
80
ºC
V GE =
Tj =
±15
T jmax
V
ºC
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Diode\ Out. Boost Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
450
Z t h( jj--s) (K/W)
IF (A)
100
400
350
300
250
10-1
200
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
150
100
50
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,84
K/W
150 °C
FWD thermal model values
Copyright Vincotech
10
R (K/W)
6,09E-02
τ (s)
4,33E+00
1,45E-01
8,74E-01
3,25E-01
1,39E-01
2,06E-01
4,67E-02
8,27E-02
9,15E-03
2,35E-02
1,16E-03
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Inverse Diode Characteristics
FWD
Typical forward characteristics
I F = f(V F )
FWD
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
500
Z t h( jj--s) (K/W)
IF (A)
100
400
300
10-1
200
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
10-2
0
0
1
2
3
4
10-4
5
10-3
10-2
VF (V)
tp =
250
µs
T j:
10-1
100
101
102
t p (s)
25 °C
D=
tp / T
125 °C
R th(j-s) =
0,64
K/W
150 °C
FWD thermal model values
R (K/W)
6,14E-02
τ (s)
3,48E+00
1,03E-01
5,85E-01
2,81E-01
9,46E-02
1,21E-01
2,14E-02
4,83E-02
5,07E-03
2,26E-02
5,92E-04
Thermistor
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
11
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
2
2,5
E (mWs)
E ( mWs)
Typical swit ching energy losses as a f unct ion of collect or current
Eon
Eon
1,5
2
Eon
Eon
Eoff
Eoff
1,5
Eo n
1
Eo n
1
E off
Eoff
Eoff
0,5
0,5
Eo ff
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
25 °C
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
125 °C
T j:
2
4
6
150 °C
V GE =
IC =
Figure 3.
FWD
±15
V
89
A
T j:
FWD
E rec = f(I c)
E rec = f(r g )
E ( mWs)
E (mWs)
10
125 °C
Figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
R g ( Ω)
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
3
8
25 °C
With an inductive load at
350
V
V CE =
2
2,5
Erec
Erec
1,5
Erec
2
1
1,5
Erec
Erec
1
0,5
0,5
0
0
10
30
50
70
With an inductive load at
350
V
V CE =
V GE =
±15
V
R gon =
2
Ω
Copyright Vincotech
90
110
130
150
I C (A)
0
170
25 °C
T j:
1
2
3
With an inductive load at
350
V
V CE =
125 °C
150 °C
V GE =
IC=
12
±15
V
89
A
4
5
6
7
8
r g (Ω)
9
25 °C
T j:
125 °C
150 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μ s)
1
td(off )
td(off )
0,1
0,1
td(on)
td(on)
tr
0,01
tr
0,01
tf
tf
0,001
0,001
10
30
50
70
90
110
130
150
170
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
1
2
3
V CE =
350
V
V CE =
350
V
V GE =
±15
V
V GE =
±15
V
IC =
89
A
R gon =
2
Ω
R goff =
2
Ω
4
5
6
7
8
9
r g (Ω)
With an inductive load at
150
°C
Tj =
Figure 7.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Figure 8.
FWD
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,12
0,12
t rr (μs)
t rr (μs)
trr
trr
trr
trr
0,09
0,09
trr
0,06
0,06
0,03
0,03
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
At
trr
350
V
V GE =
±15
V
R gon =
2
Ω
V CE=
Copyright Vincotech
2
3
4
5
6
7
8
9
R g o n (Ω)
25 °C
T j:
1
At
V CE =
125 °C
V GE =
150 °C
IC=
13
350
V
±15
V
89
A
25 °C
T j:
125 °C
150 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
12
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
Qr
Qr
10
8
Qr
9
Qr
6
6
Qr
4
Qr
3
2
0
At
0
10
30
50
70
90
110
130
150
170
0
1
2
3
4
5
6
7
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
At
V CE =
25 °C
T j:
At
VCE=
125 °C
V GE =
150 °C
I C=
Figure 11.
FWD
350
V
±15
V
89
A
9
R g on (Ω)
25 °C
T j:
125 °C
150 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
200
I R M (A)
I R M (A)
160
IRM
I RM
IRM
120
150
IRM
IRM
100
80
50
40
0
0
10
At
IRM
30
50
70
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
Copyright Vincotech
90
110
130
150
I C (A)
0
170
2
3
4
5
6
7
8
9
R go n (Ω)
25 °C
T j:
1
At
V CE =
125 °C
V GE =
150 °C
IC=
14
350
V
±15
V
89
A
25 °C
T j:
125 °C
150 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
12000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
10000
di F / dt
dir r/dt
8000
di F / dt
di r r/ dt
9000
6000
6000
4000
3000
2000
0
0
10
30
50
70
90
110
130
150
0
170
2
4
6
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
At
V CE =
25 °C
T j:
At
V CE =
125 °C
V GE =
150 °C
I C=
Figure 15.
