CYSTEKEC MTN2302V3

CYStech Electronics Corp.
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 1/9
20V N-CHANNEL Enhancement Mode MOSFET
MTN2302V3
Features
• VDS=20V
RDS(ON)=85mΩ(max.)@VGS=4.5V, IDS=3.6A
RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A
• Simple drive requirement
• Small package outline
• Capable of 2.5V gate drive
• Pb-free package
Symbol
Outline
MTN2302V3
TSOT-23
D
G:Gate
S:Source
D:Drain
G
S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3)
Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power [email protected] TA=25℃
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS
VGS
IDM
PD
Limits
20
±8
3.2
2.6
10
1.38
Unit
V
V
A
A
A
W
Tj, Tstg
0.01
-55~+150
W/°C
°C
ID
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
MTN2302V3
CYStek Product Specification
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Symbol
Limit
Unit
Rth,ja
90
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
IS
ISM
Min.
Typ.
Max.
Unit
20
0.5
-
0.1
32
44
7
1.2
±100
1
10
85
115
-
V
V/°C
V
nA
μA
μA
-
145
100
50
5.2
37
15
5.7
4.4
0.6
1.9
-
-
-
1.2
1
10
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VDS=20V, VGS=0 (Tj=70°C)
ID=3.6A, VGS=4.5V
ID=3.1A, VGS=2.5V
VDS=5V, ID=3.6A
pF
VDS=10V, VGS=0, f=1MHz
ns
VDS=10V, ID=3.6A, VGS=5V
RG=6Ω, RD=2.8Ω
nC
VDS=10V, ID=3.6A, VGS=4.5V
V
VGS=0V, IS=1.0A
A
VD=VG=0V, VS=1.2V
mΩ
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN2302V3
MTN2302V3
Package
TSOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
02
CYStek Product Specification
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 3/9
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
Typical Output Characteristics
10
10
4.5V
3.5V
TA=25℃
3V
8
2.5V
VG=2V
ID, Drain Current-(A)
ID,Drain Current-(A)
8
6
4
VG=1.5V
2
TA=150℃
2.5
VG=2V
6
4
VG=1.5V
2
0
0
0
0
2
0.5
1
1.5
VDS,Drain-to-Source Voltage(V)
0.5
1
1.5
VDS, Drain-to-Source Voltage(V)
2
Normalized On-Resistance vs Junction Temperature
On-Resistance vs Gate Voltage
1.8
100
ID=3.1A
90
ID=3.6A
VG=4.5V
1.6
Normalized RDSON(mΩ)
80
RDSON(mΩ)
3.5V
3V
4.5V
70
TA=150℃
60
50
40
30
TA=25℃
1.4
1.2
1.0
0.8
20
0.6
10
2
3
4
5
6
VGS,Gate-to-Source Voltage (V)
7
-50
8
Forward Characteristics of Reverse Diode
1.0
150℃
VGS(th) (V)
IF, Forward Current(mA)
150
1.4
1000
25℃
100
MTN2302V3
50
100
Tj, Junction Temperature(℃)
Gate Threshold Voltage vs Junction Temperature
10000
10
100
0
0.6
0.2
200
300 400 500 600 700 800
VSD, Source to Drain Voltage(mV)
900
1000
-50
0
50
100
Tj, Junction Temperature(℃)
150
CYStek Product Specification
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Drain-Source On Resistance
On-Resistance vs Gate Voltage
100
90
RDSON - On - Resistance (mΩ)
100
ID=3.6A
RDSON(mΩ)
80
70
150℃
60
50
40
30
25℃
20
90
VGS=2.5V
80
150℃
70
60
50
40
25℃
30
20
10
10
2
3
4
5
6
7
8
10
100
1000
ID , Drain Current (mA)
VGS,Gate-to-Source Voltage (V)
Drain-Source On Resistance
Typical Capacitance Characteristics
1000
100
90
VGS=4.5V
80
Ciss
70
150℃
60
C(pF)
RDSON - On - Resistance (mΩ)
10000
50
100
Coss
40
Crss
30
25℃
20
f=1MHz
10
10
10
MTN2302V3
100
1000
ID , Drain Current (mA)
10000
0
5
10
15
20
VDS,Drain-to-Source Voltage(V)
25
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 5/9
Characteristic Curves(Cont.)
MTN2302V3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 6/9
Reel Dimension
MTN2302V3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTN2302V3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2302V3
CYStek Product Specification
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TSOT-23 Dimension
Device Code
TE
02
XX
Marking:
Date Code
3-Lead TSOT-23 Plastic
Surface Mounted Package
CYStek Package Code: V3
Style: Pin 1.Gate 2.Source 3.Drain
DIM
Inches
Min.
Max.
0.028
0.035
0.000
0.004
0.028
0.031
0.014
0.020
0.003
0.008
0.111
0.119
A
A1
A2
b
c
D
Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.350
0.500
0.080
0.020
2.820
3.020
DIM
E
E1
e
e1
L
θ
Inches
Min.
Max.
1.600
1.700
2.650
2.950
0.95(BSC)
1.90(BSC)
0.300
0.600
0°
8°
Millimeters
Min.
Max.
0.063
0.067
0.104
0.116
0.037(BSC)
0.075(BSC)
0.012
0.024
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2302V3
CYStek Product Specification