isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching regulators, and high voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO(SUS) VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE≤50Ω Collector-Emitter Voltage VALUE BUX16 250 BUX16A 325 BUX16B 375 BUX16C 425 BUX16 225 BUX16A 300 BUX16B 350 BUX16C 400 BUX16 200 BUX16A 250 BUX16B 300 BUX16C 350 UNIT V V V Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX16/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX16 VCEO(SUS) VCER(SUS) VEBO Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 200 BUX16A 250 IC= 200mA ; IB= 0 V BUX16B 300 BUX16C 350 BUX16 225 BUX16A 300 IC= 200mA ; RBE≤50Ω V BUX16B 350 BUX16C 400 Emitter-Base Voltage IE= 20mA ; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A 5.0 V Base-Emitter On Voltage IC= 2A; VCE= 10V 3.0 V VBE(on) BUX16 ICEV Collector Cutoff Current BUX16A BUX16B BUX16C 6 B VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ VCE= 325V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ VCE= 375V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ VCE= 425V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC= 150℃ 5 8 5 8 2 3 Emitter Cutoff Current 5.0 VEB= 5V; IC=0 mA BUX16B/C hFE-1 DC Current Gain hFE-2 DC Current Gain 2.0 IC= 0.4A ; VCE= 10V BUX16/A 15 130 15 IC= 2A ; VCE= 10V BUX16B/C 12 hFE-3 DC Current Gain IC= 4.5A ; VCE= 10V COB Output Capacitance IE=0 ; VCB= 10V; ftest= 1.0MHz Current-Gain—Bandwidth Product IC= 0.2A ;VCE= 10V fT mA 2 3 BUX16/A IEBO V isc Website：www.iscsemi.cn 2 5 150 5 pF MHz