CYStech Electronics Corp. Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AE3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA • Excellent current gain characteristics • Complementary to BTB1424AE3 Symbol Outline TO-220AB BTD2150AE3 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits Unit 80 50 6 3 7 (Note) 1 1.8 25 150 -55~+150 V V V A A W °C °C Note : Pulse test, pulse width≤380µs, duty cycle≤2%. BTD2150AE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE fT Cob ton tstg tf Min. 80 50 6 180 - Typ. 0.25 15 50 0.8 3 1.2 Max. 10 10 0.5 2 820 - Unit V V V µA µA V V MHz pF µs µs µs Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=80V, IE=0 VEB=6V, IC=0 IC=2A, IB=50mA IC=2A, IB=200mA VCE=4V, IC=500mA VCE=12V, IC=200mA, f =10MHz VCB=10V, f=1MHz VCC=20V, IC=1A, IB1=15mA, IB2=-30mA,RL=20Ω *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTD2150AE3 R 180~390 S 270~560 T 390~820 CYStek Product Specification Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 3/5 CYStech Electronics Corp. Characteristic Curves Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 700 500uA 120 Collector Current---IC(mA) Collector Current---IC(mA) 140 400uA 100 80 300uA 60 200uA 40 100uA 20 IB=0uA 0 0 1 2 3 4 500 2mA 400 1.5mA 300 1mA 200 500uA 100 IB=0uA 0 5 0 6 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Collector To Emitter Voltage---VCE(V) Grounded Emitter Output Characteristics Grounded Emitter Output Characteristics 3500 Collector Current---IC(mA) 2500 Collector Current---IC(mA) 2.5mA 600 10mA 2000 8mA 1500 6mA 1000 4mA 500 2mA 25mA 3000 20mA 2500 15mA 2000 10mA 1500 5mA 1000 500 IB=0mA IB=0mA 0 0 0 1 2 3 4 5 Collector To Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 6 Collector To Emitter Voltage---VCE(V) Current gain vs Collector current Saturation voltage vs Collector current 1000 1000 Saturation voltage---(mV) Current gain---HFE VCE(sat) VCE=5V 100 VCE=2V VCE=1V 10 100 IC=40IB 10 IC=10IB IC=20IB 1 1 10 100 1000 Collector current---IC(mA) BTD2150AE3 10000 1 10 100 1000 10000 Collector current---IC(mA) CYStek Product Specification CYStech Electronics Corp. Saturation votlage vs Collector current Power Derating Curve Power Dissipation---PD(W) 10000 Saturation voltage---(mV) VBE(sat)@IC=10IB 1000 100 1 10 100 1000 Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 4/5 10000 Collector current---IC(mA) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 30 25 20 15 10 5 0 0 BTD2150AE3 50 100 150 Case Temeprature---TC(℃) 200 CYStek Product Specification Spec. No. : C848E3 Issued Date : 2004.07.06 Revised Date : Page No. : 5/5 CYStech Electronics Corp. TO-220AB Dimension A Marking: B D E C D2150A H K M I 3 G N 2 1 4 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector O P 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2150AE3 CYStek Product Specification