A-POWER AP96T07AGP-HF

AP96T07AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
75V
RDS(ON)
4.25mΩ
ID
G
170A
S
Description
AP96T07A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-industrial
through hole applications. The low thermal resistance and low
package cost contribute to the worldwide popular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Continuous Drain Current (Chip)
170
A
[email protected]=25℃
Continuous Drain Current, VGS @ 10V3
120
A
[email protected]=100℃
Continuous Drain Current, VGS @ 10V
110
A
440
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
250
W
[email protected]=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.5
℃/W
62
℃/W
1
201303273
AP96T07AGP-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
75
-
-
V
VGS=10V, ID=40A
-
-
4.25
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
100
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
170
272
nC
Qgs
Gate-Source Charge
VDS=60V
-
43
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
58
-
nC
td(on)
Turn-on Delay Time
VDS=40V
-
40
-
ns
tr
Rise Time
ID=40A
-
105
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
80
-
ns
tf
Fall Time
VGS=10V
-
70
-
ns
Ciss
Input Capacitance
VGS=0V
-
Coss
Output Capacitance
VDS=25V
-
890
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
340
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
12280 19650
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=40A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
145
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP96T07AGP-HF
300
200
160
ID , Drain Current (A)
ID , Drain Current (A)
250
10V
9.0V
8.0V
7.0V
V GS =6.0V
T C = 150 o C
10V
9.0V
8.0V
7.0V
o
T C = 25 C
200
V GS =6.0V
150
100
120
80
40
50
0
0
0
4
8
12
16
20
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
10
I D =40A
V G =10V
I D =40A
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
8
6
1.6
1.2
4
0.8
0.4
2
4
5
6
7
8
9
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
I D =250uA
1.2
T j =150 o C
Normalized VGS(th)
IS(A)
30
T j =25 o C
20
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP96T07AGP-HF
f=1.0MHz
16000
I D = 40A
V DS = 60V
10
C iss
12000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
8000
4
4000
2
0
0
0
40
80
120
160
200
1
240
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
C oss
C rss
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
ID (A)
100
1ms
10ms
10
100ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
VG
ID , Drain Current (A)
160
QG
10V
Limited by package
120
QGS
QGD
80
40
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4