ERICSSON PTB20009

e
PTB 20009
2.5 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20009 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 2.5 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
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•
•
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2.5 Watts, 935–960 MHz
Class AB Characteristics
50% Collector Efficiency at 2.5 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
6
5
4
VCC = 24 V
ICQ = 50 mA
f = 960 MHz
200
09
LOT
3
COD
E
2
1
0
0.00
0.15
0.30
0.45
0.60
0.75
Input Power (Watts)
Package 20206
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1.7
Adc
Total Device Dissipation at Tflange = 25°C
PD
Above 25°C derate by
13.5
Watts
0.077
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
13.0
°C/W
1
9/28/98
e
PTB 20009
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 50 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 50 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 250 A
hFE
20
50
120
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz)
Gpe
9
10
12
dB
Collector Efficiency
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz)
ηC
50
—
—
%
Ψ
—
—
30:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz,
—all phase angles at frequency of test)
Typical Performance
Gain & Efficiency vs. Frequency
Gain (dB)
12
68
Efficiency (%)
11
10
9
8
920
80
56
44
VCC = 24 V
Gain (dB)
ICQ = 50 mA
Pout = 2.5 W
930
32
940
950
960
Efficiency (%)
13
(as measured in a broadband circuit)
20
970
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98