Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UNA03R106M
Preliminary
POWER MOSFET
30A, 30V SILICON
N-CHANNEL POWER MOSFET
POWER SWITCHING
1

DESCRIPTION
The UTC UNA03R106M is a silicon N-channel Power
MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on-state resistance and high speed
switching, etc.

DFN-8(5x6)
FEATURES
* RDS(ON) < 10.6 mΩ @ VGS=10V, ID=15A
* Low RDS(ON)
* High speed switching

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UNA03R106MG-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(5×6)
S: Source
1
S
2
S
Pin Assignment
3
4
5
6
S G D D
7
D
8
D
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
ID
30
A
Drain Peak Current (Note 1)
ID(pulse)
120
A
Body-Drain Diode Reverse Drain Current
IDR
30
A
Avalanche Current (Note 3)
IAP
8
A
Avalanche Energy (Note 3)
EAR
6.4
mJ
Power Dissipation (TC=25°C)
PD
25
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. PW ≤ 10µs, duty cycle ≤ 1%.
4. L=1mH, IAS=7A, VDD=30V, RG=25Ω, Starting TJ = 25°C
5. ISD ≤ 30A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction-to-Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJC
RATINGS
5
UNIT
°C/W
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
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 1)
SYMBOL
BVDSS
∆BVDSS
∆TJ
TEST CONDITIONS
VGS=0, ID=10mA
VDS=30V, VGS=0
VGS=±20 V, VDS=0
VGS(TH)
VDS=10V, ID=1mA
VGS=10V, ID=15A
VGS=4.5V, ID=15A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=30V, ID= 0.5A,
IG=100μA, VGS=10 V
Gate-to-Source Charge
QGS
(Note 1, 2)
Gate-to-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VGS=30V, VDD=30V, ID=0.5A,
RG=25Ω, ID=0.5A (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Body-Drain Diode Forward Voltage
VSD
IF=30A, VGS=0
(Note 1)
IF=30A, VGS=0,
Body-Drain Diode Reverse Recovery Time
tRR
diF/dt=100A/µs
Note: Pulse Test: Pulse width < 300μs, Duty cycle < 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX
30
UNIT
V
ID=10mA, Referenced to
25°C
IDSS
IGSS
RDS(ON)
MIN
mV/°C
1.2
8.3
10.9
1
±0.1
µA
µA
2.5
10.6
15.1
V
mΩ
mΩ
380
135
3.5
1.2
pF
pF
pF
Ω
80
4
6
30
52
260
160
nC
nC
nC
ns
ns
ns
ns
0.88
13
1.15
V
ns
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Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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