DIODES FZT717

FZT717
SOT223 PNP medium power transistor
Summary
BVCEO = -12V; IC = 3A
Description
Packaged in the SOT223 outline this low saturation 12V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
C
•
2W power dissipation
•
3A continuous current
•
Excellent hFE characteristics up to 10A (pulsed)
•
Low saturation voltage
B
E
Applications
•
Battery charging
•
MOSFET and IGBT gate driving
•
Motor drive
E
C
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1,000
C
B
Pinout - top view
FZT717TA
Device marking
FZT717
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FZT717
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
BVCBO
-12
V
Collector-emitter voltage
BVCEO
-12
V
Emitter-base voltage
BVEBO
-5
V
ICM
-10
A
Continuous collector current(a)
IC
-3
A
Base current
IB
-500
mA
Power dissipation at Tamb =25°C(a)
Linear derating factor
PD
2
W
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
RJA
62.5
°C/W
Peak pulse current
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air
conditions.
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FZT717
Typical characteristics
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FZT717
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown
voltage
BVCBO
Collector-emitter breakdown
voltage
Min.
Typ.
Max.
Unit
Conditions
-12
V
IC = 100µA
BVCEO
-12
V
IC = 10mA
Emitter-base breakdown
voltage
BVEBO
-5
V
IE = 100µA
Collector cut-off current
ICBO
-100
nA
VCB = -10V
Emitter cut-off current
IEBO
-100
nA
VEB = -4V
Collector-emitter saturation
voltage
VCE(sat)
-20
mV
IC =-0.1A, IB =-10mA (*)
-150
IC =-1A, IB =-10mA(*)
-320
IC =-3A, IB =-50mA(*)
Base-emitter saturation
voltage
VBE(sat)
-1050
mV
IC =-3A, IB =-50mA(*)
Base-emitter turn-on voltage
VBE(on)
-1000
mV
IC =-3A, VCE =-2V(*)
Static forward current transfer hFE
ratio
300
IC =-10mA, VCE =-2V(*)
300
IC =-100mA, VCE =-2V(*)
160
IC =-3A, VCE =-2V(*)
60
IC =-8A, VCE =-2V(*)
45
IC =-10A, VCE =-2V(*)
Transition frequency
fT
80
110
Output capacitance
COBO
21
Switching times
ton
toff
MHz
30
IC =-50mA, VCE =-10V
f = 100MHz
pF
VCB =-10V, f = 1MHz
70
ns
VCC =-6V, IC =-2A
130
ns
IB1 = IB2 =50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
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FZT717
Typical characteristics
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FZT717
Package outline - SOT223
DIM
Millimeters
Inches
DIM
Millimeters
Min
Max
Inches
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Fax: (49) 89 45 49 49 49
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USA
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Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
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reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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