CYStech Electronics Corp. Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2098M3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386M3 Symbol Outline BTD2098M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO 40 20 6 5 8 0.6 1 2 150 -55~+150 V V V A(DC) A(Pulse) Collector Current IC Power Dissipation Pd Junction Temperature Storage Temperature Tj Tstg *1 *2 *3 W °C °C Note : *1 Single pulse , Pw=10ms *2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm. *3 When mounted on a 40*40*0.7mm ceramic board. BTD2098M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 40 20 6 120 - Typ. 0.25 150 30 Max. 0.5 0.5 1.0 820 50 Unit V V V uA uA V MHz pF Test Conditions IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=40V. IE=0 VEB=5V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range Q 120~270 R 180~390 S 270~560 T 390~820 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Current Gain--- HFE Saturation Voltage-(mV) HFE@VCE=2V 100 VCESAT@IC=20IB 100 10 1 1 10 100 1000 Collector Current---IC(mA) BTD2098M3 10000 0.1 1 10 100 1000 10000 Collector Current---IC(mA) CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 10000 VBE(SAT)@IC=20IB Saturation Voltage-(mV) Saturation Voltage-(mV) VCE(SAT)@IB=40IB 100 10 1 1 10 100 1000 10000 Collector Current---IC(mA) 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve Power Disspation---Pd(W) 2.5 2.0 Page1 Note *3 1.5 Page1 Note *2 1.0 0.5 0.0 0 BTD2098M3 50 100 Ambient Temperature---Ta(℃ ) 150 CYStek Product Specification Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C AH D B E 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 I F G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2098M3 CYStek Product Specification