350
V
±15
V
89
A
10
R g o n (Ω)
25 °C
T j:
125 °C
150 °C
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
350
I C MAX
I c CHIP
300
250
MODULE
200
Ic
150
V CE MAX
100
50
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
2
Ω
R goff =
2
Ω
Tj =
Copyright Vincotech
15
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Definition
General conditions
=
125 °C
=
2Ω
Without internal capacitor
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
2Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
300
200
IC
%
%
150
200
tdoff
100
VGE 90%
VCE 90%
VCE
100
VGE
IC
50
VGE
tdon
tEoff
VCE
VGE 10%
0
0
tEon
IC 1%
-50
-0,01
0,04
0,09
0,14
VCE 3%
IC 10%
0,19
-100
2,98
0,24
t (µs)
3,02
3,06
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
20
V
V GE (100%) =
20
V
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
89
A
I C (100%) =
89
A
t doff =
t Eoff =
0,152
0,177
µs
µs
t don =
t Eon =
0,046
0,124
µs
µs
Figure 3.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,1
3,14
t (µs)
Figure 4.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
300
150
%
%
125
IC
250
fitted
IC
100
200
IC 90%
75
150
IC 60%
VCE
50
100
IC 40%
IC 90%
tr
25
50
IC10%
VCE
0
-25
0,12
tf
0,14
0,16
0,18
0
0,2
-50
3,04
0,22
t (µs)
IC 10%
3,055
3,07
3,085
3,115
t (µs)
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
89
A
I C (100%) =
89
A
tf=
0,007
µs
tr =
0,012
µs
Copyright Vincotech
3,1
16
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Definition
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
125
%
IC 1%
%
Eoff
Eon
100
100
Poff
Pon
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEon
tEoff
-25
-0,01
0,04
0,09
0,14
0,19
-25
2,99
0,24
3,02
3,05
3,08
P off (100%) =
31,16
kW
P on (100%) =
31,16
kW
E off (100%) =
0,71
mJ
E on (100%) =
1,12
mJ
t Eoff =
0,18
µs
t Eon =
0,12
µs
Figure 7.
3,11
3,14
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
100
Id
trr
50
Vd
fitted
0
IRRM 10%
-50
-100
IRRM 90%
IRRM 100%
-150
-200
3,03
3,06
3,09
3,12
3,15
3,18
t (µs)
V d (100%) =
350
V
I d (100%) =
89
A
I RRM (100%) =
-143
A
t rr =
0,085
µs
Copyright Vincotech
17
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Buck Switching Definition
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
125
150
%
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Id
%
Qrr
Erec
100
100
tQrr
50
tErec
75
Prec
0
50
-50
25
-100
0
-150
-200
3,03
3,09
3,15
3,21
-25
3,03
3,27
t (µs)
3,09
3,15
3,27
t (µs)
I d (100%) =
89
A
P rec (100%) =
31,16
kW
Q rr (100%) =
7,08
µC
E rec (100%) =
1,61
mJ
t Qrr =
0,17
µs
t Erec =
0,17
µs
Copyright Vincotech
3,21
18
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(rg)
2,5
2,5
E (mWs)
E ( mWs)
Typical swit ching energy losses as a f unct ion of collect or current
2
2
Eon
Eon
1,5
1,5
Eon
E on
Eoff
1
1
Eoff
0,5
0,5
E off
Eoff
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
25 °C
With an inductive load at
350
V
V CE =
125 °C
T j:
1
2
3
4
V GE =
±15
V
V GE =
R gon =
2
Ω
IC =
R goff =
2
Ω
Figure 3.
FWD
±15
V
90
A
5
T j:
E rec = f(I c)
E rec = f(r g )
E (mWs)
E ( mWs)
8
R g ( Ω)
9
125 °C
FWD
Typical reverse recovered energy loss as a f unct ion of gat e resist or
Erec
7
Figure 4.
