SSF1122
Feathers:
ID =60A
Advanced trench process technology
Ultra low Rdson
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
BV=110V
Rdson=20mΩ（Typ）
Description:
The SSF1122 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1122 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF1122 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
Continuous drain current,VGS@10V
60
ID@Tc=100ْC Continuous drain current,VGS@10V
50
ID@Tc=25 ْC
IDM
Units
A
240
Pulsed drain current ①
181
W
Linear derating factor
2.0
W/ ْC
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy
240
mJ
EAR
Repetitive avalanche energy
PD@TC=25ْC Power dissipation
TJ
TSTG
②
TBD
Operating Junction and
ْC
–55 to +175
Storage Temperature Range
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
110
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
20
22
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
3.0
4.0
V
VDS=VGS,ID=250μA
-
58
—
S
VDS=5V,ID=30A
—
—
1
—
—
10
gfs
Forward transconductance
IDSS
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2010.12.30
μA
VDS=100V,VGS=0V
VDS=100V, VGS=0V, TJ=150ْC
Version: 2.1
page
1of5
SSF1122
IGSS
Qg
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
90
—
ID=30A
VDD=30V
VGS=20V
nA
VGS=-20V
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
Rise time
—
15.6
—
Turn-Off delay time
—
70.5
—
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
Crss
Reverse transfer capacitance
—
240
—
tr
td(off)
tf
nC
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
60
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
240
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=60A
－
107
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 40A, VDD = 50V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
BV dss
EAS test circuit
©Silikron Semiconductor Corporation
Gate charge test circuit
2010.12.30
Version: 2.1
page
2of5
SSF1122
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance:
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
©Silikron Semiconductor Corporation
2010.12.30
Version: 1.0
page
3of5
SSF1122
Source-Drain Diode Forward Voltage
Gate Charge
Max Drain Current vs Junction Temperature
Safe Operation Area
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2010.12.30
Version: 2.1
page
4of5
SSF1122
TO220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2010.12.30
Version: 2.1
page
5of5