CYSTEKEC BTD2098M3

CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTD2098M3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386M3
Symbol
Outline
BTD2098M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
40
20
6
5
8
0.6
1
2
150
-55~+150
V
V
V
A(DC)
A(Pulse)
Collector Current
IC
Power Dissipation
Pd
Junction Temperature
Storage Temperature
Tj
Tstg
*1
*2
*3
W
°C
°C
Note : *1 Single pulse , Pw=10ms
*2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm.
*3 When mounted on a 40*40*0.7mm ceramic board.
BTD2098M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
40
20
6
120
-
Typ.
0.25
150
30
Max.
0.5
0.5
1.0
820
50
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=50uA, IE=0
IC=1mA, IB=0
IE=50uA, IC=0
VCB=40V. IE=0
VEB=5V,IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
Range
Q
120~270
R
180~390
S
270~560
T
390~820
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Current Gain--- HFE
Saturation Voltage-(mV)
[email protected]=2V
100
[email protected]=20IB
100
10
1
1
10
100
1000
Collector Current---IC(mA)
BTD2098M3
10000
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
CYStek Product Specification
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
10000
VBE(SAT)@IC=20IB
Saturation Voltage-(mV)
Saturation Voltage-(mV)
VCE(SAT)@IB=40IB
100
10
1
1
10
100
1000
10000
Collector Current---IC(mA)
1000
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
Power Disspation---Pd(W)
2.5
2.0
Page1 Note *3
1.5
Page1 Note *2
1.0
0.5
0.0
0
BTD2098M3
50
100
Ambient Temperature---Ta(℃ )
150
CYStek Product Specification
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
H
C
AH
D
B
E
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
I
F
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2098M3
CYStek Product Specification