Typical reverse recovered energy loss as a f unct ion of collect or current
2,5
6
25 °C
With an inductive load at
350
V
V CE =
2
2
1,6
1,5
1,2
Erec
Erec
0,8
1
Erec
0,4
0,5
0
0
10
30
50
70
With an inductive load at
350
V
V CE =
90
110
130
150
I C (A)
0
170
25 °C
T j:
1
3
With an inductive load at
350
V
V CE =
125 °C
V GE =
±15
V
V GE =
R gon =
2
Ω
IC=
Copyright Vincotech
2
19
±15
V
90
A
4
5
6
7
8
r g (Ω)
9
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(r g)
1
t ( μ s)
t ( μs)
1
td(off )
td(off )
0,1
0,1
td(on)
td(on)
tr
tr
0,01
0,01
tf
tf
0,001
0,001
10
30
50
70
90
110
130
150
170
0
I C (A)
(A)
With an inductive load at
125
°C
Tj=
1
2
3
4
5
6
7
8
V CE =
350
V
V CE =
350
V
V GE =
±15
V
V GE =
±15
V
R gon =
2
Ω
IC =
90
A
R goff =
2
Ω
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery t ime as a f unct ion of collect or current
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr = f(I C)
t rr = f(R gon)
0,16
t rr (μs)
t rr (μs)
0,16
0,12
0,12
trr
0,08
trr
0,08
trr
0,04
trr
0,04
0
0
10
30
50
70
90
110
130
150
170
0
I C (A)
At
9
r g (Ω)
With an inductive load at
125
°C
Tj =
350
V
V GE =
±15
V
R gon =
2
Ω
V CE=
Copyright Vincotech
2
3
4
5
6
7
8
9
R g o n (Ω)
25 °C
T j:
1
At
125 °C
V CE =
V GE =
IC=
20
350
V
±15
V
90
A
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recoved charge as a f unction of IGBT turn on gat e resist or
Q r = f(I C)
Q r = f(R gon)
12
Q r (µC)
Q r (μC)
Typical recovered charge as a f unct ion of collect or current
8
Qr
Qr
9
6
6
4
Qr
Qr
3
2
0
At
0
10
30
50
70
90
110
130
150
170
0
1
2
3
4
5
6
7
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
At
25 °C
T j:
VCE=
At
125 °C
V GE =
I C=
Figure 11.
FWD
350
V
±15
V
90
A
9
R g on (Ω)
25 °C
T j:
125 °C
Figure 12.
FWD
Typical peak reverse recovery current current as a f unction of collector current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gat e resistor
I RM = f(I C)
I RM = f(R gon)
160
I R M (A)
I R M (A)
160
I RM
120
120
IRM
IRM
80
80
I RM
40
40
0
0
10
At
30
50
70
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
Copyright Vincotech
90
110
130
150
I C (A)
0
170
2
3
4
5
6
7
8
9
R go n (Ω)
25 °C
T j:
1
At
125 °C
V CE =
V GE =
IC=
21
350
V
±15
V
90
A
25 °C
T j:
125 °C
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of IGBT t urn on gate resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
10000
d i /dt (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
10000
di F / dt
dir r/dt
8000
di F / dt
di r r/ dt
8000
6000
6000
4000
4000
2000
2000
0
0
10
30
50
70
90
110
130
150
0
170
2
4
6
8
I C (A)
350
V
V GE =
±15
V
R gon =
2
Ω
V CE =
At
25 °C
T j:
At
125 °C
V CE =
V GE =
I C=
Figure 15.
350
V
±15
V
90
A
10
R g o n (Ω)
25 °C
T j:
125 °C
IGBT
Reverse bias saf e operat ing area
I C = f(V CE)
I C (A)
350
I C MAX
I c CHIP
300
250
MODULE
200
Ic
150
V CE MAX
100
50
0
0
100
200
300
400
500
600
700
V C E (V)
At
175
°C
R gon =
2
Ω
R goff =
2
Ω
Tj =
Copyright Vincotech
22
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Definition
Without internal capacitor
General conditions
=
125 °C
=
2Ω
Tj
R gon
=
R goff
Figure 1.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
2Ω
Figure 2.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
200
300
%
%
IC
150
200
tdoff
100
VGE 90%
VCE 90%
50
VCE
100
IC
VGE
IC 1%
VCE
0
VGE
tdon
tEoff
VGE 10%
0
VCE 3%
IC 10%
tEon
-50
-0,02
0,03
0,08
0,13
0,18
-100
2,98
0,23
t (µs)
3,02
3,06
3,1
V GE (0%) =
0
V
V GE (0%) =
0
V
V GE (100%) =
20
V
V GE (100%) =
20
V
V C (100%) =
350
V
V C (100%) =
350
V
I C (100%) =
90
A
I C (100%) =
90
A
t doff =
t Eoff =
0,149
0,166
µs
µs
t don =
t Eon =
0,045
0,134
µs
µs
Figure 3.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tf
3,14
Figure 4.
