STE250NS10 N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP STripFET™ POWER MOSFET TYPE STE250NS10 ■ ■ ■ VDSS RDS(on) ID 100 V <0.0055 Ω 220A TYPICAL RDS(on) = 0.0045Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED APPLICATIONS ■ SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS Value Unit Drain-source Voltage (VGS = 0) 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 220 A ID Drain Current (continuos) at TC = 100°C 156 A VDGR VGS IDM(•) Ptot Parameter Drain Current (pulsed) 880 A Total Dissipation at TC = 25°C 500 W Derating Factor dv/dt (1) VISO Tstg Tj Peak Diode Recovery voltage slope Insulation Withstand Voltage (AC-RMS) Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. September 2001 . 4 W/°C 3.5 V/ns 2500 V -55 to 150 °C 150 °C (1 )ISD ≤220A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. 1/8 STE250NS10 THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 0.25 50 °C/W °C/W Max Value Unit AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 220 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 64 V) 800 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 50 500 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±400 nA VGS = 0 100 V ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. Max. Unit 2 3 4 V 0.0045 0.0055 Ω Typ. Max. Unit ID = 125 A DYNAMIC Symbol gfs Ciss Coss Crss 2/8 Parameter Test Conditions Forward Transconductance VDS = 20 V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 70 A Min. 60 S 31 4.3 1.2 nF nF nF STE250NS10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 125 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 110 380 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 50V ID= 220A VGS = 10V 900 160 330 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time ID = 125 A VDD = 50 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 1100 330 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time ID = 220 A Vclamp = 80 V RG = 4.7Ω, VGS = 10 V (Inductive Load, Figure 5) 950 330 600 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 220 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 220 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 200 1.35 13.5 Max. Unit 220 880 A A 1.5 V ns µC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STE250NS10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STE250NS10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STE250NS10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE250NS10 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 0.157 0.157 8.2 0.307 0.322 A G B O F E H D N J K C L M 7/8 STE250NS10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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