SSF4N60
Features
Vdss = 600V
■
Extremely high dv/dt capability
■
Low Gate Charge Qg results in Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Id = 4A
Rdson = 2.3Ω (typ.)
Description
The SSF4N60 is a new generation of high voltage N–Channel
enhancement mode power MOSFETs and is obtained through
an extreme optimization layout design, in additional to pushing
on-resistance significantly down, special care is taken to ensure
a very good dv/dt capability, provide superior switching
performance, withstand high energy pulse in the avalanche, and
increases packing density.
Application
SSF4N60 TOP View (TO220)
■
High current, high speed switching
■
Lighting
■
Ideal for off-line power supply, adaptor, PFC
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous Drain Current,VGS@10V
4
ID@Tc=100ْC
Continuous Drain Current,VGS@10V
2.2
IDM
Pulsed Drain Current
PD@TC=25ْC
VGS
①
Units
A
16
Power Dissipation
80
W
Linear Derating Factor
0.67
W/ C
ْ
Gate-to-Source Voltage
±30
V
90
mJ
4
A
8.5
mJ
4.5
V/ns
–55 to +150
ْC
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
②
①
①
③
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
1.56
RθCS
Case-to-Sink, Flat, Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62.5
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
Units
ْC/W
page
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SSF4N60
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
V(BR)DSS
Min.
Typ.
Drain-to-Source Breakdown Voltage 600
△ V(BR)DSS/△ TJ Breakdown Voltage Temp. Coefficient —
Max. Units
Test Conditions
—
—
V
VGS=0V,ID=250μA
0.6
—
V/ْC
Reference to 25ْC,ID=250μA
RDS(on)
Static Drain-to-Source On-resistance
—
2.3
2.5
Ω
VGS=10V,ID=2.5A ④
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
gfs
Forward Transconductance
—
4.3
—
S
VDS=40V,ID=2.25A
IDSS
Drain-to-Source Leakage current
—
—
1
—
—
10
Gate-to-Source Forward leakage
—
—
0.5
Gate-to-Source Reverse leakage
—
—
-0.5
Qg
Total Gate Charge
—
11
15
Qgs
Gate-to-Source charge
—
3
—
Qgd
Gate-to-Drain("Miller") charge
—
5
—
td(on)
Turn-on Delay Time
—
13
36
tr
Rise Time
—
22
54
td(off)
Turn-Off Delay Time
—
28
66
tf
Fall Time
—
20
50
Ciss
Input Capacitance
—
515
670
Coss
Output Capacitance
—
55
72
Crss
Reverse Transfer Capacitance
—
6.5
8.5
IGSS
uA
VDS=600V,VGS=0V
VDS=480V,VGS=0V,TJ=150ْC
VGS=30V
uA
VGS=-30V
ID=5A
nC
VDS=400V
VGS=10V
VDD=250V
nS
ID=5A
RG=25Ω
VGS=0V
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Min.
Typ.
Max.
—
—
4
Units
MOSFET symbol
A
—
—
16
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=4A,VGS=0V ④
Trr
Reverse Recovery Time
—
300
—
nS
TJ=25ْC,IF=4A
Qrr
Reverse Recovery Charge
—
1.8
uC
di/dt=100A/μs ④
Notes:
① Repetitive rating; pulse width limited by maximum. junction temperature
② L = 15mH, IAS =2.2A, VDD = 50V, RG = 25Ω. Starting TJ = 25°C
③ ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25 ْC
④ Pulse width≤300μS; duty cycle≤2%
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
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SSF4N60
Typical Performance Characteristics
Figure 1 On-Region Characteristics
Figure 3 On-Resistance Variation vs. Drain
Figure 2 Transfer Characteristics
Figure 4 Body diode forward Voltage Variation vs.
Current and Gate Voltage
Characteristics
Source Current and temperature
Characteristics
Figure 6 Gate Charge Characteristics
Figure 5 Capacitance Characteristics
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
page
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SSF4N60
Figure 7 Breakdown Voltage Variation vs.
Figure 8 On-Resistance Variation vs.
Temperature
Temperature
Figure 10 Maximum Drain Current vs.
Figure 9 Maximum Safe Operation Area
Case Temperature
Figure 12 Transient Thermal Response Curve
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
page
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SSF4N60
Test Circuit and Waveform
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
page
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SSF4N60
TO-220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2009.11.10
Version: 1.0
page
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