SSF6014
Feathers:
ID =60A
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=60V
Rdson=14mΩ（max.）
Description:
The SSF6014 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6014 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF6014 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
60
ID@Tc=100ْC
Continuous drain current,VGS@10V
42
IDM
Pulsed drain current
①
Units
A
240
Power dissipation
115
W
Linear derating factor
0.74
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
235
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
PD@TC=25ْC
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
1.31
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Test Conditions
Drain-to-Source breakdown voltage
60
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
12
14
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
gfs
Forward transconductance
—
60
—
S
VDS=5V,ID=30A
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2009.12.15
VDS=60V,VGS=0V
μA
VDS=60V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version: 2.3
page
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SSF6014
Qg
Total gate charge
—
45
—
Qgs
Gate-to-Source charge
—
4
—
Qgd
Gate-to-Drain("Miller") charge
—
15
—
VGS=10V
td(on)
Turn-on delay time
—
14.6
—
VDD=30V
tr
Rise time
—
14.2
—
td(off)
Turn-Off delay time
—
40
—
tf
Fall time
—
7.3
—
VGS=10V
Ciss
Input capacitance
—
1480
—
VGS=0V
Coss
Output capacitance
—
190
—
Reverse transfer capacitance
—
135
—
Crss
ID=30A
nC
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Min.
Typ.
Max.
—
—
60
Units
Test Conditions
MOSFET symbol
showing the
A
—
—
240
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
trr
Reverse Recovery Time
—
33
—
nS
TJ=25ْC,IF=60A
Qrr
Reverse Recovery Charge
—
61
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit:
BV dss
Gate charge test circuit:
L
V dd
V
gs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2009.12.15
RG
Version: 2.3
page
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SSF6014
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2009.12.15
Version: 2.3
page
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SSF6014
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.12.15
Version: 2.3
page
4of5
SSF6014
MECHANICAL DATA:
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
70
ϴ3
-
ϴ4
-
©Silikron Semiconductor Corporation
E1
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
Min
0.087
0.050
0.390
-
3
-
5
30
-
10
0
2009.12.15
0
70
-
0
7
90
30
50
Version: 2.3
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