3,18
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
200
250
%
%
200
150
fitted
IC
150
100
IC 90%
100
VCE
IC 60%
IC 40%
50
50
VCE
tf
0
IC10%
IC
IC 10%
0
-50
0,11
0,13
0,15
0,17
-50
3,02
0,19
t (µs)
V C (100%) =
350
V
I C (100%) =
90
A
tf=
0,006
µs
Copyright Vincotech
IC 90%
tr
3,032
3,044
3,056
3,068
3,08
t (µs)
23
V C (100%) =
350
V
I C (100%) =
90
A
tr =
0,014
µs
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Definition
Figure 5.
IGBT
Turn-of f Swit ching Wavef orms & def init ion of tEof f
Figure 6.
IGBT
Turn-on Swit ching Wavef orms & def init ion of t Eon
125
125
%
Poff
%
IC 1%
100
Eon
100
Pon
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
Eoff
0
0
tEon
tEoff
-25
-0,01
0,04
0,09
0,14
-25
2,97
0,19
3,01
3,05
P off (100%) =
31,58
kW
P on (100%) =
31,58
kW
E off (100%) =
0,69
mJ
E on (100%) =
1,17
mJ
t Eoff =
0,17
µs
t Eon =
0,13
µs
Figure 7.
3,09
3,13
t (µs)
t (µs)
FWD
Turn-of f Swit ching Wavef orms & def inition of t rr
150
%
Id
100
trr
50
0
fitted
Vd
IRRM 10%
-50
-100
-150
3,03
IRRM 90%
IRRM 100%
3,07
3,11
3,15
3,19
t (µs)
V d (100%) =
350
V
I d (100%) =
90
A
I RRM (100%) =
-122
A
t rr =
0,089
µs
Copyright Vincotech
24
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Out. Boost Switching Definition
Figure 8.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Figure 9.
125
150
%
FWD
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
%
Id
Qrr
Erec
100
100
Prec
tQrr
50
75
0
50
-50
25
-100
0
tErec
-150
3,02
3,07
3,12
3,17
3,22
-25
3,02
3,27
t (µs)
3,07
3,12
3,17
3,27
t (µs)
I d (100%) =
90
A
P rec (100%) =
31,58
kW
Q rr (100%) =
6,75
µC
E rec (100%) =
1,65
mJ
t Qrr =
0,18
µs
t Erec =
0,18
µs
Copyright Vincotech
3,22
25
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with solder pins
without thermal paste 12mm housing with Press-fit pins
Ordering Code
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
Text
NN-NNNNNNNNNNNNNN
TTTTTTTVV WWYY UL
Vinco LLLLL SSSS
Name
Date code
UL & Vinco
Lot
Serial
N N -N N N N N N N N N N N N N N -T T T T T T T V V
WWYY
UL Vinco
LLLLL
SSSS
Datamatrix
Type
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
52,2
6,9
NTC1
2
52,2
0
NTC2
3
36,2
6,75
E37
4
33,2
7,9
G3
5
33,2
4,9
G7
6
9,2
5,75
E48
7
6,2
6,9
G4
8
6,2
3,9
G8
9
2,7
0
DC-
10
0
0
DC-
11
12
13
2,7
0
2,7
2,7
2,7
5,4
DCDC-
14
0
5,4
DC-
15
2,7
12,75
GND
16
0
12,75
GND
17
2,7
15,45
GND
18
0
15,45
19
2,7
22,8
GND
DC+
20
0
22,8
21
2,7
25,5
DC+
DC+
Pin
X
Y
22
0
25,5
DC+
30
46
24
G2
23
2,7
28,2
DC+
31
52,2
20,1
OUT
OUT
DC-
Pin table[mm]
Function
24
0
28,2
DC+
32
49,5
22,8
25
18,3
22,45
E15
33
52,2
22,8
OUT
26
21,3
21,3
G5
34
49,5
25,5
OUT
27
21,3
24,3
G1
35
52,2
25,5
OUT
28
43
22,15
29
46
21
E26
G6
36
37
49,5
52,2
28,2
28,2
OUT
OUT
Copyright Vincotech
26
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11,T12,T15,T16
IGBT
D11, D12
FWD
650V
75A
Buck Switch
650V
150A
T13,T14,T17,T18
Buck Diode
IGBT
650V
75A
Out. Boost Switch
D13,D14,D17,D18
FWD
650V
75A
Out. Boost Diode
D43,D44,D47,D48
FWD
650V
75A
Out. Boost Inverse Diode
C1,C2
Capacitor
500V
-
DC Link Capacitor
Rt
NTC
-
-
Thermistor
Copyright Vincotech
27
Comment
16 Nov. 2015 / Revision 4
10-FY07NPA150SM02-L365F08
10-PY07NPA150SM02-L365F08Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
100
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY07NPA150SM02-L365F08-D4-14
16 Nov. 2015
Added Press-fit option
1, 30
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or
use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe
third parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for
reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
16 Nov. 2015 / Revision 4
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