CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features • VDS=20V RDS(ON)=85mΩ(max.)@VGS=4.5V, IDS=3.6A RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A • Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free package Symbol Outline MTN2302V3 TSOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS IDM PD Limits 20 ±8 3.2 2.6 10 1.38 Unit V V A A A W Tj, Tstg 0.01 -55~+150 W/°C °C ID Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad MTN2302V3 CYStek Product Specification Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Limit Unit Rth,ja 90 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD IS ISM Min. Typ. Max. Unit 20 0.5 - 0.1 32 44 7 1.2 ±100 1 10 85 115 - V V/°C V nA μA μA - 145 100 50 5.2 37 15 5.7 4.4 0.6 1.9 - - - 1.2 1 10 Test Conditions S VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=VGS, ID=250μA VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=20V, VGS=0 (Tj=70°C) ID=3.6A, VGS=4.5V ID=3.1A, VGS=2.5V VDS=5V, ID=3.6A pF VDS=10V, VGS=0, f=1MHz ns VDS=10V, ID=3.6A, VGS=5V RG=6Ω, RD=2.8Ω nC VDS=10V, ID=3.6A, VGS=4.5V V VGS=0V, IS=1.0A A VD=VG=0V, VS=1.2V mΩ *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN2302V3 MTN2302V3 Package TSOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 02 CYStek Product Specification Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 3/9 CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics Typical Output Characteristics 10 10 4.5V 3.5V TA=25℃ 3V 8 2.5V VG=2V ID, Drain Current-(A) ID,Drain Current-(A) 8 6 4 VG=1.5V 2 TA=150℃ 2.5 VG=2V 6 4 VG=1.5V 2 0 0 0 0 2 0.5 1 1.5 VDS,Drain-to-Source Voltage(V) 0.5 1 1.5 VDS, Drain-to-Source Voltage(V) 2 Normalized On-Resistance vs Junction Temperature On-Resistance vs Gate Voltage 1.8 100 ID=3.1A 90 ID=3.6A VG=4.5V 1.6 Normalized RDSON(mΩ) 80 RDSON(mΩ) 3.5V 3V 4.5V 70 TA=150℃ 60 50 40 30 TA=25℃ 1.4 1.2 1.0 0.8 20 0.6 10 2 3 4 5 6 VGS,Gate-to-Source Voltage (V) 7 -50 8 Forward Characteristics of Reverse Diode 1.0 150℃ VGS(th) (V) IF, Forward Current(mA) 150 1.4 1000 25℃ 100 MTN2302V3 50 100 Tj, Junction Temperature(℃) Gate Threshold Voltage vs Junction Temperature 10000 10 100 0 0.6 0.2 200 300 400 500 600 700 800 VSD, Source to Drain Voltage(mV) 900 1000 -50 0 50 100 Tj, Junction Temperature(℃) 150 CYStek Product Specification Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Characteristic Curves(Cont.) Drain-Source On Resistance On-Resistance vs Gate Voltage 100 90 RDSON - On - Resistance (mΩ) 100 ID=3.6A RDSON(mΩ) 80 70 150℃ 60 50 40 30 25℃ 20 90 VGS=2.5V 80 150℃ 70 60 50 40 25℃ 30 20 10 10 2 3 4 5 6 7 8 10 100 1000 ID , Drain Current (mA) VGS,Gate-to-Source Voltage (V) Drain-Source On Resistance Typical Capacitance Characteristics 1000 100 90 VGS=4.5V 80 Ciss 70 150℃ 60 C(pF) RDSON - On - Resistance (mΩ) 10000 50 100 Coss 40 Crss 30 25℃ 20 f=1MHz 10 10 10 MTN2302V3 100 1000 ID , Drain Current (mA) 10000 0 5 10 15 20 VDS,Drain-to-Source Voltage(V) 25 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 5/9 Characteristic Curves(Cont.) MTN2302V3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 6/9 Reel Dimension MTN2302V3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 7/9 Carrier Tape Dimension MTN2302V3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2302V3 CYStek Product Specification Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TSOT-23 Dimension Device Code TE 02 XX Marking: Date Code 3-Lead TSOT-23 Plastic Surface Mounted Package CYStek Package Code: V3 Style: Pin 1.Gate 2.Source 3.Drain DIM Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.014 0.020 0.003 0.008 0.111 0.119 A A1 A2 b c D Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.350 0.500 0.080 0.020 2.820 3.020 DIM E E1 e e1 L θ Inches Min. Max. 1.600 1.700 2.650 2.950 0.95(BSC) 1.90(BSC) 0.300 0.600 0° 8° Millimeters Min. Max. 0.063 0.067 0.104 0.116 0.037(BSC) 0.075(BSC) 0.012 0.024 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2302V3 CYStek Product Specification