elm32d548a

Single N-channel MOSFET
ELM32D548A-S
■General description
■Features
ELM32D548A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=85A
Rds(on) < 4.6mΩ (Vgs=10V)
Rds(on) < 7.2mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
85
54
V
A
4
170
38
72
A
A
mJ
3
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Ta=25°C
Ta=100°C
L=0.1mH
Tc=25°C
Tc=100°C
Junction and storage temperature range
Id
Idm
Ias
Eas
Power dissipation
59
23
-55 to 150
Pd
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
2.1
Unit
°C/W
62.5
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
3
GATE
DRAIN
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32D548A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=20V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=20A
Rds(on)
Vgs=4.5V, Id=15A
Vds=5V, Id=20A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=20A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Rg
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
1
Gfs
Gate-drain charge
Turn-on delay time
30
Vds=24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.50
μA
±100
nA
1.75
3.8
2.35
4.6
V
4.5
7.2
70
1.3
85
mΩ
1
S
1
V
A
1
4
Vgs=0V, Vds=15V, f=1MHz
2320
346
285
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
0.9
Ω
Vgs=10V, Vds=15V, Id=20A
54.0
7.5
nC
nC
2
2
Qgd
17.3
nC
2
td(on)
24
ns
2
tr
Vgs=10V, Vds=15V, Id=20A
td(off) Rgen=6Ω
16
63
ns
ns
2
2
24
ns
2
23
10
ns
nC
Qg
Qgs
tf
trr
Qrr
If=20A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 40A.
4-2
Single N-channel MOSFET
ELM32D548A-S
N-Channel
Enhancement Mode
Effect Transistor
■Typical electrical and thermalField
characteristics
NIKO-SEM
PD548BA
TO-252
Halogen-Free & Lead-Free
Output Characteristics
Transfer Characteristics
40
40
32
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
VGS=3V
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
24
16
VGS=2.5V
8
0
0
1
2
3
4
5
6
32
24
16
25�
-20�
8
125�
0
0
3
4
5
3000
1.8
2500
C , Capacitance(pF)
Normalized Drain to Source
ON-Resistance
2
Capacitance Characteristic
On-Resistance VS Temperature
2.0
1.6
1.4
1.2
1.0
0.8
VGS=10V
ID=20A
0.6
0.4
1
VGS, Gate-To-Source Voltage(V)
VDS, Drain-To-Source Voltage(V)
-50
-25
0
25
50
75
100
125
CISS
2000
1500
1000
500
COSS
CRSS
0
150
0
5
10
15
20
25
30
VDS, Drain-To-Source Voltage(V)
TJ , Junction Temperature(C)
Source-Drain Diode Forward Voltage
Gate charge Characteristics
100
VDS=15V
ID=20A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
10
6
4
2
0
0
10
20
30
40
50
10
150�
0.1
60
25�
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-To-Drain Voltage(V)
Qg , Total Gate Charge(nC)
D-06-3
REV 1.0
3
4-3
Single N-channel MOSFET
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
Single Pulse Maximum Power Dissipation
400
1000
Operation in This
Area is Limited by
RDS(ON)
Single Pulse
R�JC = 2.1 C/W
TC=25C
320
100
Power(W)
ID , Drain Current(A)
PD548BA
ELM32D548A-S
N-Channel
Enhancement Mode
Field Effect Transistor
NIKO-SEM
1ms
10
0.1
160
10ms
NOTE :
1.VGS= 10V
2.TC=25C
3.R�JC = 2.1 C/W
4.Single Pulse
1
240
80
100ms
DC
1
10
0
0.001
100
0.01
VDS, Drain-To-Source Voltage(V)
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
Transient Thermal Resistance
r(t) , Normalized Effective
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Notes
0.1
1.Duty cycle, D= t1 / t2
2.RthJC = 2.1 �/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
D-06-3
REV 1.0
4
4-4
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