STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 600V - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID STB20NM60A-1 STP20NM60A STF20NM60A 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 3 1 ■ ■ ■ ■ TYPICAL RDS(on) = 0.25Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 2 TO-220 I²PAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE 2 PACKAGING STB20NM60A-1 B20NM60A I PAK TUBE STP20NM60A P20NM60A TO-220 TUBE STF20NM60A F20NM60A TO-220FP TUBE September 2003 1/8 STB20NM60A-1/STP20NM60A/STF20NM60A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS Gate-source Voltage Unit STF20NM60A ±30 V ID Drain Current (continuous) at TC = 25°C 20 20(*) ID Drain Current (continuous) at TC = 100°C 12.6 12.6(*) A 80 80(*) A Total Dissipation at TC = 25°C 192 45 W Derating Factor 1.2 0.36 W/°C IDM () PTOT Drain Current (pulsed) dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj A 15 V/ns -- 2500 V –55 to 150 Max. Operating Junction Temperature °C () Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl I2PAK/TO-220 TO-220FP 0.65 2.8 Maximum Lead Temperature For Soldering Purpose °C/W 62.5 °C/W 300 °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ± 30V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10A IDSS IGSS 2/8 Test Conditions Min. Typ. Max. 600 V 1 µA 10 µA ±100 nA 3 4 V 0.25 0.29 Ω VDS = Max Rating, TC = 125 °C 2 Unit STB20NM60A-1/STP20NM60A/STF20NM60A ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions Min. Typ. VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Max. Unit 11 S 1500 pF Ciss Input Capacitance Coss Output Capacitance 350 pF Crss Reverse Transfer Capacitance 35 pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 130 pF Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω Rg (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 200V, ID = 10 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 20A, VGS = 10V Typ. Max. Unit 25 ns 20 ns 39 54 nC 10 nC 20 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 6 ns 11 ns 21 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 20 A ISDM (2) Source-drain Current (pulsed) 80 A VSD (1) Forward On Voltage ISD = 20 A, VGS = 0 1.5 V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 390 5 25 ns µC A trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 510 6.5 26 ns µC A ISD Parameter Test Conditions Min. Typ. Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STB20NM60A-1/STP20NM60A/STF20NM60A Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STB20NM60A-1/STP20NM60A/STF20NM60A TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 5/8 STB20NM60A-1/STP20NM60A/STF20NM60A TO-220 MECHANICAL DATA DIM. 6/8 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STB20NM60A-1/STP20NM60A/STF20NM60A TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 7/8 STB20NM60A-1/STP20NM60A/STF20NM60A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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