A-POWER AP6982GM

AP6982GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Low On-resistance
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
CH-1
D2
D2
D2
D1 D2
D1 D1
D1
▼ Fast Switching Characteristic
▼ Surface Mount Package
G2
G2
SO-8
SO-8
S2
G1 S2
S1 G1
S1
CH-2
Description
BVDSS
30V
RDS(ON)
18mΩ
ID
8.5A
BVDSS
30V
RDS(ON)
26mΩ
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
7.3A
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
CH-1
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
Continuous Drain Current
3
[email protected]=70℃
Continuous Drain Current
3
1
Units
CH2
30
30
V
±25
±25
V
8.5
7.3
A
6.8
5.8
A
30
30
A
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201220042
AP6982GM
o
CH-1 Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
15
18
mΩ
VGS=4.5V, ID=6A
-
23
30
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=8A
-
12
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Min.
ID=8A
-
14
22
nC
Gate-Source Charge
VDS=24V
-
4
-
nC
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
Qg
Total Gate Charge
Qgs
Qgd
2
td(on)
Turn-on Delay Time
VDS=15V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
1050 1680
pF
Coss
Output Capacitance
VDS=25V
-
240
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
2.4
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
AP6982GM
CH-2 Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=7A
-
22
26
mΩ
VGS=4.5V, ID=5A
-
36
45
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Max. Units
VDS=10V, ID=7A
-
10
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=7A
-
9
15
nC
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=15V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
640
1030
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Gate Resistance
f=1.0MHz
-
1.7
2.5
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
IS=7A, VGS=0V
-
18
-
ns
dI/dt=100A/µs
-
8
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
AP6982GM
Channel-1
50
50
10V
7.0V
5.0V
ID , Drain Current (A)
40
40
4.5V
30
20
10
5.0V
4.5V
30
20
V G =3.0V
10
V G =3.0V
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
28
ID=6A
o
T A =25 C
ID=8A
V G =10V
1.4
Normalized R DS(ON)
24
RDS(ON) (mΩ )
10V
7.0V
o
T A = 150 C
ID , Drain Current (A)
T A = 25 o C
20
1.2
1.0
16
0.8
0.6
12
2
4
6
8
-50
10
V GS ,Gate-to-Source Voltage (V)
2
6
1.5
Normalized VGS(th) (V)
IS(A)
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
T j =150 o C
50
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
4
0
T j =25 o C
1
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP6982GM
Channel-1
f=1.0MHz
10000
14
ID=8A
V DS =16V
V DS =20V
V DS =24V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
1000
4
C oss
2
C rss
0
100
0
5
10
15
20
25
30
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
1ms
1
10ms
100ms
1s
10s
DC
T A =25 o C
Single Pulse
0.1
0.01
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
V DS =5V
T j =25 o C
ID , Drain Current (A)
30
T j =150 o C
QG
4.5V
QGS
20
QGD
10
Charge
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
AP6982GM
Channel-2
50
50
o
40
40
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
T A = 150 o C
10V
7.0V
T A =25 C
5.0V
30
4.5V
20
10
5.0V
30
4.5V
20
10
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.6
ID=5A
T A =25 o C
I D =7A
V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
40
30
1.2
1.0
0.8
0.6
20
2
4
6
8
10
-50
0
50
100
150
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
8
T j =150 o C
Normalized VGS(th) (V)
IS(A)
6
T j =25 o C
4
2
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j ,Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP6982GM
Channel-2
f=1.0MHz
1000
16
C iss
12
V DS =16V
V DS =20V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
ID=7A
8
4
C oss
C rss
100
0
0
5
10
15
1
20
5
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
100us
10
1ms
ID (A)
9
1
10ms
100ms
1s
10s
DC
o
0.1
T A =25 C
Single Pulse
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
30
T j =150 o C
QG
4.5V
QGS
20
QGD
10
Charge
0
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q