APTM100A13DG Phase leg with Series diodes MOSFET Power Module VBUS Application Zero Current Switching resonant mode Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G1 S1 G2 VDSS = 1000V RDSon = 130m typ @ Tj = 25°C ID = 65A @ Tc = 25°C OUT 0/VBUS S2 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 65 49 240 ±30 156 1250 24 30 1300 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM100A13DG – Rev 3 October, 2012 Symbol VDSS APTM100A13DG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 32.5A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Typ 130 3 Max 600 2 156 5 ±450 Unit µA mA m V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 65A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 15.2 2.6 0.42 nF 562 nC 75 363 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 65A RG = 0.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 65A, RG = 0.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 65A, RG = 0.5Ω 9 9 50 ns 24 2.13 mJ 0.46 4.4 mJ 0.57 Series diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 125°C IF = 120A VR = 800V di/dt = 400A/µs Tj = 125°C Tj = 25°C 265 Tj = 125°C Tj = 25°C Tj = 125°C 350 1120 5800 www.microsemi.com Max 150 600 120 2.5 3 1.8 Tc = 100°C IF = 120A IF = 240A IF = 120A Typ Unit V µA A 3 V ns nC 2-7 APTM100A13DG – Rev 3 October, 2012 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTM100A13DG Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.10 0.46 Unit °C/W V 150 125 100 5 3.5 300 °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3-7 APTM100A13DG – Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100A13DG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 360 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 7V VGS=15&10V 150 6.5V ID, Drain Current (A) 120 6V 90 60 5.5V 30 5V 300 240 180 120 TJ=25°C 60 0 TJ=125°C 0 4 8 12 16 20 24 28 0 ID, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 3 4 5 6 7 8 9 10 70 Normalized to VGS=10V @ 32.5A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) RDS(on) Drain to Source ON Resistance TJ=-55°C 0 1 0.9 0.8 60 50 40 30 20 10 0 0 30 60 90 120 150 180 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-7 APTM100A13DG – Rev 3 October, 2012 ID, Drain Current (A) 180 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=32.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 0.6 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=65A TJ=25°C 12 10 VDS=200V VDS=500V 8 VDS=800V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 120 240 360 480 600 720 840 Gate Charge (nC) www.microsemi.com 5-7 APTM100A13DG – Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100A13DG APTM100A13DG Delay Times vs Current Rise and Fall times vs Current 50 td(off) 50 40 40 tr and tf (ns) VDS=667V RG=0.5Ω TJ=125°C L=100µH 30 20 td(on) 30 20 10 10 0 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 ID, Drain Current (A) ID, Drain Current (A) 90 100 Switching Energy vs Gate Resistance Switching Energy vs Current 6 VDS=667V RG=0.5Ω TJ=125°C L=100µH 7 6 5 Switching Energy (mJ) 8 Switching Energy (mJ) tr 0 20 Eon 4 3 2 Eoff 1 0 5 Eon 4 VDS=667V ID=65A TJ=125°C L=100µH 3 2 Eoff 1 0 20 30 40 50 60 70 80 90 100 0 ID, Drain Current (A) 1 2 3 4 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZCS 200 Hard switching 150 IDR, Reverse Drain Current (A) 300 Frequency (kHz) tf VDS=667V RG=0.5Ω TJ=125°C L=100µH VDS=667V D=50% RG=0.5Ω TJ=125°C TC=75°C 100 50 0 10 20 30 40 50 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 60 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6-7 APTM100A13DG – Rev 3 October, 2012 td(on) and td(off) (ns) 60 APTM100A13DG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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