APTM100UM65SAG-Rev4.pdf

APTM100UM65SAG
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
S
Q1
G
VDSS = 1000V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 145A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
145
110
580
±30
78
3250
30
50
3200
Unit
V
A
November, 2013
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM100UM65S-AG – Rev 4
Symbol
VDSS
APTM100UM65SAG
Electrical Characteristics
Symbol
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 1000V
VGS = 10V, ID = 72.5A
VGS = VDS, ID = 20mA
VGS = ±30 V, VDS = 0V
Min
Typ
65
3
Max
400
78
5
±400
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
28.5
5.08
0.9
Max
Unit
nF
1068
VGS = 10V
VBus = 500V
ID = 145A
136
nC
692
18
14
140
VGS = 15V
VBus = 500V
ID = 145A
RG = 0.75Ω
ns
55
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 145A, RG = 0.75Ω
4.8
mJ
2.9
8
mJ
3.9
0.038
°C/W
Max
Unit
750
V
µA
Series diode ratings and characteristics
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1000V
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Min
1000
Tc = 80°C
IF = 240A
IF = 480A
IF = 240A
IF = 240A
VR = 667V
di/dt = 800A/µs
Typ
Tj = 125°C
240
2
2.2
1.7
Tj = 25°C
280
Tj = 125°C
Tj = 25°C
Tj = 125°C
350
3.04
14.4
Junction to Case Thermal Resistance
A
2.5
V
ns
µC
0.23
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November, 2013
VRRM
IRM
Test Conditions
°C/W
2–7
APTM100UM65S-AG – Rev 4
Symbol Characteristic
APTM100UM65SAG
Parallel diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
VF
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1000V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Test Conditions
IF = 240A
VR = 667V
di/dt = 800A/µs
Max
Unit
750
V
µA
1000
Tc = 80°C
IF = 240A
IF = 480A
IF = 240A
Typ
Tj = 125°C
240
2
2.2
1.7
Tj = 25°C
280
Tj = 125°C
Tj = 25°C
350
3.04
Tj = 125°C
14.4
Junction to Case Thermal Resistance
A
2.5
V
ns
µC
0.23
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
To Heatsink
M6
Mounting torque
For teminals
M5
Package Weight
Min
4000
-40
-40
-40
-40
3
2
Max
150
TJmax -25
125
100
5
3.5
300
Unit
V
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–7
APTM100UM65S-AG – Rev 4
November, 2013
SP6 Package outline (dimensions in mm)
APTM100UM65SAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.04
D = 0.9
0.035
0.03
0.7
0.025
0.5
0.02
0.015
0.3
0.01
0.005
0
0.00001
Single Pulse
0.1
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
360
400
7V
280
ID, Drain Current (A)
6.5V
240
200
160
6V
120
80
5.5V
40
300
200
TJ=125°C
TJ=25°C
100
5V
0
5
10
15
20
25
0
30
0
Normalized to
VGS=10V @
1.2
1.1
VGS=10V
VGS=20V
0.9
0
80
160
240
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.3
1
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
320
120
80
40
November, 2013
0
0
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM100UM65S-AG – Rev 4
ID, Drain Current (A)
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
VGS=15, 10V
320
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=72.5A
2.0
1.5
1.0
25
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
100µs
ID, Drain Current (A)
0.9
0.8
0.7
0.6
limited by R DSon
100
1ms
10
10ms
Single pulse
TJ =150°C
TC=25°C
1
25
50
75
100
125
150
1
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
Crss
1000
100
0
10
20
30
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
40
Gate Charge vs Gate to Source Voltage
14
I D=145A
TJ=2 5 °C
12
VDS=200V
VDS=500V
10
8
VDS=800V
6
4
2
November, 2013
VGS (TH), Threshold Voltage
(Normalized)
75
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
C, Capacitance (pF)
50
0
50
VDS, Drain to Source Voltage (V)
0
300
600
900
1200
1500
Gate Charge (nC)
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5–7
APTM100UM65S-AG – Rev 4
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM100UM65SAG
APTM100UM65SAG
Delay Times vs Current
Rise and Fall times vs Current
100
160
VDS=670V
R G =0.75Ω
TJ=1 25 °C
L=100µH
80
120
t r and t f (ns)
t d(on) and t d(off) (ns)
td(off)
VDS=670V
R G =0.75Ω
TJ=1 25 °C
L=100µH
80
40
td(on)
94
138
182
226
60
40
tr
20
0
50
0
270
50
94
138
182
226
270
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
26
14
VDS=670V
R G =0.75Ω
TJ=1 25 °C
L=100µH
12
10
Eon
Switching Energy (mJ)
Switching Energy (mJ)
tf
Eoff
8
6
4
2
0
50
94
138
182
226
270
VDS=670V
I D=145A
TJ=1 25 °C
L=100µH
22
18
14
Eon
10
6
Eoff
2
ID, Drain Current (A)
0
1
2
3
4
5
6
7
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
300
ZVS
ZCS
200
150
50
Hard
switching
November, 2013
VDS=670V
D=50%
R G =0.75Ω
TJ=1 25 °C
TC =75 °C
100
0
35
55
75
95
115
135
ID, Drain Current (A)
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6–7
APTM100UM65S-AG – Rev 4
Frequency (kHz)
250
APTM100UM65SAG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–7
APTM100UM65S-AG – Rev 4
November, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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