STS3DPF30L ® DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L ■ ■ ■ V DSS R DS(on) ID 30 V < 0.16 Ω 3A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS BATTERY MANAGMENT IN NOMADIC EQUIPMENT ■ POWER MANAGMENT IN CELLULAR PHONES ■ DC-DC CONVERTER SO-8 INTERNAL SCHEMATIC DIAGRAM ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID IDM (•) P tot Parameter Value Unit Drain-source Voltage (V GS = 0) 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V 3 A 1.9 A 12 A 2 1.6 W W Gate-source Voltage o Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 100 o C Single Operation Drain Current (pulsed) o Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Single Operation (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 1/5 STS3DPF30L THERMAL DATA R thj-amb Tj Tstg o 78 62.5 150 -55 to 150 *Thermal Resistance Junction-ambient Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature o C/W C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Typ. Max. 30 V GS = 0 I DSS Min. Unit V T c = 125 o C V GS = ± 20 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) I D = 250 µA V GS = 10 V V GS = 4.5 V Min. 1 I D = 1.5 A I D = 1.5 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Typ. 1.6 2.5 V 0.145 0.18 0.16 0.19 Ω Ω 3 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. Typ. Max. Unit ID = 3 A 3 S V GS = 0 V 510 170 55 pF pF pF STS3DPF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Delay Time Rise Time V DD = 15 V I D = 1.5 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V I D = 3 A V GS = 4.5 V Min. Typ. Max. Unit 14.5 37 ns ns 5.5 1.7 1.8 nC nC nC SWITCHING OFF Symbol t d(of f) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. Typ. Max. 88 23 V DD = 15 V I D = 1.5 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) Unit ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD =3 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3 A di/dt = 100 A/µs V DD = 15 V T j = 150 o C (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. VGS = 0 T.B.D Max. Unit 3 12 A A 1.2 V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STS3DPF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 5.0 0.188 0.196 6.2 0.228 c1 45 (typ.) D 4.8 E 5.8 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 4/5 STS3DPF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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