A-POWER AP4521GEM

AP4521GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Fast Switching Performance
N-CH BVDSS
D2
RDS(ON)
D1
D1
▼ RoHS Compliant
40V
36mΩ
ID
G2
S2
G1
SO-8
P-CH BVDSS
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
5.8A
-40V
RDS(ON)
72mΩ
ID
-4.1A
D1
D2
G1
G2
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
40
-40
V
±16
±20
V
Continuous Drain Current
3
5.8
-4.2
A
Continuous Drain Current
3
4.7
-3.3
A
20
-20
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
Linear Derating Factor
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200629062-1/7
AP4521GEM
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=5A
-
-
36
mΩ
VGS=4.5V, ID=3A
-
-
42
mΩ
0.8
-
2.5
V
VDS=5V, ID=5A
-
5
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=5A
-
7.5
12
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IGSS
2
VDS=VGS, ID=250uA
o
IDSS
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.3
-
nC
2
td(on)
Turn-on Delay Time
VDS=20V
-
4.5
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=20Ω
-
4.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
940
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=1.5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
2/7
AP4521GEM
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-4A
-
-
72
mΩ
VGS=-4.5V, ID=-2A
-
-
92
mΩ
-0.8
-
-2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=-250uA
Max. Units
VDS=-5V, ID=-4A
-
4
-
S
o
VDS=-40V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-32V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-4A
-
7
12
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-30V
-
1.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.5
-
nC
VDS=-20V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=20Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.6
8.4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.5A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
3/7
AP4521GEM
N-Channel
20
20
T A = 150 C
15
ID , Drain Current (A)
ID , Drain Current (A)
15
10
5
0
10
5
0
0
1
2
3
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.0
I D =3A
I D =5A
V G =10V
Normalized RDS(ON)
T A =25 o C
60
RDS(ON0 (mΩ)
10V
7.0V
5.0V
4.5V
V G =3.0V
o
10V
7.0V
5.0V
4.5V
V G =3.0V
o
T A =25 C
40
20
1.6
1.2
0.8
2
4
6
8
10
25
50
75
100
125
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
60.0
10
8
T j =25 o C
RDS(ON) (mΩ)
T j =150 o C
IS(A)
6
4
40.0
V GS =4.5V
V GS =10V
2
0
20.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
5
10
15
20
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
4/7
AP4521GEM
N-Channel
f=1.0MHz
12
1000
VGS , Gate to Source Voltage (V)
C iss
ID=5A
V DS = 30 V
C (pF)
8
100
C oss
C rss
4
10
0
0
3
6
9
12
15
1
18
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
1ms
1
10ms
100ms
T A =25 o C
Single Pulse
0.1
1s
10s
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =150 o C
VG
QG
4.5V
QGS
10
QGD
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4521GEM
P-Channel
20
20
T A =25 o C
- 10V
- 7.0V
- 5.0V
- 4.5V
15
-ID , Drain Current (A)
-ID , Drain Current (A)
15
V G = - 3.0V
10
5
V G = - 3.0V
10
5
0
0
0
2
4
6
0
8
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
160
I D = -4 A
V G = - 10V
I D = -2 A
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
- 10V
- 7.0V
- 5.0V
- 4.5V
o
T A = 150 C
120
80
1.4
1.0
0.6
40
2
4
6
8
25
10
-V GS , Gate-to-Source Voltage (V)
50
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100.0
10
8
V GS = -4.5V
RDS(ON) (mΩ)
-IS(A)
80.0
6
T j =150 o C
T j =25 o C
4
V GS = -10V
60.0
2
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40.0
0
5
10
15
20
-I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
6/7
AP4521GEM
P-Channel
f=1.0MHz
12
1000
-VGS , Gate to Source Voltage (V)
10
C iss
8
C (pF)
I D =-4A
V DS =-30V
6
100
C oss
C rss
4
2
10
0
0.0
4.0
8.0
12.0
1
16.0
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
1ms
10ms
1
100ms
0.1
1s
10s
DC
o
T A =25 C
Single Pulse
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS =-5V
VG
-ID , Drain Current (A)
15
T j =25 o C
QG
T j =150 o C
-4.5V
QGS
10
QGD
5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7