APTM100UM45DAG-Rev4.pdf

APTM100UM45DAG
Single switch
with Series diode
MOSFET Power Module
SK
S
D
G
DK
VDSS = 1000V
RDSon = 45mΩ typ @ Tj = 25°C
ID = 215A @ Tc = 25°C
Application
 Zero Current Switching resonant mode
Features
 Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
- M5 power connectors
 High level of integration
 AlN substrate for improved thermal performance
Benefits
 Outstanding performance at high frequency
operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
215
160
860
±30
52
5000
30
50
3200
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM100UM45DAG – Rev 4 October, 2012
Symbol
VDSS
APTM100UM45DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 107.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Typ
45
3
Max
600
3
52
5
±600
Unit
µA
mA
m
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 215A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
42.7
7.6
1.3
nF
1602
nC
204
1038
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 215A
RG = 0.5
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5Ω
18
14
140
ns
55
7.2
mJ
4.3
12
mJ
5.8
Series diode ratings and characteristics
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
VR=1200V
Min
1200
Tj = 25°C
Tj = 125°C
IF = 360A
VR = 800V
di/dt = 1200A/µs
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Max
600
2000
Tj = 125°C
360
2.5
3
1.8
Tj = 25°C
265
Tj = 125°C
350
Tj = 80°C
IF = 360A
IF = 720A
IF = 360A
Typ
Tj = 25°C
3.3
Tj = 125°C
17.3
Unit
V
µA
A
3
V
ns
µC
2–7
APTM100UM45DAG – Rev 4 October, 2012
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
APTM100UM45DAG
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To Heatsink
For teminals
M6
M5
4000
-40
-40
-40
3
2
Typ
Max
0.025
0.16
Unit
°C/W
V
150
125
100
5
3.5
300
°C
N.m
g
SP6 Package outline (dimensions in mm)
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3–7
APTM100UM45DAG – Rev 4 October, 2012
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM100UM45DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.03
0.025
0.9
0.02
0.7
0.015
0.5
0.01
0.3
0.005
Single Pulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
540
720
VGS=15, 10V
7V
420
ID, Drain Current (A)
6.5V
360
300
6V
240
180
120
5.5V
60
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
480
360
TJ=25°C
240
120
TJ=125°C
5V
0
0
5
10
15
20
25
30
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 107.5A
1.3
1.2
1.1
VGS=10V
VGS=20V
1
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
240
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
0.9
0.8
210
180
150
120
90
60
30
0
0
120
240
360
480
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM100UM45DAG – Rev 4 October, 2012
ID, Drain Current (A)
480
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=107.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDSon
1ms
100
10
0.6
Single pulse
TJ=150°C
TC=25°C
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
Coss
10000
Crss
1000
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
14
ID=215A
TJ=25°C
12
10
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
0
350
700
1050 1400 1750 2100
Gate Charge (nC)
5–7
APTM100UM45DAG – Rev 4 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM45DAG
APTM100UM45DAG
Delay Times vs Current
Rise and Fall times vs Current
100
td(off)
120
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
90
60
td(on)
30
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
80
tr and tf (ns)
60
40
tr
20
0
0
80 120 160 200 240 280 320 360 400
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
20
16
Eoff
12
VDS=670V
ID=215A
TJ=125°C
L=100µH
36
Eon
Switching Energy (mJ)
Switching Energy (mJ)
24
8
4
0
30
24
Eoff
18
Eon
12
Eoff
6
0
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
0
ZCS
Hard
switching
0
20
50
80
110
140
170
3
4
5
6
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
400
200
2
1000
VDS=670V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
600
1
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
800
Frequency (kHz)
tf
200
ID, Drain Current (A)
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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6–7
APTM100UM45DAG – Rev 4 October, 2012
td(on) and td(off) (ns)
150
APTM100UM45DAG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM100UM45DAG – Rev 4 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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