A-POWER AP4532GM-HF

AP4532GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low On-resistance
30V
RDS(ON)
D1
D1
▼ Fast Switching Characteristic
50mΩ
ID
▼ RoHS Compliant & Halogen-Free
S2
G1
SO-8
G2
5A
P-CH BVDSS
S1
-30V
RDS(ON)
Description
70mΩ
ID
-4A
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D2
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Total Power Dissipation
-30
V
+20
V
5
-4
A
3
4
-3.2
A
20
-20
A
1
[email protected]=25℃
30
+20
Continuous Drain Current
Pulsed Drain Current
P-channel
3
Continuous Drain Current
IDM
Units
2
Linear Derating Factor
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201201302
AP4532GM-HF
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Min. Typ. Max. Units
30
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=4.2A
-
-
70
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
ID=5A
-
10.2
-
nC
o
IGSS
2
+100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
3.4
-
nC
VDS=10V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
15
-
ns
tf
Fall Time
RD=10Ω
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
240
-
pF
Coss
Output Capacitance
VDS=25V
-
145
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=1.2V
-
-
1.7
A
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
2
AP4532GM-HF
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
VGS=0V, ID=250uA
2
Static Drain-Source On-Resistance
Min. Typ. Max. Units
-30
-
-
V
-
-0.028
-
V/℃
VGS=-10V, ID=-4A
-
-
70
mΩ
VGS=-4.5V, ID=-3A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
o
IGSS
2
+100 nA
Qg
Total Gate Charge
ID=-4A
-
18.3
-
nC
Qgs
Gate-Source Charge
VDS=-10V
-
3.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
1.5
-
nC
VDS=-10V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
21
-
ns
tf
Fall Time
RD=10Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
760
-
pF
Coss
Output Capacitance
VDS=-25V
-
345
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=-1.2V
-
-
-1.7
A
Tj=25℃, IS=-1.7A, VGS=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4532GM-HF
N-Channel
50
70
T A =150 o C
o
T A =25 C
60
10V
50
8.0V
40
6.0V
40
8.0V
ID , Drain Current (A)
ID , Drain Current (A)
10V
30
30
6.0V
20
4.0V
20
4.0V
10
V GS =3.0V
10
V GS =3.0V
0
0
0
1
2
3
4
5
6
7
8
9
0
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
1.8
I D =5A
T A =25 ℃
I D =5A
V GS =10
V
1.6
Normalized RDS(ON)
75
RDS(ON) (mΩ )
1
65
55
1.4
1.2
1.0
45
0.8
35
0.6
2
4
6
8
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
AP4532GM-HF
N-Channel
3
6
5
2
PD (W)
ID , Drain Current (A)
4
3
1
2
1
0
0
25
50
75
100
125
0
150
50
100
150
T A , Ambient Temperature ( o C)
o
T A , Ambient Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
DC
T A =25 o C
Single Pulse
0.01
0.1
0.2
0.1
0.1
0.05
0.02
0.01
P DM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135 oC/W
0.001
1
10
V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
5
AP4532GM-HF
N-Channel
12
I D =5A
V DS =10V
10
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
Ciss
C (pF)
8
6
Coss
100
Crss
4
2
0
10
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100
2.5
10
2
VGS(th) (V)
IS(A)
T j =150 o C
T j =25 o C
1
1.5
1
0.1
0.5
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4532GM-HF
N-Channel
VDS
90%
RD
VDS
D
0.33x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
VGS
S
+
VGS
10V
-
td(on)
Fig 13. Switching Time Circuit
td(off)
tr
tf
Fig 14. Switching Time Waveform
VG
VDS
D
10V
0.33 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
7
AP4532GM-HF
P-Channel
20
20
T A =25 C
15
-ID , Drain Current (A)
15
-ID , Drain Current (A)
-10V
-8.0V
-6.0V
T A =150 o C
-10V
-8.0V
-6.0V
o
V GS =-4.0V
10
V GS =-4.0V
10
5
5
0
0
0
1
2
3
0
4
1
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
1.8
I D =-4.0A
I D =-4.0A
T A =25 ℃
80
Normalized RDS(ON)
70
RDS(ON) (mΩ)
V GS = -10V
1.6
60
50
1.4
1.2
1
0.8
40
0.6
30
2
4
6
8
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
AP4532GM-HF
P-Channel
3
5
2.5
2
3
PD (W)
-ID , Drain Current (A)
4
1.5
2
1
1
0.5
0
0
25
50
75
100
125
T A , Ambient Temperature (
o
0
150
50
100
150
T A , Ambient Temperature (
C)
Fig 5. Maximum Drain Current v.s.
o
C)
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
DC
T A =25 o C
Single Pluse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja+ Ta
Rthja=135 oC/W
0.01
0.001
0.1
1
10
-V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
9
AP4532GM-HF
P-Channel
12
I D =-4A
V DS =-10V
10
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
8
1000
C (pF)
Ciss
6
4
Coss
Crss
100
2
0
10
0
2
4
6
8
10
12
14
16
18
20
1
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100
2.5
10
2
-VGS(th) (V)
-IS(A)
T j =150 o C
T j =25 o C
1.5
1
1
0.1
0.5
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
10
AP4532GM-HF
P-Channel
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.33 x RATED VDS
G
10%
S
-10 V
VGS
VGS
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
-10V
0.33 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
11