APTM100UM65SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D S Q1 G VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 145 110 580 ±30 78 3250 30 50 3200 Unit V A November, 2013 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100UM65S-AG – Rev 4 Symbol VDSS APTM100UM65SAG Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1000V VGS = 10V, ID = 72.5A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Min Typ 65 3 Max 400 78 5 ±400 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 28.5 5.08 0.9 Max Unit nF 1068 VGS = 10V VBus = 500V ID = 145A 136 nC 692 18 14 140 VGS = 15V VBus = 500V ID = 145A RG = 0.75Ω ns 55 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 145A, RG = 0.75Ω 4.8 mJ 2.9 8 mJ 3.9 0.038 °C/W Max Unit 750 V µA Series diode ratings and characteristics Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Min 1000 Tc = 80°C IF = 240A IF = 480A IF = 240A IF = 240A VR = 667V di/dt = 800A/µs Typ Tj = 125°C 240 2 2.2 1.7 Tj = 25°C 280 Tj = 125°C Tj = 25°C Tj = 125°C 350 3.04 14.4 Junction to Case Thermal Resistance A 2.5 V ns µC 0.23 www.microsemi.com November, 2013 VRRM IRM Test Conditions °C/W 2–7 APTM100UM65S-AG – Rev 4 Symbol Characteristic APTM100UM65SAG Parallel diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Test Conditions IF = 240A VR = 667V di/dt = 800A/µs Max Unit 750 V µA 1000 Tc = 80°C IF = 240A IF = 480A IF = 240A Typ Tj = 125°C 240 2 2.2 1.7 Tj = 25°C 280 Tj = 125°C Tj = 25°C 350 3.04 Tj = 125°C 14.4 Junction to Case Thermal Resistance A 2.5 V ns µC 0.23 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature To Heatsink M6 Mounting torque For teminals M5 Package Weight Min 4000 -40 -40 -40 -40 3 2 Max 150 TJmax -25 125 100 5 3.5 300 Unit V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM100UM65S-AG – Rev 4 November, 2013 SP6 Package outline (dimensions in mm) APTM100UM65SAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 D = 0.9 0.035 0.03 0.7 0.025 0.5 0.02 0.015 0.3 0.01 0.005 0 0.00001 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 360 400 7V 280 ID, Drain Current (A) 6.5V 240 200 160 6V 120 80 5.5V 40 300 200 TJ=125°C TJ=25°C 100 5V 0 5 10 15 20 25 0 30 0 Normalized to VGS=10V @ 1.2 1.1 VGS=10V VGS=20V 0.9 0 80 160 240 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.3 1 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1 320 120 80 40 November, 2013 0 0 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100UM65S-AG – Rev 4 ID, Drain Current (A) VDS > ID (on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=15, 10V 320 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=72.5A 2.0 1.5 1.0 25 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 100µs ID, Drain Current (A) 0.9 0.8 0.7 0.6 limited by R DSon 100 1ms 10 10ms Single pulse TJ =150°C TC=25°C 1 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss Crss 1000 100 0 10 20 30 10 100 1000 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 40 Gate Charge vs Gate to Source Voltage 14 I D=145A TJ=2 5 °C 12 VDS=200V VDS=500V 10 8 VDS=800V 6 4 2 November, 2013 VGS (TH), Threshold Voltage (Normalized) 75 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 C, Capacitance (pF) 50 0 50 VDS, Drain to Source Voltage (V) 0 300 600 900 1200 1500 Gate Charge (nC) www.microsemi.com 5–7 APTM100UM65S-AG – Rev 4 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM100UM65SAG APTM100UM65SAG Delay Times vs Current Rise and Fall times vs Current 100 160 VDS=670V R G =0.75Ω TJ=1 25 °C L=100µH 80 120 t r and t f (ns) t d(on) and t d(off) (ns) td(off) VDS=670V R G =0.75Ω TJ=1 25 °C L=100µH 80 40 td(on) 94 138 182 226 60 40 tr 20 0 50 0 270 50 94 138 182 226 270 ID, Drain Current (A) ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 26 14 VDS=670V R G =0.75Ω TJ=1 25 °C L=100µH 12 10 Eon Switching Energy (mJ) Switching Energy (mJ) tf Eoff 8 6 4 2 0 50 94 138 182 226 270 VDS=670V I D=145A TJ=1 25 °C L=100µH 22 18 14 Eon 10 6 Eoff 2 ID, Drain Current (A) 0 1 2 3 4 5 6 7 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current 300 ZVS ZCS 200 150 50 Hard switching November, 2013 VDS=670V D=50% R G =0.75Ω TJ=1 25 °C TC =75 °C 100 0 35 55 75 95 115 135 ID, Drain Current (A) www.microsemi.com 6–7 APTM100UM65S-AG – Rev 4 Frequency (kHz) 250 APTM100UM65SAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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