STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh™Power MOSFET (With FAST DIODE) TYPE STW45NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS n ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 45 A ID Drain Current (continuos) at TC = 100°C 28.4 A Drain Current (pulsed) 180 A Total Dissipation at TC = 25°C 417 W Derating Factor 2.08 W/°C 20 V/ns –65 to 150 °C 150 °C IDM (l) PTOT dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area June 2002 (1) ISD ≤45A, di/dt ≤400A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. 1/8 STW45NM50FD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.3 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W 300 °C Tl Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 22.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 800 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) V(BR)DSS Min. Typ. Max. 500 Unit V 10 µA VDS = Max Rating, TC = 125 °C 100 µA VGS = ±30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 22.5A Min. Typ. Max. Unit 3 4 5 V 0.07 0.10 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 22.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 20 S Ciss Input Capacitance 3600 pF Coss Output Capacitance 680 pF Crss Reverse Transfer Capacitance 82 pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 350 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 2 Ω RG Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/8 STW45NM50FD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 250V, ID = 22.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 45A, VGS = 10V Typ. Max. Unit 28 ns 28 ns 92 120 nC 22 nC 40 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 45A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Typ. Max. Unit 11 ns 25 ns 44 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 45A, VGS = 0 ISD = 45A, di/dt = 100A/µs, VDD = 100V (see test circuit, Figure 5) trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Max. Unit 45 A 180 A 1.5 V 245 ns 2.2 µC 18 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS . Safe Operating Area Thermal Impedence 3/8 STW45NM50FD Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW45NM50FD Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics 5/8 Normalized On Resistance vs Temperature STW45NM50FD Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW45NM50FD TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. 0.19 0.20 A 4.85 5.15 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 7/8 STW45NM50FD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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