A-POWER AP4511GH

AP4511GH
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
N-CH BVDSS
▼ Good Thermal Performance
▼ Fast Switching Performance
S1
G1
S2
G2
TO-252-4L
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
35V
RDS(ON)
30mΩ
ID
P-CH BVDSS
RDS(ON)
ID
15A
-35V
48mΩ
-12A
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
Units
P-channel
35
-35
V
±20
±20
V
Continuous Drain Current
3
15
-12
A
Continuous Drain Current
3
9
-7
A
50
-50
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
10.4
W
Linear Derating Factor
0.083
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Units
Max.
12
℃/W
Max.
110
℃/W
Parameter
Thermal Resistance Junction-case
3
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200222053
AP4511GH
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
-
30
mΩ
VGS=4.5V, ID=6A
-
-
40
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=8A
-
13
-
S
VDS=35V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=28V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=8A
-
11
18
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=18V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=18Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
AP4511GH
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-35
-
-
V
-
-0.03
-
V/℃
VGS=-10V, ID=-6A
-
-
48
mΩ
VGS=-4.5V, ID=-4A
-
-
70
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-6A
-
10
-
S
VDS=-35V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-28V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Max. Units
Qg
Total Gate Charge
ID=-6A
-
10
19
nC
Qgs
Gate-Source Charge
VDS=-28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-18V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=18Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5
7.5
Ω
Min.
Typ.
IS=-6A, VGS=0V
-
-
-1.2
V
IS=-6A, VGS=0V
-
20
-
ns
dI/dt=-100A/µs
-
12
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
Max. Units
AP4511GH
N-Channel
50
50
T C = 25 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
30
4.5V
20
V G =3.0V
10
30
5.0V
20
4.5V
V G =3.0V
10
0
0
0
1
2
3
4
0
5
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
45
ID=6A
T C =25 o C
ID=8A
V G =10V
1.4
Normalized RDS(ON)
40
RDS(ON) (mΩ )
10V
7.0V
T C = 150 o C
10V
7.0V
5.0V
35
30
25
1.2
1.0
0.8
20
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
Normalized VGS(th) (V)
6
4
o
o
IS(A)
T j =150 C
T j =25 C
2
1.1
0.8
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4511GH
N-Channel
f=1.0MHz
1000
14
C iss
ID=8A
V DS = 28V
VGS , Gate to Source Voltage (V)
12
10
C (pF)
8
6
C oss
C rss
100
4
2
10
0
0
5
10
15
20
1
25
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
ID (A)
10
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
V DS =5V
ID , Drain Current (A)
30
T j =25 o C
QG
T j =150 o C
4.5V
20
QGS
QGD
10
Charge
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
AP4511GH
P-Channel
50
50
-10V
-7.0V
o
T C = 25 C
40
-ID , Drain Current (A)
-ID , Drain Current (A)
40
-5.0V
30
-4.5V
20
V G = - 3.0V
10
-5.0V
30
-4.5V
20
V G = - 3.0V
10
0
0
0
1
2
3
4
5
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
90
ID=-4A
I D = -6 A
V G = - 10V
1.4
Normalized R DS(ON)
T C =25 o C
RDS(ON) (mΩ )
-10V
-7.0V
o
T C = 150 C
70
50
1.2
1.0
0.8
30
0.6
2
4
6
8
-50
10
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
6
Normalized -VGS(th) (V)
5
-IS(A)
4
T j =150 o C
T j =25 o C
3
2
1.2
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4511GH
P-Channel
f=1.0MHz
1000
I D = -6 A
V DS = - 28V
C iss
12
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
4
C oss
C rss
0
100
0
5
10
15
20
25
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
-ID (A)
10
1ms
1
T C =25 o C
Single Pulse
10ms
100ms
DC
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
20
QG
T j =150 o C
-4.5V
QGS
QGD
10
Charge
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q