A-POWER AP4521GEH

AP4521GEH
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
N-CH BVDSS
▼ Good Thermal Performance
▼ Fast Switching Performance
S1
▼ RoHS Compliant
G1
40V
RDS(ON)
36mΩ
ID
11.7A
P-CH BVDSS
S2
G2
TO-252-4L
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
-40V
RDS(ON)
72mΩ
ID
-8.7A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
Units
P-channel
40
-40
V
±16
±20
V
Continuous Drain Current
3
11.7
-8.7
A
Continuous Drain Current
3
7.4
-5.5
A
50
-40
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
9
W
Linear Derating Factor
0.07
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Unit
Max.
14
℃/W
Max.
110
℃/W
Parameter
Thermal Resistance Junction-case
3
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200628062-1/7
AP4521GEH
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
-
36
mΩ
VGS=4.5V, ID=6A
-
-
42
mΩ
0.8
-
2.5
V
VDS=10V, ID=8A
-
8
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=8A
-
7.4
12
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VDS=VGS, ID=250uA
o
IDSS
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
5.3
-
ns
tr
Rise Time
ID=8A
-
19.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=2.5Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
940
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
2/7
AP4521GEH
o
P-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-6A
-
-
72
mΩ
VGS=-4.5V, ID=-4A
-
-
92
mΩ
-0.8
-
-2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=-250uA
VDS=-10V, ID=-6A
-
6
-
S
o
VDS=-40V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-6A
-
7.3
12
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.6
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
6
-
ns
tr
Rise Time
ID=-6A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=1Ω,VGS=-10V
-
21
-
ns
tf
Fall Time
RD=3.33Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.6
8.4
Ω
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Min.
Typ.
IS=-6A, VGS=0V
Test Conditions
-
-
Max. Units
-1.3
V
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
3/7
AP4521GEH
N-Channel
50
40
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
40
10V
7.0V
5.0V
4.5V
o
T C = 150 C
30
ID , Drain Current (A)
T C = 25 o C
30
20
V G =3.0V
V G =3.0V
20
10
10
0
0
0
2
4
6
8
0
2
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.4
I D =6A
I D =8A
V G =10V
T C =25 o C
70
Normalized RDS(ON)
2.1
60
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
50
40
30
1.8
1.5
1.2
0.9
20
0.6
2
4
6
8
10
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60.0
10
8
T j =150 o C
T j =25 o C
IS(A)
6
4
RDS(ON) (mΩ)
50.0
V GS =4.5V
40.0
V GS =10V
30.0
2
20.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
10
20
30
40
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
4/7
AP4521GEH
N-Channel
f=1.0MHz
1000
C iss
I D =8A
V DS =30V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C oss
100
C rss
4
10
0
0
5
10
15
1
20
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
100us
1
1ms
10ms
100ms
1s
DC
T A =25 o C
Single Pulse
0.1
0.1
1
10
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
0.01
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
ID , Drain Current (A)
V DS =5V
VG
T j =25 o C
30
T j =150 o C
QG
4.5V
20
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4521GEH
P-Channel
40
30
30
-10V
-7.0V
-5.0V
-4.5V
25
-ID , Drain Current (A)
T C = 25 C
-ID , Drain Current (A)
o
T C = 150 C
-10V
-7.0V
-5.0V
-4.5V
o
20
V G = - 3.0V
10
20
15
V G = - 3.0V
10
5
0
0
0
2
4
6
0
8
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.0
I D =-4A
I D =-6A
V G =-10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
120
80
1.2
0.8
40
0.4
2
4
6
8
10
25
-V GS ,Gate-to-Source Voltage (V)
50
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
120.0
110.0
8
100.0
T j =25 o C
RDS(ON) (mΩ)
T j =150 o C
-IS(A)
6
4
90.0
V GS = -4.5V
80.0
70.0
V GS = -10V
60.0
2
50.0
0
40.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0
5
10
15
20
-I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
6/7
AP4521GEH
P-Channel
f=1.0MHz
1000
C iss
10
I D =-6A
V DS =-30V
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
0
10
0
5
10
15
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
-ID (A)
100us
1ms
1
10ms
100ms
1s
DC
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
T j =150 o C
QG
-4.5V
QGS
10
QGD
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7