MS23P01S

MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
D
The MS23P01S uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
G
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
S
General Features
Schematic diagram
● VDS = -20V,ID = -2.6A
RDS(ON) < 160mΩ @ VGS=-2.5V
RDS(ON) < 120mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
Marking and pin assignment
● Surface mount package
Application
● PWM applications
● Load switch
SC70-3/ SOT-323 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
A1SHB
MS23P01S
SOT-23
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-2.6
A
IDM
-13
A
PD
0.9
W
TJ,TSTG
-55 To 150
℃
RθJA
138
℃/W
Drain Current-Continuous
Drain Current -Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-
Typ
Max
Unit
-
V
-1
μA
Off Characteristics
-
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MS23P01S
Parameter
Symbol
Condition
Min
Typ
Max
Unit
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-0.4
-0.7
-1
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-2 A
-
78
120
mΩ
VGS=-2.5V, ID=-1.8A
-
102
160
mΩ
VDS=-5V,ID=-1A
6
-
-
S
-
325
-
PF
-
63
-
PF
-
37
-
PF
-
11
-
nS
Gate-Body Leakage Current
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
gFS
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=-10V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-10V, RL=5Ω
-
5.5
-
nS
td(off)
VGS=-4.5V,RGEN=3Ω
-
22
-
nS
-
8
-
nS
-
3.2
-
nC
-
0.6
-
nC
-
0.9
-
nC
-
-
-1.2
V
-
-
-2.6
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,ID=-2A,
VGS=-4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=2A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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MS23P01S
Typical Electrical and Thermal Characteristics
ton
tr
td(on)
toff
tf
td(off)
90%
VOUT
90%
INVERTED
10%
10%
90%
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
-ID- Drain Current (A）
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 4 Drain Current
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 3 Power Dissipation
-Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
-ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
MS23P01S
TJ-Junction Temperature(℃)
-Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
Figure 7 Transfer Characteristics
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
-Vgs Gate-Source Voltage (V)
-Is- Reverse Drain Current (A)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
-Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
MS23P01S
Vds Drain-Source Voltage (V)
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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MS23P01S
SC70-3 Package Information
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