UNISONIC TECHNOLOGIES CO., LTD UNA03R106M Preliminary POWER MOSFET 30A, 30V SILICON N-CHANNEL POWER MOSFET POWER SWITCHING 1 DESCRIPTION The UTC UNA03R106M is a silicon N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance and high speed switching, etc. DFN-8(5x6) FEATURES * RDS(ON) < 10.6 mΩ @ VGS=10V, ID=15A * Low RDS(ON) * High speed switching SYMBOL ORDERING INFORMATION Ordering Number Note: UNA03R106MG-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(5×6) S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-095.a UNA03R106M Preliminary POWER MOSFET ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current ID 30 A Drain Peak Current (Note 1) ID(pulse) 120 A Body-Drain Diode Reverse Drain Current IDR 30 A Avalanche Current (Note 3) IAP 8 A Avalanche Energy (Note 3) EAR 6.4 mJ Power Dissipation (TC=25°C) PD 25 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. PW ≤ 10µs, duty cycle ≤ 1%. 4. L=1mH, IAS=7A, VDD=30V, RG=25Ω, Starting TJ = 25°C 5. ISD ≤ 30A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction-to-Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJC RATINGS 5 UNIT °C/W 2 of 6 QW-R209-095.a UNA03R106M Preliminary POWER MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 1) SYMBOL BVDSS ∆BVDSS ∆TJ TEST CONDITIONS VGS=0, ID=10mA VDS=30V, VGS=0 VGS=±20 V, VDS=0 VGS(TH) VDS=10V, ID=1mA VGS=10V, ID=15A VGS=4.5V, ID=15A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG SWITCHING PARAMETERS Total Gate Charge QG VDS=30V, ID= 0.5A, IG=100μA, VGS=10 V Gate-to-Source Charge QGS (Note 1, 2) Gate-to-Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=30V, VDD=30V, ID=0.5A, RG=25Ω, ID=0.5A (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Body-Drain Diode Forward Voltage VSD IF=30A, VGS=0 (Note 1) IF=30A, VGS=0, Body-Drain Diode Reverse Recovery Time tRR diF/dt=100A/µs Note: Pulse Test: Pulse width < 300μs, Duty cycle < 2.0%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX 30 UNIT V ID=10mA, Referenced to 25°C IDSS IGSS RDS(ON) MIN mV/°C 1.2 8.3 10.9 1 ±0.1 µA µA 2.5 10.6 15.1 V mΩ mΩ 380 135 3.5 1.2 pF pF pF Ω 80 4 6 30 52 260 160 nC nC nC ns ns ns ns 0.88 13 1.15 V ns 3 of 6 QW-R209-095.a UNA03R106M Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-095.a UNA03R106M Preliminary POWER MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-095.a UNA03R106M Preliminary POWER MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-095.a