STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 600 V 600 V 600 V < 0.42 Ω < 0.42 Ω < 0.42 Ω 14 A 14 A 14 A 190 W 190 W 190 W TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 3 1 2 I2SPAK TO-220 3 2 1 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING STP16NK60Z P16NK60Z TO-220 TUBE STB16NK60Z-S B16NK60Z I2SPAK TUBE STW16NK60Z W16NK60Z TO-247 TUBE March 2004 1/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 14 A ID Drain Current (continuous) at TC = 100°C 8.8 A Drain Current (pulsed) 56 A IDM () PTOT VESD(G-S) dv/dt (1) Tj Tstg Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 6000 V 4.5 V/ns -55 to 150 °C Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220/ I²SPAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-247 0.66 62.5 Maximum Lead Temperature For Soldering Purpose °C/W 50 °C/W 300 °C Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 14 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 360 mJ GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 7 A V(BR)DSS 600 Unit 3 V 3.75 4.5 V 0.38 0.42 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 7 A VDS = 25V, f = 1 MHz, VGS = 0 12 S 2650 285 62 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 158 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 480 V, ID = 14 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 30 25 70 15 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 14 A, VGS = 10V 86 17 46 nC nC nC SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 14 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 490 5.4 22 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 585 7 24 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 14 56 A A 1.6 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z Safe Operating Area for TO-220/I²SPAK Thermal Impedance for TO-220/I²SPAK Safe Operating Area for TO-247 Thermal Impedance for TO-247 Output Characteristics 4/11 Transfer Characteristics STP16NK60Z - STB16NK60Z-S - STW16NK60Z Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/11 Normalized BVDSS vs Temperature STP16NK60Z - STB16NK60Z-S - STW16NK60Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z TO-220 MECHANICAL DATA DIM. 8/11 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 0.052 F 1.23 1.32 0.048 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP16NK60Z - STB16NK60Z-S - STW16NK60Z I2SPAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. 4.60 0.173 0.181 MAX. 0.106 A 4.40 A1 2.49 2.69 0.098 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 0.024 C 0.45 0.60 0.018 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.394 0.409 G 4.88 5.28 0.192 0.208 L 16.7 17.5 0.657 0.689 L2 1.27 1.4 0.05 0.055 L3 13.82 14.42 0.544 0.568 9/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 10/11 TYP 5.50 0.216 STP16NK60Z - STB16NK60Z-S - STW16NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 11/11